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SIHG70N60AEF-GE3

SIHG70N60AEF-GE3
Mfr. #:
SIHG70N60AEF-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 600V 60A TO247AC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHG70N60AEF-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHG70N60AEF-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHG70, SIHG7, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
EF Series Power MOSFET N-Channel with Fast Body Diode 600V VDS ±20V VGS 60A ID 3-Pin TO-247AC
***i-Key
MOSFET N-CH 600V 60A TO247AC
***ark
Mosfet, N-Ch, 600V, 60A, To-247Ac; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.0355Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 60A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0355ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:417W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:EF Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, 600V, 60A, TO-247AC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.0355ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:417W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EF Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Parte # Mfg. Descripción Valores Precio
SIHG70N60AEF-GE3
DISTI # SIHG70N60AEF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 60A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		500In Stock
  • 500:$7.6962
  • 100:$8.6516
  • 25:$9.8192
  • 10:$10.2440
  • 1:$11.1500
SIHG70N60AEF-GE3
DISTI # SIHG70N60AEF-GE3		Vishay IntertechnologiesEF Series Power MOSFET N-Channel with Fast Body Diode 600V VDS ±20V VGS 60A ID 3-Pin TO-247AC - Tape and Reel (Alt: SIHG70N60AEF-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$6.3900
  • 3000:$6.5900
  • 2000:$6.7900
  • 1000:$7.0900
  • 500:$7.2900
SIHG70N60AEF-GE3
DISTI # 43AC0286		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.0355ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes1000
  • 500:$7.4000
  • 250:$7.9200
  • 100:$8.6900
  • 50:$8.9400
  • 25:$9.4500
  • 10:$10.2100
  • 1:$11.2400
SIHG70N60AEF-GE3
DISTI # 78-SIHG70N60AEF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 20V Vgs TO-247AC
RoHS: Compliant		451
  • 1:$11.1300
  • 10:$10.1100
  • 25:$9.3600
  • 50:$8.8500
  • 100:$8.6000
  • 250:$7.8400
  • 500:$7.3300
  • 1000:$6.7300
SIHG70N60AEF-GE3
DISTI # 2802793		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC
RoHS: Compliant		992
  • 250:$11.7200
  • 100:$12.4000
  • 50:$13.1500
  • 10:$14.3200
  • 5:$16.5200
  • 1:$18.9500
SIHG70N60AEF-GE3
DISTI # 2802793		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC992
  • 100:£6.2300
  • 50:£6.4100
  • 10:£6.7800
  • 5:£7.4300
  • 1:£8.0700
Imagen Parte # Descripción
SIHG70N60AEF-GE3

Mfr.#: SIHG70N60AEF-GE3

OMO.#: OMO-SIHG70N60AEF-GE3

 MOSFET 600V Vds 20V Vgs TO-247AC
SIHG70N60EF-GE3

Mfr.#: SIHG70N60EF-GE3

OMO.#: OMO-SIHG70N60EF-GE3

 MOSFET RECOMMENDED ALT 78-SIHW70N60EF-GE3
SIHG70N60EF

Mfr.#: SIHG70N60EF

OMO.#: OMO-SIHG70N60EF-1190

 Nuevo y original
SIHG70N60EF-GE3

Mfr.#: SIHG70N60EF-GE3

OMO.#: OMO-SIHG70N60EF-GE3-VISHAY

 MOSFET N-CH 600V 70A TO-247AC
SIHG70N60EFEF-GE3

Mfr.#: SIHG70N60EFEF-GE3

OMO.#: OMO-SIHG70N60EFEF-GE3-1190

 Nuevo y original
SIHG70N60AEF-GE3

Mfr.#: SIHG70N60AEF-GE3

OMO.#: OMO-SIHG70N60AEF-GE3-VISHAY

 MOSFET N-CH 600V 60A TO247AC
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de SIHG70N60AEF-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,58 US$
9,58 US$
10
9,11 US$
91,06 US$
100
8,63 US$
862,65 US$
500
8,15 US$
4 073,65 US$
1000
7,67 US$
7 668,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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