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SPP20N60C3XKSA1

SPP20N60C3XKSA1
Mfr. #:
SPP20N60C3XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 600V 20.7A TO-220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPP20N60C3XKSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
SPP20N60
embalaje
Tubo
Alias ​​de parte
SP000681058 SPP20N60C3 SPP20N60C3XK
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Nombre comercial
CoolMOS
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
208 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
4.5 ns
Hora de levantarse
5 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
20.7 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
190 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
67 ns
Tiempo de retardo de encendido típico
10 ns
Qg-Gate-Charge
87 nC
Transconductancia directa-Mín.
17.5 S
Tags
SPP20N60C3, SPP20N60C, SPP20N60, SPP20N6, SPP20N, SPP20, SPP2, SPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 190 mOhm 114 nC CoolMOS™ Power Mosfet - TO-220-3
***p One Stop Global
Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Parte # Mfg. Descripción Valores Precio
SPP20N60C3XKSA1
DISTI # SPP20N60C3XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 20.7A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$2.7381
  • 500:$3.2466
  • 100:$4.0094
  • 50:$4.4006
  • 1:$5.4800
SPP20N60C3XK
DISTI # SPP20N60C3XKSA1		Infineon Technologies AGTrans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP20N60C3XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$2.4900
  • 502:$2.3900
  • 1002:$2.2900
  • 2500:$2.2900
  • 5000:$2.1900
SPP20N60C3XKSA1
DISTI # 95W8643		Infineon Technologies AGMOSFET, N-CH, 600V, 20.7A, 208W, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:20.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$4.7100
  • 10:$4.0000
  • 25:$3.8200
  • 50:$3.6500
  • 100:$3.4700
  • 250:$3.2900
  • 500:$2.9600
SPP20N60C3XKSA1
DISTI # 726-SPP20N60C3XKSA1		Infineon Technologies AGMOSFET N-Ch 650V 20.7A TO220-3
RoHS: Compliant		0
  • 1:$4.7100
  • 10:$4.0000
  • 100:$3.4700
  • 250:$3.2900
  • 500:$2.9600
SPP20N60C3XKSA1
DISTI # 2325467		Infineon Technologies AGMOSFET, N-CH, 650V, 20.7A, TO-220
RoHS: Compliant		0
  • 1:$5.3800
  • 5:$5.0300
  • 20:$4.4500
  • 50:$4.2000
  • 100:$3.9900
SPP20N60C3XKSA1
DISTI # 2325467		Infineon Technologies AGMOSFET, N-CH, 650V, 20.7A, TO-220
RoHS: Compliant		0
  • 1:£3.5300
  • 10:£2.3100
  • 100:£2.2800
  • 250:£2.2500
  • 500:£2.2200
Imagen Parte # Descripción
SPP20N60C3XKSA1

Mfr.#: SPP20N60C3XKSA1

OMO.#: OMO-SPP20N60C3XKSA1

 MOSFET N-Ch 650V 20.7A TO220-3
SPP20N60S5HKSA1

Mfr.#: SPP20N60S5HKSA1

OMO.#: OMO-SPP20N60S5HKSA1

 MOSFET N-Ch 600V 20A TO220-3
SPP20N60CFDHKSA1

Mfr.#: SPP20N60CFDHKSA1

OMO.#: OMO-SPP20N60CFDHKSA1

 MOSFET Order Manufacturer Part Number SPP20N60CFD
SPP20N60S5HKSA1

Mfr.#: SPP20N60S5HKSA1

OMO.#: OMO-SPP20N60S5HKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 600V 20A TO220-3
SPP20N60CFDXKSA1

Mfr.#: SPP20N60CFDXKSA1

OMO.#: OMO-SPP20N60CFDXKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 20.7A TO-220
SPP20N60C3.

Mfr.#: SPP20N60C3.

OMO.#: OMO-SPP20N60C3--1190

 Nuevo y original
SPP20N60CFD STP23NM60N

Mfr.#: SPP20N60CFD STP23NM60N

OMO.#: OMO-SPP20N60CFD-STP23NM60N-1190

 Nuevo y original
SPP20N60S5XKSA1

Mfr.#: SPP20N60S5XKSA1

OMO.#: OMO-SPP20N60S5XKSA1-INFINEON-TECHNOLOGIES

 HIGH POWER_LEGACY
SPP20N60SJ

Mfr.#: SPP20N60SJ

OMO.#: OMO-SPP20N60SJ-1190

 Nuevo y original
SPP20N6C3

Mfr.#: SPP20N6C3

OMO.#: OMO-SPP20N6C3-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SPP20N60C3XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,73 US$
3,73 US$
10
3,55 US$
35,47 US$
100
3,36 US$
336,04 US$
500
3,17 US$
1 586,85 US$
1000
2,99 US$
2 987,00 US$
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