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FDB031N08

FDB031N08
Mfr. #:
FDB031N08
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 75V N-Channel PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDB031N08 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
75 V
Id - Corriente de drenaje continua:
235 A
Rds On - Resistencia de la fuente de drenaje:
3.1 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
375 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
FDB031N08
Tipo de transistor:
1 N-Channel
Ancho:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
121 ns
Tipo de producto:
MOSFET
Hora de levantarse:
191 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
335 ns
Tiempo típico de retardo de encendido:
230 ns
Unidad de peso:
0.062153 oz
Tags
FDB03, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
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***Yang
Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
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***ernational Rectifier
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***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ark
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***ical
Trans MOSFET N-CH Si 60V 270A Automotive 3-Pin(2+Tab) D2PAK T/R
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***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Dynamic dv/dt Rating; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
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IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK
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Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
***nell
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D
***p One Stop Global
Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7
***emi
N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ical
Trans MOSFET N-CH 60V 193A 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 200kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 200K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Parte # Mfg. Descripción Valores Precio
FDB031N08
DISTI # V72:2272_06300773		ON Semiconductor75V,235A,3.1M OHM,NCH POWER497
  • 250:$3.2100
  • 100:$3.4740
  • 25:$4.1070
  • 10:$4.1090
  • 1:$4.8040
FDB031N08
DISTI # V36:1790_06300773		ON Semiconductor75V,235A,3.1M OHM,NCH POWER0
    FDB031N08
    DISTI # FDB031N08CT-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1595In Stock
    • 100:$4.3271
    • 10:$5.2770
    • 1:$5.9100
    FDB031N08
    DISTI # FDB031N08DKR-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1595In Stock
    • 100:$4.3271
    • 10:$5.2770
    • 1:$5.9100
    FDB031N08
    DISTI # FDB031N08TR-ND    		ON SemiconductorMOSFET N-CH 75V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		800In Stock
    • 2400:$2.7256
    • 1600:$2.8690
    • 800:$3.0739
    FDB031N08
    DISTI # 32316888    		ON Semiconductor75V,235A,3.1M OHM,NCH POWER5600
    • 800:$2.9175
    FDB031N08
    DISTI # 31601303    		ON Semiconductor75V,235A,3.1M OHM,NCH POWER497
    • 250:$3.2100
    • 100:$3.5760
    • 25:$4.1070
    • 10:$4.1090
    • 3:$4.8040
    FDB031N08
    DISTI # FDB031N08    		ON SemiconductorTrans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB031N08)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 800:$2.0900
    • 1600:$2.0900
    • 3200:$2.0900
    • 4800:$2.0900
    • 8000:$1.9900
    FDB031N08
    DISTI # 07P9157    		ON SemiconductorFET 75V 3.1 MOHM D2PAK / REEL0
    • 9600:$2.4500
    • 2400:$2.5300
    • 800:$2.7700
    • 1:$2.7900
    FDB031N08
    DISTI # 512-FDB031N08    		ON SemiconductorMOSFET 75V N-Channel PowerTrench
    RoHS: Compliant    		18377
    • 1:$4.9400
    • 10:$4.2000
    • 100:$3.6400
    • 250:$3.4500
    • 500:$3.1000
    FDB031N08ON SemiconductorN-Channel 75 V 3.1 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3
    RoHS: Compliant    		8800Reel
    • 800:$2.2700
    FDB031N08Fairchild Semiconductor Corporation 638
      FDB031N08Fairchild Semiconductor CorporationPower Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		Europe - 298
        FDB031N08
        DISTI # XSFP00000106362        		Fairchild Semiconductor Corporation 
        RoHS: Compliant        		7200 in Stock0 on Order
        • 7200:$4.1300
        • 800:$4.5400
        FDB031N08
        DISTI # 3004020        		ON SemiconductorMOSFET, N-CH, 235A, 75V, TO-263
        RoHS: Compliant        		0
        • 1000:$3.9000
        • 500:$4.2300
        • 250:$4.6200
        • 100:$5.0800
        • 10:$5.6300
        • 1:$6.3400
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        Disponibilidad
        Valores:
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        Ingrese la cantidad:
        El precio actual de FDB031N08 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        4,94 US$
        4,94 US$
        10
        4,20 US$
        42,00 US$
        100
        3,64 US$
        364,00 US$
        250
        3,45 US$
        862,50 US$
        500
        3,10 US$
        1 550,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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