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IPB60R060C7ATMA1

IPB60R060C7ATMA1
Mfr. #:
IPB60R060C7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB60R060C7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPB60R060C7ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Serie:
CoolMOS C7
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
IPB60R060C7 SP001385008
Unidad de peso:
0.077603 oz
Tags
IPB60R0, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 600V 35A 3-Pin TO-263 T/R
***ark
Mosfet, N-Ch, 600V, 35A, 162W, To-263; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.052Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPB60R060C7ATMA1
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPB60R060C7ATMA1
DISTI # IPB60R060C7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 35A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		760In Stock
  • 500:$5.2481
  • 100:$6.2638
  • 10:$7.6180
  • 1:$8.4600
IPB60R060C7ATMA1
DISTI # IPB60R060C7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 35A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		760In Stock
  • 500:$5.2481
  • 100:$6.2638
  • 10:$7.6180
  • 1:$8.4600
IPB60R060C7ATMA1
DISTI # IPB60R060C7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 35A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$4.4378
IPB60R060C7ATMA1
DISTI # IPB60R060C7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW - Tape and Reel (Alt: IPB60R060C7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$4.2900
  • 2000:$4.0900
  • 4000:$3.9900
  • 6000:$3.7900
  • 10000:$3.6900
IPB60R060C7ATMA1
DISTI # SP001385008		Infineon Technologies AGMOSFET HIGH POWER_NEW (Alt: SP001385008)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€4.0900
  • 2000:€3.8900
  • 4000:€3.7900
  • 6000:€3.4900
  • 10000:€3.2900
IPB60R060C7ATMA1
DISTI # IPB60R060C7		Infineon Technologies AGMOSFET HIGH POWER_NEW (Alt: IPB60R060C7)
RoHS: Compliant
Min Qty: 1000		Asia - 0
  • 1000:$4.2691
  • 2000:$4.1506
  • 3000:$4.0384
  • 5000:$3.9321
  • 10000:$3.8810
  • 25000:$3.8313
  • 50000:$3.7828
IPB60R060C7ATMA1
DISTI # 93AC7104		Infineon Technologies AGMOSFET, N-CH, 600V, 35A, 162W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.052ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes1000
  • 500:$3.7000
  • 250:$4.0600
  • 100:$4.2600
  • 50:$4.5800
  • 25:$4.9000
  • 10:$5.1400
  • 1:$5.6800
IPB60R060C7ATMA1
DISTI # 726-IPB60R060C7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		813
  • 1:$7.1000
  • 10:$6.4200
  • 25:$6.1200
  • 100:$5.3200
  • 250:$5.0800
  • 500:$4.6300
  • 1000:$4.0300
  • 2000:$3.8800
IPB60R060C7ATMA1
DISTI # 2986356		Infineon Technologies AGMOSFET, N-CH, 600V, 35A, 162W, TO-263
RoHS: Compliant		1000
  • 100:£4.2400
  • 50:£4.5800
  • 10:£4.9200
  • 5:£5.6600
  • 1:£6.1600
IPB60R060C7ATMA1
DISTI # 2986356		Infineon Technologies AGMOSFET, N-CH, 600V, 35A, 162W, TO-263
RoHS: Compliant		1000
  • 250:$5.8800
  • 100:$7.6900
  • 50:$8.2900
  • 10:$8.8400
  • 5:$10.0300
  • 1:$10.9700
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Disponibilidad
Valores:
807
En orden:
2790
Ingrese la cantidad:
El precio actual de IPB60R060C7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
7,10 US$
7,10 US$
10
6,42 US$
64,20 US$
25
6,12 US$
153,00 US$
100
5,32 US$
532,00 US$
250
5,08 US$
1 270,00 US$
500
4,63 US$
2 315,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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