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IPD60R400CEAUMA1

IPD60R400CEAUMA1
Mfr. #:
IPD60R400CEAUMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET CONSUMER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R400CEAUMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPD60R400CEAUMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
CoolMOS CE
Ancho:
6.22 mm
Marca:
Infineon Technologies
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
IPD60R400CE SP001396880
Unidad de peso:
0.011993 oz
Tags
IPD60R400CEA, IPD60R40, IPD60R4, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
INFINEON - IPD60R400CEAUMA1 - MOSFET Transistor, N Channel, 14.7 A, 600 V, 0.34 ohm, 10 V, 3 V
***ark
Mosfet, N-Ch, 600V, 14.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:14.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Parte # Mfg. Descripción Valores Precio
IPD60R400CEAUMA1
DISTI # V72:2272_13982031		Infineon Technologies AGTrans MOSFET N-CH 600V 14.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		258
  • 250:$0.6797
  • 100:$0.6868
  • 25:$0.8659
  • 10:$1.0001
  • 1:$1.1768
IPD60R400CEAUMA1
DISTI # V36:1790_13982031		Infineon Technologies AGTrans MOSFET N-CH 600V 14.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.3849
  • 1250000:$0.3852
  • 250000:$0.4171
  • 25000:$0.4758
  • 2500:$0.4857
IPD60R400CEAUMA1
DISTI # IPD60R400CEAUMA1DKR-ND		Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2467In Stock
  • 1000:$0.5360
  • 500:$0.6789
  • 100:$0.8218
  • 10:$1.0540
  • 1:$1.1800
IPD60R400CEAUMA1
DISTI # IPD60R400CEAUMA1TR-ND		Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.4441
  • 5000:$0.4614
  • 2500:$0.4857
IPD60R400CEAUMA1
DISTI # IPD60R400CEAUMA1CT-ND		Infineon Technologies AGCONSUMER
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5360
  • 500:$0.6789
  • 100:$0.8218
  • 10:$1.0540
  • 1:$1.1800
IPD60R400CEAUMA1
DISTI # 31035569		Infineon Technologies AGTrans MOSFET N-CH 600V 14.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		258
  • 14:$1.1768
IPD60R400CEAUMA1
DISTI # IPD60R400CEAUMA1		Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPD60R400CEAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4189
  • 15000:$0.4269
  • 10000:$0.4419
  • 5000:$0.4579
  • 2500:$0.4759
IPD60R400CEAUMA1
DISTI # SP001396880		Infineon Technologies AGCONSUMER (Alt: SP001396880)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.3929
  • 15000:€0.4229
  • 10000:€0.4579
  • 5000:€0.4999
  • 2500:€0.6109
IPD60R400CEAUMA1
DISTI # 34AC1681		Infineon Technologies AGMOSFET, N-CH, 600V, 14.7A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:14.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.34ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2500
  • 1000:$0.5010
  • 500:$0.6340
  • 250:$0.6760
  • 100:$0.7180
  • 50:$0.7900
  • 25:$0.8620
  • 10:$0.9340
  • 1:$1.0900
IPD60R400CEAUMA1
DISTI # 726-IPD60R400CEAUMA1		Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant		2099
  • 1:$1.0800
  • 10:$0.9250
  • 100:$0.7110
  • 500:$0.6280
  • 1000:$0.4960
  • 2500:$0.4400
  • 10000:$0.4230
IPD60R400CEAUMA1
DISTI # 2781171		Infineon Technologies AGMOSFET, N-CH, 600V, 14.7A, TO-2522199
  • 100:£0.6450
  • 10:£0.8390
  • 1:£0.9790
IPD60R400CEAUMA1
DISTI # 2781171		Infineon Technologies AGMOSFET, N-CH, 600V, 14.7A, TO-252
RoHS: Compliant		2505
  • 5000:$0.6670
  • 1000:$0.7030
  • 500:$0.7440
  • 250:$0.8600
  • 100:$1.0200
  • 25:$1.2600
  • 5:$1.4400
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Disponibilidad
Valores:
Available
En orden:
1993
Ingrese la cantidad:
El precio actual de IPD60R400CEAUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,08 US$
1,08 US$
10
0,92 US$
9,25 US$
100
0,71 US$
71,10 US$
500
0,63 US$
314,00 US$
1000
0,50 US$
496,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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