NDS352AP

Mfr. #:: NDS352AP
Fabricante:: ON Semiconductor / Fairchild
Descripción:: MOSFET P-Ch LL FET Enhancement Mode
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: NDS352AP Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SSOT-3

Número de canales:: 1 Channel

Polaridad del transistor:: P-Channel

Vds - Voltaje de ruptura de drenaje-fuente:: 30 V

Id - Corriente de drenaje continua:: 900 mA

Rds On - Resistencia de la fuente de drenaje:: 500 mOhms

Vgs - Voltaje puerta-fuente:: 20 V

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 500 mW (1/2 W)

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Carrete

Altura:: 1.12 mm

Longitud:: 2.9 mm

Producto:: Pequeña señal MOSFET

Serie:: NDS352AP

Tipo de transistor:: 1 P-Channel

Ancho:: 1.4 mm

Marca:: ON Semiconductor / Fairchild

Otoño:: 17 ns, 16 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 17 ns, 16 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 35 ns

Tiempo típico de retardo de encendido:: 5 ns, 8 ns

Parte # Alias:: NDS352AP_NL

Unidad de peso:: 0.001058 oz

Tags: NDS352AP, NDS352A, NDS352, NDS35, NDS3, NDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDS352AP Puntajes y reseñas

R***y

Very good price and quickly delivered.

2019-05-15

V***p

Thanks

2019-04-03

NDS352AP Descripción

***emi: P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ

*** Source Electronics: MOSFET P-CH 30V 0.9A SSOT3 / Trans MOSFET P-CH 30V 0.9A 3-Pin SOT-23 T/R

***enic: 30V 900mA 500mW 300m´Î@10V1A 2.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ment14 APAC: MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:900mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS352P; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-2.5V

***rchild Semiconductor: These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
NDS352AP DISTI # V79:2366_17787352	ON Semiconductor	NDS352AP	3	3000:$0.1081 1000:$0.1301 500:$0.1565 100:$0.1739 10:$0.3202 1:$0.4275
NDS352AP DISTI # NDS352APCT-ND	ON Semiconductor	MOSFET P-CH 30V 0.9A SSOT3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	21049In Stock	1000:$0.1548 500:$0.2064 100:$0.3010 10:$0.4390 1:$0.5600
NDS352AP DISTI # NDS352APDKR-ND	ON Semiconductor	MOSFET P-CH 30V 0.9A SSOT3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	21049In Stock	1000:$0.1548 500:$0.2064 100:$0.3010 10:$0.4390 1:$0.5600
NDS352AP DISTI # NDS352APTR-ND	ON Semiconductor	MOSFET P-CH 30V 0.9A SSOT3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	3000:$0.1378
NDS352AP DISTI # 19875427	ON Semiconductor	NDS352AP	243000	180000:$0.1414 120000:$0.1456 60000:$0.1523 3000:$0.1571
NDS352AP DISTI # NDS352AP	ON Semiconductor	Trans MOSFET P-CH 30V 0.9A 3-Pin SuperSOT T/R - Tape and Reel (Alt: NDS352AP) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 141000	3000:$0.0899 6000:$0.0899 12000:$0.0879 18000:$0.0869 30000:$0.0849
NDS352AP DISTI # NDS352AP	ON Semiconductor	Trans MOSFET P-CH 30V 0.9A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: NDS352AP) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 8999
NDS352AP DISTI # NDS352AP	ON Semiconductor	Trans MOSFET P-CH 30V 0.9A 3-Pin SuperSOT T/R (Alt: NDS352AP) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0
NDS352AP DISTI # 58K2017	ON Semiconductor	Trans MOSFET P-CH 30V 0.9A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58K2017) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.4500 25:$0.3370 50:$0.2600 100:$0.1830 250:$0.1680 500:$0.1520 1000:$0.1370
NDS352AP DISTI # 26M1843	ON Semiconductor	MOSFET, P, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:900mA,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.7V,Power Dissipation Pd:500mW, , RoHS Compliant: Yes	2756	1:$0.4500 25:$0.3370 50:$0.2600 100:$0.1830 250:$0.1680 500:$0.1520 1000:$0.1370
NDS352AP DISTI # 58K2017	ON Semiconductor	P MOSFET, -30V, -900mA, SUPER SOT-3,Transistor Polarity:P Channel,Continuous Drain Current Id:900mA,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.7V , RoHS Compliant: Yes	0	1:$0.3830 25:$0.2870 50:$0.2210 100:$0.1560 250:$0.1430 500:$0.1300 1000:$0.1170
NDS352AP. DISTI # 26AC2659	Fairchild Semiconductor Corporation	30V SSOT-3 PCH , ROHS COMPLIANT: YES	141000	1:$0.1180 3000:$0.1180
NDS352AP DISTI # 512-NDS352AP	ON Semiconductor	MOSFET P-Ch LL FET Enhancement Mode RoHS: Compliant	471	1:$0.4500 10:$0.3370 100:$0.1830 1000:$0.1370 3000:$0.1180
NDS352AP_D87Z DISTI # 512-NDS352APD87Z	ON Semiconductor	MOSFET P-Ch LL FET Enhancement Mode RoHS: Compliant	0
NDS352AP	ON Semiconductor	P-Channel 30 V 0.5 O Surface Mount Field Effect Transistor - SSOT-3 RoHS: Compliant	48000Reel	3000:$0.1020 6000:$0.0961 9000:$0.0948
NDS352AP	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	22280	1000:$0.1600 500:$0.1700 100:$0.1800 25:$0.1900 1:$0.2000
NDS352AP	Fairchild Semiconductor Corporation		3902	7:$0.7500 21:$0.3750 135:$0.2250 668:$0.1500 2335:$0.1125
NDS352AP	National Semiconductor Corporation		2648
NDS352AP	National Semiconductor Corporation		2400	10:$0.5250 30:$0.2625 192:$0.1575 954:$0.1050
NDS352AP	Fairchild Semiconductor Corporation		2400
NDS352AP	Fairchild Semiconductor Corporation		8529
NDS352AP	Fairchild Semiconductor Corporation	MOSFET Transistor, P-Channel, SOT-23	63467	23149:$0.0567 7938:$0.0648 1:$0.2160
NDS352AP	Fairchild Semiconductor Corporation	MOSFET Transistor, P-Channel, SOT-23	6348	3705:$0.0810 310:$0.1080 1:$0.5400
NDS352AP	Fairchild Semiconductor Corporation	MOSFET Transistor, P-Channel, SOT-23	4236	4001:$0.1750 1334:$0.2000 1:$1.0000
NDS352AP	National Semiconductor Corporation	MOSFET Transistor, P-Channel, SOT-23	1920	168:$0.2000 21:$0.3000 1:$1.0000
NDS352AP	Freescale Semiconductor	MOSFET Transistor, P-Channel, SOT-23	80	21:$0.3000 6:$0.5000 1:$1.0000
NDS352AP	NA	MOSFET Transistor, P-Channel, SOT-23	82	9:$2.2500 3:$3.0000 1:$4.5000
NDS352AP	National Semiconductor Corporation	MOSFET Transistor, P-Channel, SOT-23	2240	310:$0.1080 38:$0.1620 1:$0.5400
NDS352AP DISTI # 6711084	ON Semiconductor	MOSFET P-CHANNEL 30V 0.9A SUPERSOT3, PK	620	10:£0.2730 50:£0.1850 100:£0.1190 250:£0.1150 500:£0.1120
NDS352AP DISTI # 6711084P	ON Semiconductor	MOSFET P-CHANNEL 30V 0.9A SUPERSOT3, RL	4000	50:£0.1850 100:£0.1190 250:£0.1150 500:£0.1120
NDS352AP	Fairchild Semiconductor Corporation	RoHS: Not Compliant	Europe - 2070
NDS352AP		INSTOCK	859
NDS352AP	Fairchild Semiconductor Corporation	INSTOCK	5181
NDS352AP	Fairchild Semiconductor Corporation	INSTOCK	150
NDS352AP	FSCD	INSTOCK	1444
NDS352AP	National Semiconductor Corporation	INSTOCK	9038
NDS352AP DISTI # 9846395	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	2756	1:$0.7120 10:$0.5340 100:$0.2900
NDS352AP DISTI # 9846395RL	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	0	1:$0.7120 10:$0.5340 100:$0.2900
NDS352AP DISTI # XSFP00000102200	Fairchild Semiconductor Corporation	RoHS: Compliant	82779	3000:$0.1360 82779:$0.1275
NDS352AP DISTI # 9846395	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	4941	5:£0.3290 25:£0.3140 100:£0.1600 250:£0.1580 500:£0.1300

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Disponibilidad

Valores:: 23
En orden:: 2006
Ingrese la cantidad:

El precio actual de NDS352AP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,44 US$~~; ~~0,44 US$~~

10: ~~0,34 US$~~; ~~3,37 US$~~

100: ~~0,18 US$~~; ~~18,30 US$~~

1000: ~~0,14 US$~~; ~~137,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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NDS352AP

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

R***y

V***p

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes