SI9936BDY-T1-GE3

SI9936BDY-T1-GE3
Mfr. #:
SI9936BDY-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 30V 6.0A 2.0W 35mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI9936BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
-
embalaje
Tape & Reel (TR)
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
8-SO
Tipo FET
2 N-Channel (Dual)
Potencia máxima
1.1W
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
4.5A
Rds-On-Max-Id-Vgs
35 mOhm @ 6A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
13nC @ 10V
Tags
SI9936BDY-T, SI9936BD, SI9936B, SI9936, SI993, SI99, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 4.5A 8-Pin SOIC N T/R
***nell
DUAL N CHANNEL MOSFET
***
30V, 35 MOHMS@10V, DUAL
***ment14 APAC
DUAL N CH MOSFET; Transistor Polarity:N; DUAL N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:4.5A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.028ohm; Rds(on) Test Voltage Vgs:4.5V
Parte # Mfg. Descripción Valores Precio
SI9936BDY-T1-GE3
DISTI # SI9936BDY-T1-GE3-ND
Vishay SiliconixMOSFET 2N-CH 30V 4.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI9936BDY-T1-GE3
    DISTI # 781-SI9936BDY-GE3
    Vishay IntertechnologiesMOSFET 30V 6.0A 2.0W 35mohm @ 10V
    RoHS: Compliant
    0
      SI9936BDY-T1-GE3
      DISTI # 1871397
      Vishay IntertechnologiesDUAL N CH MOSFET
      RoHS: Compliant
      0
      • 1:$2.7900
      • 10:$2.1900
      • 50:$1.7000
      • 100:$1.4300
      • 500:$1.2300
      • 2500:$1.1600
      • 5000:$1.0800
      • 7500:$1.0200
      Imagen Parte # Descripción
      SI9936BDY-T1-E3

      Mfr.#: SI9936BDY-T1-E3

      OMO.#: OMO-SI9936BDY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4936CDY-GE3
      SI9936BDY-T1-GE3

      Mfr.#: SI9936BDY-T1-GE3

      OMO.#: OMO-SI9936BDY-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 6.0A 2.0W 35mohm @ 10V
      SI9936BDY-T1-E3

      Mfr.#: SI9936BDY-T1-E3

      OMO.#: OMO-SI9936BDY-T1-E3-VISHAY

      IGBT Transistors MOSFET 30V 6.0A 0.035Ohm
      SI9936BDY

      Mfr.#: SI9936BDY

      OMO.#: OMO-SI9936BDY-1190

      DUAL N CH MOSFET
      SI9936BDY-E3

      Mfr.#: SI9936BDY-E3

      OMO.#: OMO-SI9936BDY-E3-1190

      INSTOCK
      SI9936BDY-T1

      Mfr.#: SI9936BDY-T1

      OMO.#: OMO-SI9936BDY-T1-1190

      Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de SI9936BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
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      10
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      100
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      500
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      1000
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      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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