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SIRC04DP-T1-GE3

SIRC04DP-T1-GE3
Mfr. #:
SIRC04DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIRC04DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRC04DP-T1-GE3 DatasheetSIRC04DP-T1-GE3 Datasheet (P4-P6)SIRC04DP-T1-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIRC04DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
3.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
- 16 V, 20 V
Qg - Carga de puerta:
16.6 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
50 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
140 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
55 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
30 ns
Tags
SIRC0, SIRC, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***i-Key
MOSFET N-CH 30V 60A POWERPAKSO-8
***ark
Mosfet, N-Ch, 30V, 60A, 150Deg C, 50W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.00205Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 60A, 150DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00205ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:50W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 30V, 60A, 150°C, 50W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.00205ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.1V; Dissipazione di Potenza Pd:50W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descripción Valores Precio
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.7316
  • 3000:$0.7598
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.8405
  • 500:$1.0144
  • 100:$1.2347
  • 10:$1.5360
  • 1:$1.7100
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.8405
  • 500:$1.0144
  • 100:$1.2347
  • 10:$1.5360
  • 1:$1.7100
SIRC04DP-T1-GE3
DISTI # SIRC04DP-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRC04DP-T1-GE3)
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.6869
  • 30000:$0.7059
  • 18000:$0.7259
  • 12000:$0.7569
  • 6000:$0.7799
SIRC04DP-T1-GE3
DISTI # 81AC2785		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00205ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes6050
  • 500:$0.9480
  • 250:$1.0100
  • 100:$1.0800
  • 50:$1.1900
  • 25:$1.2900
  • 10:$1.3900
  • 1:$1.6800
SIRC04DP-T1-GE3
DISTI # 59AC7426		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET W/SCHOTT0
  • 10000:$0.6700
  • 6000:$0.6970
  • 4000:$0.7240
  • 2000:$0.8040
  • 1000:$0.8470
  • 1:$0.9010
SIRC04DP-T1-GE3
DISTI # 78-SIRC04DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		5996
  • 1:$1.6600
  • 10:$1.3800
  • 100:$1.0700
  • 500:$0.9390
  • 1000:$0.7780
  • 3000:$0.7240
  • 6000:$0.6970
SIRC04DP-T1-GE3
DISTI # 2932950		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W6050
  • 500:£0.6800
  • 250:£0.7280
  • 100:£0.7750
  • 10:£1.0500
  • 1:£1.3700
SIRC04DP-T1-GE3
DISTI # 2932950		Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, 150DEG C, 50W
RoHS: Compliant		6050
  • 1000:$1.2200
  • 500:$1.2800
  • 250:$1.5100
  • 100:$1.8300
  • 10:$2.3300
  • 1:$2.8200
Imagen Parte # Descripción
SIRC04DP-T1-GE3

Mfr.#: SIRC04DP-T1-GE3

OMO.#: OMO-SIRC04DP-T1-GE3

 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRC04DP

Mfr.#: SIRC04DP

OMO.#: OMO-SIRC04DP-1190

 Nuevo y original
SIRC04DP-T1-GE3

Mfr.#: SIRC04DP-T1-GE3

OMO.#: OMO-SIRC04DP-T1-GE3-VISHAY

 MOSFET N-CH 30V 60A POWERPAKSO-8
Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de SIRC04DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,66 US$
1,66 US$
10
1,38 US$
13,80 US$
100
1,07 US$
107,00 US$
500
0,94 US$
469,50 US$
1000
0,78 US$
778,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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