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FDP79N15

FDP79N15
Mfr. #:
FDP79N15
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 150V NCH MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP79N15 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDP79N15 DatasheetFDP79N15 Datasheet (P4-P6)FDP79N15 Datasheet (P7-P9)FDP79N15 Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
79 A
Rds On - Resistencia de la fuente de drenaje:
30 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
463 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
46 S
Otoño:
38 ns
Tipo de producto:
MOSFET
Hora de levantarse:
200 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
55 ns
Tiempo típico de retardo de encendido:
20 ns
Unidad de peso:
0.090478 oz
Tags
FDP7, FDP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 150V 79A TO-220
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:79A; On Resistance, Rds(on):0.03ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:79A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Capacitance, Ciss Typ:2620pF; Case Style, Alternate:SOT-78B; Current, Idm Pulse:316A; Pin Configuration:G(1),D(2)S(3); Pins, No. of:3; Power, Pd:463W; Resistance, Rds on Max:0.03ohm; Resistance, Rds on Typ.:0.025ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.27°C/W; Voltage, Rds Measurement:10V; Voltage, Vds Max:150V; Voltage, Vgs th Max:5V; Voltage, Vgs th Min:3V
Parte # Mfg. Descripción Valores Precio
FDP79N15
DISTI # FDP79N15-ND		ON SemiconductorMOSFET N-CH 150V 79A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FDP79N15
    DISTI # 512-FDP79N15    		ON SemiconductorMOSFET 150V NCH MOSFET
    RoHS: Compliant    		0
      FDP79N15Fairchild Semiconductor CorporationPower Field-Effect Transistor, 79A I(D), 150V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		6112
      • 1000:$3.2600
      • 500:$3.4400
      • 100:$3.5800
      • 25:$3.7300
      • 1:$4.0200
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      		 MOSFET N-CH 150V 79A TO-220
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      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de FDP79N15 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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