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APT15GT120BRG

APT15GT120BRG
Mfr. #:
APT15GT120BRG
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT15GT120BRG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT15GT120BRG DatasheetAPT15GT120BRG Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Tags
APT15GT, APT15G, APT15, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.2KV 36A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***p One Stop Global
Trans IGBT Chip N-CH 1200V 30A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH40KDPBF Series 1200 V 15 A N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.74 V Current release time: 220 ns Power dissipation: 160 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 30A; Transistor Type; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:3.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Fall Time Max:330ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:31ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ure Electronics
IRG4PH40K Series 1200 V 15 A Through Hole UltraFast IGBT - TO-247AC
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.74V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40KPBF; Fall Time Max:230ns; Fall Time tf:230ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:22ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 30A 294000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB15N120: 1200 V 30 A 294 W Through Hole Field Stop II IGBT - TO-247-3
***ark
Transistor, Igbt, 1.2Kv, 30A, To-247; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:294W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ure Electronics
FGA20N120FTD Series 1200 V 40 A Field Stop Trench IGBT-TO-3PN
***ow.cn
Trans IGBT Chip N-CH 1200V 40A 298000mW 3-Pin(3+Tab) TO-3P Tube
***emi
IGBT, 1200V, 20A, Field Stop Trench
***ark
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
***rchild Semiconductor
Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT 1200V 15A FS2-RC Induction Heating
***ark
Igbt, Single, 1.2Kv, 30A, To-247 Rohs Compliant: Yes
***i-Key
IGBT TRENCH/FS 1200V 30A TO247
*** Stop Electro
Insulated Gate Bipolar Transistor
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pin
Parte # Mfg. Descripción Valores Precio
APT15GT120BRG
DISTI # APT15GT120BRG-ND		Microsemi CorporationIGBT 1200V 36A 250W TO247
RoHS: Compliant
Min Qty: 124
Container: Tube		Temporarily Out of Stock
  • 124:$4.4569
APT15GT120BRG
DISTI # APT15GT120BRG		Microchip Technology IncTrans IGBT Chip N-CH 1.2KV 36A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT15GT120BRG)
RoHS: Compliant
Min Qty: 124
Container: Tube		Americas - 0
  • 1240:$2.4900
  • 372:$2.5900
  • 620:$2.5900
  • 248:$2.6900
  • 124:$2.7900
APT15GT120BRG
DISTI # 494-APT15GT120BRG		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
RoHS: Compliant		19
  • 1:$5.6800
  • 10:$4.5600
  • 25:$4.4800
  • 100:$4.1600
  • 250:$3.7500
  • 500:$3.3400
  • 1000:$2.8300
  • 2500:$2.6100
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Disponibilidad
Valores:
19
En orden:
2002
Ingrese la cantidad:
El precio actual de APT15GT120BRG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,68 US$
5,68 US$
10
4,56 US$
45,60 US$
25
4,48 US$
112,00 US$
100
4,16 US$
416,00 US$
250
3,75 US$
937,50 US$
500
3,34 US$
1 670,00 US$
1000
2,83 US$
2 830,00 US$
2500
2,61 US$
6 525,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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