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Parte # | Mfg. | Descripción | Valores | Precio |
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FDP2710_F085 DISTI # 31043997 | ON Semiconductor | 250V N-CHANNEL POWERTRENCH MOS | 800 |
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FDP2710-F085 DISTI # FDP2710-F085-ND | ON Semiconductor | MOSFET N-CH 250V 4A TO-220 RoHS: Compliant Min Qty: 800 Container: Tube | Temporarily Out of Stock |
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FDP2710_F085 DISTI # V36:1790_06359181 | ON Semiconductor | 250V N-CHANNEL POWERTRENCH MOS | 0 |
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FDP2710_F085 DISTI # FDP2710_F085 | ON Semiconductor | Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-220AB T/R - Bulk (Alt: FDP2710_F085) Min Qty: 167 Container: Bulk | Americas - 0 |
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FDP2710_F085 DISTI # FDP2710-F085 | ON Semiconductor | Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-220AB T/R - Rail/Tube (Alt: FDP2710-F085) RoHS: Compliant Min Qty: 800 Container: Tube | Americas - 0 |
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FDP2710_F085 DISTI # FDP2710-F085 | ON Semiconductor | Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-220AB T/R (Alt: FDP2710-F085) RoHS: Compliant Min Qty: 800 Container: Tape and Reel | Asia - 0 |
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FDP2710-F085 DISTI # 48AC1024 | ON Semiconductor | NMOS TO220 250V 47 MOHM / TUBE | 0 |
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FDP2710-F085 DISTI # 512-FDP2710_F085 | ON Semiconductor | MOSFET 250V NCHAN PwrTrench RoHS: Compliant | 1238 |
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FDP2710_F085 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 100 |
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FDP2710F085 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 6000 | |
FDP2710-F085 | ON Semiconductor | N-Ch PowerTrench MOSFET 250V,50A,47m | 500 |
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Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: FDP2710-F085 OMO.#: OMO-FDP2710-F085 |
MOSFET 250V NCHAN PwrTrench | |
Mfr.#: FDP2710 OMO.#: OMO-FDP2710 |
MOSFET 250V N-Channel PowerTrench | |
Mfr.#: FDP2710 OMO.#: OMO-FDP2710-ON-SEMICONDUCTOR |
MOSFET N-CH 250V 50A TO-220 | |
Mfr.#: FDP2710-F085 |
MOSFET N-CH 250V 4A TO-220 | |
Mfr.#: FDP2710F085 OMO.#: OMO-FDP2710F085-1190 |
Power Field-Effect Transistor, 4A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Mfr.#: FDP2710_F085 OMO.#: OMO-FDP2710-F085-1190 |
250V N-CHANNEL POWERTRENCH MOS |