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IPL65R230C7

IPL65R230C7
Mfr. #:
IPL65R230C7
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPL65R230C7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPL65R230C7 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
VSON-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
10 A
Rds On - Resistencia de la fuente de drenaje:
230 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
20 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
67 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
8 mm
Serie:
CoolMOS C7
Tipo de transistor:
1 N-Channel
Ancho:
8 mm
Marca:
Infineon Technologies
Otoño:
22 ns
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
71 ns
Tiempo típico de retardo de encendido:
8 ns
Parte # Alias:
IPL65R230C7AUMA1 SP001032728
Tags
IPL65R23, IPL65R2, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPL65R230C7AUMA1
DISTI # V72:2272_06378016		Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3041
  • 1000:$1.3157
  • 500:$1.5742
  • 250:$1.8908
  • 100:$2.0108
  • 25:$2.4538
  • 10:$2.4820
  • 1:$2.7368
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1652In Stock
  • 1000:$1.4450
  • 500:$1.7440
  • 100:$2.2423
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1652In Stock
  • 1000:$1.4450
  • 500:$1.7440
  • 100:$2.2423
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.3062
IPL65R230C7AUMA1
DISTI # 31601455		Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3041
  • 1000:$1.3157
  • 500:$1.5742
  • 250:$1.8908
  • 100:$2.0108
  • 25:$2.4538
  • 10:$2.4820
  • 6:$2.7368
IPL65R230C7AUMA1
DISTI # 27158548		Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3872
IPL65R230C7
DISTI # 31073579		Infineon Technologies AG0400
  • 200:$1.3005
  • 100:$1.4790
  • 50:$1.7468
  • 10:$2.1420
  • 7:$4.1947
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1		Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 10A 4-Pin VSON T/R - Tape and Reel (Alt: IPL65R230C7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.1900
  • 6000:$1.1900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
IPL65R230C7AUMA1
DISTI # 13AC9066		Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.204ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2179
  • 1000:$1.4500
  • 500:$1.7400
  • 250:$1.9900
  • 100:$2.2400
  • 50:$2.4200
  • 25:$2.6100
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1Infineon Technologies AGPower Field-Effect Transistor, 10A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		9000
  • 1000:$1.2100
  • 500:$1.2700
  • 100:$1.3300
  • 25:$1.3800
  • 1:$1.4900
IPL65R230C7
DISTI # 726-IPL65R230C7		Infineon Technologies AGMOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
RoHS: Compliant		1059
  • 1:$2.5200
  • 10:$2.1400
  • 100:$1.7100
  • 500:$1.5000
  • 1000:$1.2400
IPL65R230C7AUMA1
DISTI # 2726064		Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5
RoHS: Compliant		2179
  • 500:£1.3900
  • 250:£1.5900
  • 100:£1.7800
  • 10:£2.2200
  • 1:£2.7700
IPL65R230C7
DISTI # C1S322000376805		Infineon Technologies AGMOSFETs
RoHS: Compliant		400
  • 200:$1.0200
  • 100:$1.1600
  • 50:$1.3700
  • 10:$1.6800
  • 1:$3.2900
IPL65R230C7AUMA1
DISTI # 2726064		Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5
RoHS: Compliant		2179
  • 1000:$2.3100
  • 500:$2.7800
  • 100:$3.5800
  • 10:$4.4500
  • 1:$4.9300
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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de IPL65R230C7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,58 US$
2,58 US$
10
2,19 US$
21,90 US$
100
1,76 US$
176,00 US$
500
1,54 US$
770,00 US$
1000
1,27 US$
1 270,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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