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IRF250P224

IRF250P224
Mfr. #:
IRF250P224
Fabricante:
Infineon Technologies
Descripción:
MOSFET IFX OPTIMOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF250P224 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRF250P224 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247AC-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
250 V
Id - Corriente de drenaje continua:
96 A
Rds On - Resistencia de la fuente de drenaje:
12 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
203 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
313 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
Fuerte IRFET
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
112 S
Otoño:
58 ns
Tipo de producto:
MOSFET
Hora de levantarse:
70 ns
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
77 ns
Tiempo típico de retardo de encendido:
25 ns
Parte # Alias:
SP001582438
Unidad de peso:
0.211644 oz
Tags
IRF250, IRF25, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 250 V 12 mOhm 135 nC StrongIRFET™ IR Mosfet - TO-247AC
***ical
Trans MOSFET N-CH 250V 128A 3-Pin(3+Tab) TO-247AC Tube
***et Europe
Trans MOSFET N-CH 250V 96A 3TO-247AC
***i-Key
MOSFET N-CH 250V 96A TO247AC
***ark
Mosfet, N-Ch, 250V, 128A, 556W, To-247Ac; Transistor Polarity:n Channel; Continuous Drain Current Id:128A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.009Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
Target Applications: UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 250V, 128A, 556W, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:128A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:556W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 250V, 128A, 556W, TO-247AC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:128A; Tensione Drain Source Vds:250V; Resistenza di Attivazione Rds(on):0.009ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:556W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:StrongIRFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descripción Valores Precio
IRF250P224
DISTI # V99:2348_17072165		Infineon Technologies AGIR MOSFET - StrongIRFET¿212
  • 250:$9.4070
  • 100:$9.9060
  • 25:$11.0840
  • 10:$11.5920
  • 1:$12.5200
IRF250P224
DISTI # IRF250P224-ND		Infineon Technologies AGMOSFET N-CH 250V 96A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		368In Stock
  • 400:$11.6359
  • 10:$15.0140
  • 1:$16.5200
IRF250P224
DISTI # 29721879		Infineon Technologies AGIR MOSFET - StrongIRFET¿212
  • 100:$9.9060
  • 25:$11.0840
  • 10:$11.5920
  • 1:$12.5200
IRF250P224
DISTI # 26393585		Infineon Technologies AGIR MOSFET - StrongIRFET¿44
  • 250:$10.1568
  • 100:$10.6848
  • 25:$12.1248
  • 10:$12.6528
  • 2:$13.7568
IRF250P224
DISTI # 30611032		Infineon Technologies AGIR MOSFET - StrongIRFET¿10
  • 10:$13.0050
  • 5:$13.8975
  • 2:$16.7025
IRF250P224
DISTI # IRF250P224		Infineon Technologies AGTrans MOSFET N-CH 250V 96A 3TO-247AC (Alt: IRF250P224)
RoHS: Compliant
Min Qty: 400		Asia - 0
    IRF250P224
    DISTI # IRF250P224    		Infineon Technologies AGTrans MOSFET N-CH 250V 96A 3TO-247AC - Rail/Tube (Alt: IRF250P224)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube    		Americas - 0
    • 400:$7.7900
    • 800:$7.4900
    • 1600:$7.2900
    • 2400:$6.9900
    • 4000:$6.8900
    IRF250P224
    DISTI # 726-IRF250P224    		Infineon Technologies AGMOSFET IFX OPTIMOS
    RoHS: Compliant    		484
    • 1:$14.3300
    • 10:$13.1800
    • 25:$12.6300
    • 100:$11.1300
    • 250:$10.5800
    IRF250P224
    DISTI # IRF250P224    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,250V,68A,313W,TO247AC5
    • 1:$15.2700
    • 3:$13.7700
    • 10:$12.1700
    • 25:$10.9400
    IRF250P224
    DISTI # C1S322000671490    		Infineon Technologies AGIR MOSFET - StrongIRFET10
    • 10:$10.2000
    • 5:$10.9000
    • 1:$13.1000
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    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de IRF250P224 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    8,62 US$
    8,62 US$
    10
    7,79 US$
    77,90 US$
    25
    7,43 US$
    185,75 US$
    100
    6,45 US$
    645,00 US$
    250
    6,16 US$
    1 540,00 US$
    500
    5,61 US$
    2 805,00 US$
    1000
    5,18 US$
    5 180,00 US$
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