NVJD4152PT1G

NVJD4152PT1G
Mfr. #:
NVJD4152PT1G
Fabricante:
ON Semiconductor
Descripción:
Trench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R (Alt: NVJD4152PT1G)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NVJD4152PT1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
NVJD41, NVJD4, NVJD, NVJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ
***enic
20V 880mA 272mW 260m¦¸@4.5V880mA 1.2V@250¦ÌA 2 P-Channel SC-88 MOSFETs ROHS
***ical
Trans MOSFET P-CH 20V 1A Automotive 6-Pin SOT-363 T/R
***et Europe
Trench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R
Parte # Mfg. Descripción Valores Precio
NVJD4152PT1G
DISTI # NVJD4152PT1G
ON SemiconductorTrench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R (Alt: NVJD4152PT1G)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 3000
  • 3000:€0.0633
  • 6000:€0.0478
  • 12000:€0.0435
  • 18000:€0.0390
  • 30000:€0.0368
NVJD4152PT1G
DISTI # NVJD4152PT1G
ON SemiconductorTrench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R (Alt: NVJD4152PT1G)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
    Imagen Parte # Descripción
    NVJD4152P

    Mfr.#: NVJD4152P

    OMO.#: OMO-NVJD4152P-1190

    Nuevo y original
    NVJD4152PT1G

    Mfr.#: NVJD4152PT1G

    OMO.#: OMO-NVJD4152PT1G-1190

    Trench Small Signal Dual P-Channel MOSFET 20V Drain Source Voltage 1A Continuous Drain Current 0.35W Power Dissipation ESD Protected 6-Pin SOT-363 T/R (Alt: NVJD4152PT1G)
    NVJD4158CT1G

    Mfr.#: NVJD4158CT1G

    OMO.#: OMO-NVJD4158CT1G-1190

    Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R (Alt: NVJD4158CT1G)
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de NVJD4152PT1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,06 US$
    0,06 US$
    10
    0,06 US$
    0,60 US$
    100
    0,06 US$
    5,64 US$
    500
    0,05 US$
    26,65 US$
    1000
    0,05 US$
    50,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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