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SIE802DF-T1-E3

SIE802DF-T1-E3
Mfr. #:
SIE802DF-T1-E3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 60A 10-POLARPAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIE802DF-T1-E3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SIE802DF-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SIE802DF-E3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PolarPAK-10
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
5.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
20 ns 10 ns
Hora de levantarse
195 ns 20 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
42.7 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
1.9 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
45 ns 65 ns
Tiempo de retardo de encendido típico
45 ns 25 ns
Modo de canal
Mejora
Tags
SIE80, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0019 Ohms Surface Mount Power Mosfet - PolarPAK
***ical
Trans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R
***p One Stop Global
Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R
***C
Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK
***ponent Sense
TRANS N-CH 30V-TRANSISTOR FET N-CH
***i-Key
MOSFET N-CH 30V 60A 10-POLARPAK
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0026ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.2V ;RoHS Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:202A; Resistance, Rds On:0.0019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.2V; Case Style:PolarPAK; Termination Type:SMD; Base Number:802; Current, Idm Pulse:100A; N-channel Gate Charge:50nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0019ohm; Resistance, Rds on @ Vgs = 4.5V:0.0026ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:30V; Voltage, Vgs th Max:3.7V; Voltage, Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descripción Valores Precio
SIE802DF-T1-E3
DISTI # V72:2272_09215702		Vishay IntertechnologiesTrans MOSFET N-CH Si 30V 42.7A 10-Pin PolarPAK T/R
RoHS: Compliant		0
    SIE802DF-T1-E3
    DISTI # SIE802DF-T1-E3TR-ND    		Vishay SiliconixMOSFET N-CH 30V 60A 10-POLARPAK
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 3000:$1.8574
    SIE802DF-T1-E3
    DISTI # SIE802DF-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE802DF-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 18000:$1.6900
    • 30000:$1.6900
    • 6000:$1.7900
    • 12000:$1.7900
    • 3000:$1.8900
    SIE802DF-T1-E3
    DISTI # 781-SIE802DF-T1-E3    		Vishay IntertechnologiesMOSFET 30V 60A 125W 1.9mohm @ 10V
    RoHS: Compliant    		3000
    • 1:$3.7200
    • 10:$3.0800
    • 100:$2.5400
    • 250:$2.4600
    • 500:$2.2000
    • 1000:$1.8600
    • 3000:$1.7600
    SIE802DF-T1-E3Vishay Intertechnologies 1106
      SIE802DF-T1-E3Vishay Semiconductors42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET100
      • 11:$1.8000
      • 4:$2.4000
      • 1:$3.6000
      SIE802DF-T1-E3Vishay Siliconix42.7 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET19
      • 11:$1.8000
      • 4:$2.4000
      • 1:$3.6000
      SIE802DF-T1-E3Vishay IntertechnologiesMOSFET 30V 60A 125W 1.9mohm @ 10VAmericas -
        Imagen Parte # Descripción
        SIE802DF-T1-E3

        Mfr.#: SIE802DF-T1-E3

        OMO.#: OMO-SIE802DF-T1-E3

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        SIE802DF-T1-GE3

        Mfr.#: SIE802DF-T1-GE3

        OMO.#: OMO-SIE802DF-T1-GE3

        		 MOSFET 30V 202A 125W 1.9mohm @ 10V
        SIE802DF-T1-GE3

        Mfr.#: SIE802DF-T1-GE3

        OMO.#: OMO-SIE802DF-T1-GE3-VISHAY

        		 RF Bipolar Transistors MOSFET 30V 202A 125W 1.9mohm @ 10V
        SIE802DF-T1-E3

        Mfr.#: SIE802DF-T1-E3

        OMO.#: OMO-SIE802DF-T1-E3-VISHAY

        		 MOSFET N-CH 30V 60A 10-POLARPAK
        Disponibilidad
        Valores:
        Available
        En orden:
        2000
        Ingrese la cantidad:
        El precio actual de SIE802DF-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,64 US$
        2,64 US$
        10
        2,51 US$
        25,08 US$
        100
        2,38 US$
        237,60 US$
        500
        2,24 US$
        1 122,00 US$
        1000
        2,11 US$
        2 112,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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