FDMA2002NZ

Mfr. #:: FDMA2002NZ
Fabricante:: ON Semiconductor / Fairchild
Descripción:: MOSFET 30V Dual N-Channel PowerTrench MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDMA2002NZ Ficha de datos
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Más información:: FDMA2002NZ más información

Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: MicroFET-6

Número de canales:: 2 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 30 V

Id - Corriente de drenaje continua:: 2.9 A

Rds On - Resistencia de la fuente de drenaje:: 75 mOhms

Vgs - Voltaje puerta-fuente:: 12 V

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 1.5 W

Configuración:: Doble

Modo de canal:: Mejora

Nombre comercial:: PowerTrench

Embalaje:: Carrete

Altura:: 0.75 mm

Longitud:: 2 mm

Producto:: Pequeña señal MOSFET

Serie:: FDMA2002NZ

Tipo de transistor:: 2 N-Channel

Escribe:: MOSFET

Ancho:: 2 mm

Marca:: ON Semiconductor / Fairchild

Otoño:: 8 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 8 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 12 ns

Tiempo típico de retardo de encendido:: 6 ns

Unidad de peso:: 0.001411 oz

Tags: FDMA20, FDMA2, FDMA, FDM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

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FDMA2002NZ Descripción

***Yang: Transistor MOSFET Array Dual N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench® MOSFET 30V, 2.9A, 123mΩ

***r Electronics: Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.9A; On Resistance, Rds(on):0.123ohm; Rds(on) Test Voltage, Vgs:1V; Threshold Voltage, Vgs Typ:12V ;RoHS Compliant: Yes

***rchild Semiconductor: This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

***nell: MOSFET, DUAL, N, MLP6; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:2.9A; Resistance, Rds On:0.123ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:MLP-6; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:10A; No. of Pins:8; Power Dissipation:1.5W; Power, Pd:1.5W; SMD Marking:002; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds Max:30V; Voltage, Vgs th N Channel 1 min:0.4V

***emi: Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

***ment14 APAC: MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.1Ohm;ID 3.2A;Micro6 (SOT-23);PD 1.7W;-55de

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS

***p One Stop: Trans MOSFET N-CH Si 30V 3.2A 6-Pin TSOP T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.2A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. Of Pins:6Pinsrohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: DC Switches; Load Switch

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.2 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 2 / Rise Time ns = 4.4 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 4.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TSOP6 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.7

***nell: MOSFET, N LOGIC MICRO-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.7W; Transistor Case Style: µSOIC; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Capacitance Ciss Typ: 210pF; Charge Qrr @ Tj = 25°C Typ: 39nC; Current Temperature: 25°C; External Depth: 3mm; External Length / Height: 1.45mm; External Width: 3mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; N-channel Gate Charge: 6.4nC; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 18A; Rate of Voltage Change dv / dt: 5V/ns; Reverse Recovery Time trr Typ: 36ns; SMD Marking: 2B; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vgs th Min: 1V

***ure Electronics: Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

***ineon SCT: 30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS

***et Europe: Transistor MOSFET Array Dual N-CH 30V 3.4A 6-Pin PQFN T/R

***p One Stop: Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch

***ment14 APAC: DUAL N CH, 30V, 3.6A, PQFN-6; Transistor; DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V

***ark: MOSFET Transistor, N Channel, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***ure Electronics: Single N-Channel 30 V 80 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23

*** Source Electronics: MOSFET N-CH 30V 3.4A SOT23 / Trans MOSFET N-CH 30V 3.4A 3-Pin SOT-23 T/R

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***nell: MOSFET,N CH,30V,3.3A,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.4A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V

*** Source Electronics: Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R / MOSFET N/P-CH 30V 6TSOP

***enic: 30V 2.5A 105m´Î@10V2.5A 1.15W 1V@250Ã×A 1PCSN-Channel&1PCSP-Channel TSOP-6 MOSFETs ROHS

***(Formerly Allied Electronics): MOSFET; Dual; Complementary; 30V; 2.5/1.8A; TSOP-6

***roFlash: Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Mosfet, N & P Channel, 30V, 2.5A, Tsop-6, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:surface Mountrohs Compliant: No

***nell: MOSFET, N & P-CH, 30V, 2.5A, TSOP; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.15W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

*** Source Electronics: MOSFET N/P-CH 30V 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R

***nell: DUAL N/P CHANNEL MOSFET, 30V, TSOP

***ark: Transistor; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Threshold Voltage, Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Package/Case:6-TSOP; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes

FDMA2002NZ Más información

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDMA2002NZ DISTI # V36:1790_06337795	ON Semiconductor	MLP6, 30V, 2.9A, DUAL, NCH POW	6000	45000:$0.1969 24000:$0.1988 9000:$0.2047 3000:$0.2146
FDMA2002NZ DISTI # V72:2272_06337795	ON Semiconductor	MLP6, 30V, 2.9A, DUAL, NCH POW	471	250:$0.2849 100:$0.3167 25:$0.4396 10:$0.5373 1:$0.6413
FDMA2002NZ DISTI # FDMA2002NZCT-ND	ON Semiconductor	MOSFET 2N-CH 30V 2.9A 6-MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20899In Stock	1000:$0.2751 500:$0.3439 100:$0.4351 10:$0.5670 1:$0.6400
FDMA2002NZ DISTI # FDMA2002NZDKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 2.9A 6-MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20899In Stock	1000:$0.2751 500:$0.3439 100:$0.4351 10:$0.5670 1:$0.6400
FDMA2002NZ DISTI # FDMA2002NZTR-ND	ON Semiconductor	MOSFET 2N-CH 30V 2.9A 6-MICROFET RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	30000:$0.2115 15000:$0.2170 6000:$0.2254 3000:$0.2421
FDMA2002NZ_F130 DISTI # FDMA2002NZ_F130-ND	ON Semiconductor	INTEGRATED CIRCUIT RoHS: Compliant Container: Bulk	Limited Supply - Call
FDMA2002NZ DISTI # 33688815	ON Semiconductor	MLP6, 30V, 2.9A, DUAL, NCH POW	354000	3000:$0.2146
FDMA2002NZ DISTI # 32528435	ON Semiconductor	MLP6, 30V, 2.9A, DUAL, NCH POW	9000	3000:$0.2122
FDMA2002NZ DISTI # 33128677	ON Semiconductor	MLP6, 30V, 2.9A, DUAL, NCH POW	6000	3000:$0.2146
FDMA2002NZ DISTI # 30208331	ON Semiconductor	MLP6, 30V, 2.9A, DUAL, NCH POW	471	32:$0.6413
FDMA2002NZ DISTI # FDMA2002NZ	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDMA2002NZ) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 18000	30000:€0.1969 18000:€0.2119 12000:€0.2299 6000:€0.2509 3000:€0.3069
FDMA2002NZ DISTI # FDMA2002NZ	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDMA2002NZ) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1959 18000:$0.2009 12000:$0.2029 6000:$0.2059 3000:$0.2069
FDMA2002NZ DISTI # FDMA2002NZ	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Bulk (Alt: FDMA2002NZ) Min Qty: 1389 Container: Bulk	Americas - 0	13890:$0.2219 6945:$0.2269 4167:$0.2299 2778:$0.2329 1389:$0.2349
FDMA2002NZ DISTI # FDMA2002NZ	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDMA2002NZ) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.2607 75000:$0.2650 30000:$0.2741 15000:$0.2839 9000:$0.2944 6000:$0.3058 3000:$0.3180
FDMA2002NZ DISTI # 76M7880	ON Semiconductor	DUAL N MOSFET 30V 2.9A MICROFET 2X2,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.123ohm,Rds(on) Test Voltage Vgs:1V,Threshold Voltage Vgs:12V RoHS Compliant: Yes	0	1000:$0.2670 500:$0.2880 250:$0.3090 100:$0.3300 50:$0.4180 25:$0.5050 1:$0.6120
FDMA2002NZ DISTI # 20M1166	ON Semiconductor	TRANSISTOR ARRAY, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Product Range:-RoHS Compliant: Yes	0	24000:$0.2110 9000:$0.2190 1:$0.2270
FDMA2002NZ DISTI # 512-FDMA2002NZ	ON Semiconductor	MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS: Compliant	48260	1:$0.5900 10:$0.4930 100:$0.3180 1000:$0.2550 3000:$0.2150 9000:$0.2070 24000:$0.1990
FDMA2002NZ	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC RoHS: Compliant	93000	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
FDMA2002NZ	Fairchild Semiconductor Corporation	2900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC	70	45:$0.3000 9:$0.4500 1:$0.6000
FDMA2002NZ DISTI # 1324793	ON Semiconductor	RoHS: Compliant	0	9000:$0.3190 3000:$0.3310 1000:$0.3920 100:$0.4890 10:$0.7580 1:$0.9070

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Disponibilidad

Valores:: 47
En orden:: 2030
Ingrese la cantidad:

El precio actual de FDMA2002NZ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,59 US$~~; ~~0,59 US$~~

10: ~~0,49 US$~~; ~~4,93 US$~~

100: ~~0,32 US$~~; ~~31,80 US$~~

1000: ~~0,26 US$~~; ~~255,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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FDMA2002NZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes