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FDS3670

FDS3670
Mfr. #:
FDS3670
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET SO-8 N-CH 100V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS3670 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS3670 DatasheetFDS3670 Datasheet (P4-P6)FDS3670 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
6.3 A
Rds On - Resistencia de la fuente de drenaje:
22 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
3.9 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
31 S
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
56 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
FDS3670_NL
Unidad de peso:
0.002998 oz
Tags
FDS3670, FDS367, FDS36, FDS3, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V 6.3A 8-SOIC
***Yang
MOSFET SO-8 N-CH 100V - Tape and Reel
***el Electronic
ICL7107 3 1/2 DIGIT ADC
***el Nordic
Contact for details
*** Source Electronics
MOSFET N-CH 100V 7.5A 8-SOIC / Trans MOSFET N-CH 100V 7.5A 8-Pin SOIC T/R
***sible Micro
Transistor, N-channel Power MOSFET, 100V, 7.5A, 22mohm, SO-8
***emi
N-Channel PowerTrench® MOSFET, 100V, 7.5A, 22mΩ
***ure Electronics
N-Channel 100 V 22 mOhm PowerTrench Mosfet SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.5 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 22Milliohms; ID 6.9A; SO-8; PD 2.5W; VGS +/-20
***ure Electronics
IRF7473PbF Series N-Channel 100 V 26 mOhm 2.5 W HEXFET Power MOSFET - SOIC-8
***ical
Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm;
***nell
MOSFET N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.9A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.9A; Fall Time tf: 11ns; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 55A; Rise Time: 20ns; Termination Type: Surface Mount Device; Voltage Vgs Max: 20V
***ical
Trans MOSFET N-CH 100V 6.7A 8-Pin FLMP SOIC T/R
***inecomponents.com
100V, N-CHANNEL, POWER TRENCH MOSFET, SO8BL
***nell
MOSFET, N, SMD, FLMP, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:6.7A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:60A; No. of Pins:8; Power Dissipation:3mW; Voltage, Vds Max:100V
***p One Stop
Trans MOSFET N-CH 100V 5.7A Automotive 8-Pin PowerPAK SO T/R
***roFlash
Single N-Channel 100 V 0.025 Ohm Surface Mount Power Mosfet - PowerPAK-SO-8
***ment14 APAC
MOSFET, N CH, 100V, 5.7A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.7A; Power Dissipation Pd:1.9W; Voltage Vgs Max:20V
***et
Trans MOSFET N-CH 100V 6A 8-Pin SOIC N T/R
***ter Electronics
SO8, SINGLE, 100V, 0.035 OHM N-CH ULTRAFET TRENCH MOSFET
***ser
MOSFETs 100V, 6a .35Ohm/VGS=1V
***or
MOSFET N-CH 100V 5.5A 8SOIC
***ser
MOSFETs 100V NCh PowerMOSFET UltraFET
***et
PWR MOS ULTRAFET 100V/5.5A/.039 OHM N-CH
Parte # Mfg. Descripción Valores Precio
FDS3670
DISTI # FDS3670-ND		ON SemiconductorMOSFET N-CH 100V 6.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS3670
    DISTI # 512-FDS3670    		ON SemiconductorMOSFET SO-8 N-CH 100V
    RoHS: Compliant    		0
      FDS3670Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 6.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		31237
      • 1000:$1.5300
      • 500:$1.6100
      • 100:$1.6700
      • 25:$1.7400
      • 1:$1.8800
      Imagen Parte # Descripción
      FDS6670AS

      Mfr.#: FDS6670AS

      OMO.#: OMO-FDS6670AS

      		 MOSFET 30V N-CH POWER TRENCH SYNCFET
      FDS4435BZ , 1N5253BTR

      Mfr.#: FDS4435BZ , 1N5253BTR

      OMO.#: OMO-FDS4435BZ-1N5253BTR-1190

      		 Nuevo y original
      FDS4480/4480

      Mfr.#: FDS4480/4480

      OMO.#: OMO-FDS4480-4480-1190

      		 Nuevo y original
      FDS4672A

      Mfr.#: FDS4672A

      OMO.#: OMO-FDS4672A-ON-SEMICONDUCTOR

      		 MOSFET N-CH 40V 11A 8SOIC
      FDS5672A

      Mfr.#: FDS5672A

      OMO.#: OMO-FDS5672A-1190

      		 Nuevo y original
      FDS6670A

      Mfr.#: FDS6670A

      OMO.#: OMO-FDS6670A-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 13A 8-SOIC
      FDS6982AS/ROHS

      Mfr.#: FDS6982AS/ROHS

      OMO.#: OMO-FDS6982AS-ROHS-1190

      		 Nuevo y original
      FDS6993

      Mfr.#: FDS6993

      OMO.#: OMO-FDS6993-ON-SEMICONDUCTOR

      		 MOSFET 2P-CH 30V/12V 8SOIC
      FDS8974A

      Mfr.#: FDS8974A

      OMO.#: OMO-FDS8974A-1190

      		 Nuevo y original
      FDS6375-CUT TAPE

      Mfr.#: FDS6375-CUT TAPE

      OMO.#: OMO-FDS6375-CUT-TAPE-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de FDS3670 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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