FDMC7572S

FDMC7572S
Mfr. #:
FDMC7572S
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMC7572S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMC7572S más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-33-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
40 A
Rds On - Resistencia de la fuente de drenaje:
3.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.7 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
52 W
Configuración:
Único
Nombre comercial:
SyncFET
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
3.3 mm
Serie:
FDMC7572S
Tipo de transistor:
1 N-Channel
Ancho:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
122 S
Otoño:
3 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3.6 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
26 ns
Tiempo típico de retardo de encendido:
11 ns
Unidad de peso:
0.001133 oz
Tags
FDMC75, FDMC7, FDMC, FDM
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We guarantee 100% customer satisfaction.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 0.00315 ohm Surface Mount PowerTrench SyncFET Mosfet Power 33
*** Stop Electro
Power Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 0.0031 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
*** Source Electronics
MOSFET N-CH 30V 50A PPAK SO-8 / Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO EP T/R
***ment14 APAC
MOSFET, N-CH, 30V, 50A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
FDMx75x PowerTrench® MOSFETs & SyncFETs™
ON Semiconductor FDMx757x PowerTrench® MOSFETs and SyncFETs™ combine exceptional performance and high efficiency. The FDMC7570S and FDMC7572S PowerTrench SyncFETs are designed to minimize switching losses in power conversion applications. These SyncFETs offer low ON-resistance, maintain excellent switching performance, and add the benefit of an efficient monolithic Schottky body diode. The FDMS7578 and FDMS75780 MOSFETs improve the overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs are optimized for low gate charge, low on-resistance, fast switching speed, and body diode reverse recovery performance.
Parte # Mfg. Descripción Valores Precio
FDMC7572S
DISTI # 26637111
ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY18000
  • 3000:$0.9052
FDMC7572S
DISTI # 27073661
ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY3000
  • 3000:$1.0296
FDMC7572S
DISTI # 19272842
ON SemiconductorPT7 25V/20V NCH POWERTRENCH SY1818
  • 123:$0.5112
FDMC7572S
DISTI # FDMC7572SCT-ND
ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMC7572S
    DISTI # FDMC7572SDKR-ND
    ON SemiconductorMOSFET N-CH 25V 40A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMC7572S
      DISTI # FDMC7572STR-ND
      ON SemiconductorMOSFET N-CH 25V 40A POWER33
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$1.2028
      FDMC7572S
      DISTI # C1S541901390905
      ON SemiconductorTrans MOSFET N-CH Si 25V 22.5A 8-Pin Power 33 T/R
      RoHS: Compliant
      3000
      • 3000:$1.2200
      FDMC7572S
      DISTI # FDMC7572S
      ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC7572S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$1.0119
      • 6000:$1.0089
      • 12000:$1.0059
      • 18000:$1.0029
      • 30000:$0.9999
      FDMC7572S
      DISTI # FDMC7572S
      ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R (Alt: FDMC7572S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Asia - 0
        FDMC7572S
        DISTI # FDMC7572S
        ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R (Alt: FDMC7572S)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel
        Europe - 0
        • 3000:€1.4079
        • 6000:€1.1729
        • 12000:€1.0829
        • 18000:€1.0059
        • 30000:€0.9389
        FDMC7572S
        DISTI # 85W3144
        ON SemiconductorTrans MOSFET N-CH 25V 22.5A 8-Pin Power 33 T/R - Product that comes on tape, but is not reeled (Alt: 85W3144)
        RoHS: Compliant
        Min Qty: 1
        Container: Ammo Pack
        Americas - 0
        • 1:$1.1800
        FDMC7572S
        DISTI # 92R5534
        ON SemiconductorMOSFET Transistor, N Channel, 40 A, 25 V, 0.0025 ohm, 10 V, 1.7 V RoHS Compliant: Yes0
        • 1:$1.0800
        • 9000:$1.0400
        FDMC7572S
        DISTI # 85W3144
        ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52WRoHS Compliant: Yes1818
        • 1:$0.4090
        • 25:$0.4090
        • 50:$0.4090
        • 100:$0.4090
        • 250:$0.4090
        • 500:$0.4090
        • 1000:$0.4090
        FDMC7572SON SemiconductorN-Channel 25 V 0.00315 ohm Surface Mount PowerTrench SyncFET Mosfet Power 33
        RoHS: Compliant
        3000Reel
        • 3000:$1.1600
        FDMC7572SFairchild Semiconductor CorporationPower Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
        RoHS: Compliant
        49729
        • 1000:$1.1800
        • 500:$1.2500
        • 100:$1.3000
        • 25:$1.3500
        • 1:$1.4600
        FDMC7572S
        DISTI # 2459641
        ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A,
        RoHS: Compliant
        1818
        • 1:£2.1100
        • 25:£1.7900
        • 50:£1.6300
        • 100:£1.4400
        • 250:£1.3500
        FDMC7572S
        DISTI # XSFP00000096384
        Fairchild Semiconductor Corporation 
        RoHS: Compliant
        4038
        • 3000:$1.5500
        • 4038:$1.4500
        FDMC7572S
        DISTI # 2459641
        ON SemiconductorMOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8
        RoHS: Compliant
        1818
        • 3000:$3.2900
        Imagen Parte # Descripción
        FDMC010N08C

        Mfr.#: FDMC010N08C

        OMO.#: OMO-FDMC010N08C

        MOSFET PTNG 80/20V IN 51A 10 mOhm
        FDMC8321L

        Mfr.#: FDMC8321L

        OMO.#: OMO-FDMC8321L

        MOSFET 40V N-Channel PowerTrench MOSFET
        FDMC86340

        Mfr.#: FDMC86340

        OMO.#: OMO-FDMC86340

        MOSFET 80V N Chan Shielded Gate Power Trench
        FDMC86116LZ

        Mfr.#: FDMC86116LZ

        OMO.#: OMO-FDMC86116LZ

        MOSFET 100V/20V w/Zener NCH PowerTrench MOSFET
        FDMC86106LZ

        Mfr.#: FDMC86106LZ

        OMO.#: OMO-FDMC86106LZ

        MOSFET 100V N-Channel PowerTrench MOSFET
        FDMC8200S

        Mfr.#: FDMC8200S

        OMO.#: OMO-FDMC8200S

        MOSFET 30V Dual N-Channel PowerTrench MOSFET
        FDMC86570L

        Mfr.#: FDMC86570L

        OMO.#: OMO-FDMC86570L-ON-SEMICONDUCTOR

        MOSFET N-CH 60V 56A POWER33
        FDMC510P

        Mfr.#: FDMC510P

        OMO.#: OMO-FDMC510P-ON-SEMICONDUCTOR

        MOSFET P-CH 20V 18A 8-MLP
        FDMC8200

        Mfr.#: FDMC8200

        OMO.#: OMO-FDMC8200-ON-SEMICONDUCTOR

        MOSFET 2N-CH 30V 8A/12A POWER33
        FDMC8015L-CUT TAPE

        Mfr.#: FDMC8015L-CUT TAPE

        OMO.#: OMO-FDMC8015L-CUT-TAPE-1190

        Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        1984
        Ingrese la cantidad:
        El precio actual de FDMC7572S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,38 US$
        2,38 US$
        10
        2,02 US$
        20,20 US$
        100
        1,62 US$
        162,00 US$
        500
        1,41 US$
        705,00 US$
        1000
        1,17 US$
        1 170,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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