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Parte # | Mfg. | Descripción | Valores | Precio |
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SI4896DY-T1-E3 DISTI # V36:1790_09216632 | Vishay Intertechnologies | Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
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SI4896DY-T1-E3 DISTI # V72:2272_09216632 | Vishay Intertechnologies | Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 1450 |
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SI4896DY-T1-E3 DISTI # SI4896DY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 6949In Stock |
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SI4896DY-T1-E3 DISTI # SI4896DY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 6949In Stock |
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SI4896DY-T1-E3 DISTI # SI4896DY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 80V 6.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 5000In Stock |
|
SI4896DY-T1-E3 DISTI # 32675133 | Vishay Intertechnologies | Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 1460 |
|
SI4896DY-T1-E3 DISTI # SI4896DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4896DY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
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SI4896DY-T1-E3 DISTI # SI4896DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R (Alt: SI4896DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
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SI4896DY-T1-E3 DISTI # 06J7957 | Vishay Intertechnologies | Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7957) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
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SI4896DY-T1-E3 DISTI # 06J7957 | Vishay Intertechnologies | N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:9.5A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W RoHS Compliant: Yes | 1300 |
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SI4896DY-T1-E3 DISTI # 35K3481 | Vishay Intertechnologies | N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:9.5A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.56W RoHS Compliant: Yes | 0 |
|
SI4896DY-T1-E3 DISTI # 781-SI4896DY-T1-E3 | Vishay Intertechnologies | MOSFET 80V Vds 20V Vgs SO-8 RoHS: Compliant | 5403 |
|
SI4896DY-E3 DISTI # 781-SI4896DY-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4896DY-T1-E3 RoHS: Compliant | 0 | |
SI4896DY-T1-E3 DISTI # 1807296 | Vishay Intertechnologies | N-CH MOSFET SO-8 80V 16.5MOHM @ 10V QG=, RL | 2490 |
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SI4896DY-T1-E3 | Vishay Intertechnologies | MOSFET 80V Vds 20V Vgs SO-8 RoHS: Compliant | Americas - 40000 | |
SI4896DY-T1-GE3 | Vishay Intertechnologies | MOSFET 80V Vds 20V Vgs SO-8 | Americas - 10000 | |
SI4896DY-T1-E3 DISTI # 1612650RL | Vishay Intertechnologies | MOSFET, P, SO-8 RoHS: Compliant | 0 |
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SI4896DY-T1-E3 DISTI # 1612650 | Vishay Intertechnologies | MOSFET, P, SO-8 RoHS: Compliant | 8780 |
|
SI4896DY-T1-E3 DISTI # 1612650 | Vishay Intertechnologies | MOSFET, P, SO-8 | 8635 |
|
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: SI4896DY-T1-GE3 OMO.#: OMO-SI4896DY-T1-GE3 |
MOSFET 80V Vds 20V Vgs SO-8 | |
Mfr.#: SI4896DY-T1-E3 OMO.#: OMO-SI4896DY-T1-E3 |
MOSFET 80V Vds 20V Vgs SO-8 | |
Mfr.#: SI4896DY-T1-GE3-CUT TAPE |
Nuevo y original | |
Mfr.#: SI4896DY OMO.#: OMO-SI4896DY-1190 |
Nuevo y original | |
Mfr.#: SI4896DY-T1 OMO.#: OMO-SI4896DY-T1-1190 |
MOSFET 80V Vds 20V Vgs SO-8 | |
Mfr.#: SI4896DY-T1-D3 OMO.#: OMO-SI4896DY-T1-D3-1190 |
Nuevo y original | |
Mfr.#: SI4896DY-T1-E3 OMO.#: OMO-SI4896DY-T1-E3-VISHAY |
MOSFET N-CH 80V 6.7A 8-SOIC | |
Mfr.#: SI4896DY-T1-GE3 OMO.#: OMO-SI4896DY-T1-GE3-VISHAY |
MOSFET N-CH 80V 6.7A 8SOIC | |
Mfr.#: SI4896DYT1 OMO.#: OMO-SI4896DYT1-1190 |
Nuevo y original |