SIHB30N60E-E3

SIHB30N60E-E3
Mfr. #:
SIHB30N60E-E3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET N-Channel 600V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB30N60E-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SIHB30N60E, SIHB30, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 29A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 29A D2PAK
***ark
N-CHANNEL 600V
Parte # Mfg. Descripción Valores Precio
SIHB30N60E-E3
DISTI # SIHB30N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 29A D2PAK
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIHB30N60E-E3
    DISTI # SIHB30N60E-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin D2PAK - Tape and Reel (Alt: SIHB30N60E-E3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
      SIHB30N60E-E3
      DISTI # 781-SIHB30N60E-E3
      Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
      RoHS: Compliant
      0
        SIHB30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
        RoHS: Compliant
        Americas -
          Imagen Parte # Descripción
          SIHB30N60AEL-GE3

          Mfr.#: SIHB30N60AEL-GE3

          OMO.#: OMO-SIHB30N60AEL-GE3

          MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
          SIHB30N60E-E3

          Mfr.#: SIHB30N60E-E3

          OMO.#: OMO-SIHB30N60E-E3

          MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
          SIHB30N60E-E3

          Mfr.#: SIHB30N60E-E3

          OMO.#: OMO-SIHB30N60E-E3-VISHAY

          RF Bipolar Transistors MOSFET N-Channel 600V
          SIHB30N60AEL-GE3

          Mfr.#: SIHB30N60AEL-GE3

          OMO.#: OMO-SIHB30N60AEL-GE3-VISHAY

          MOSFET N-CHAN 600V D2PAK
          SIHB30N60E-GE3-CUT TAPE

          Mfr.#: SIHB30N60E-GE3-CUT TAPE

          OMO.#: OMO-SIHB30N60E-GE3-CUT-TAPE-1190

          Nuevo y original
          SIHB30N60E

          Mfr.#: SIHB30N60E

          OMO.#: OMO-SIHB30N60E-1190

          Nuevo y original
          SIHB30N60E-GE3

          Mfr.#: SIHB30N60E-GE3

          OMO.#: OMO-SIHB30N60E-GE3-VISHAY

          MOSFET N-CH 600V 29A D2PAK
          SIHB30N60EGE3

          Mfr.#: SIHB30N60EGE3

          OMO.#: OMO-SIHB30N60EGE3-1190

          Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de SIHB30N60E-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
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          Ext. Precio
          1
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          10
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          100
          0,00 US$
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          500
          0,00 US$
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          1000
          0,00 US$
          0,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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