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SI1012X-T1-GE3

SI1012X-T1-GE3
Mfr. #:
SI1012X-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI1012X-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1012X-T1-GE3 DatasheetSI1012X-T1-GE3 Datasheet (P4-P6)SI1012X-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SC-89-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Id - Corriente de drenaje continua:
600 mA
Rds On - Resistencia de la fuente de drenaje:
700 mOhms
Vgs th - Voltaje umbral puerta-fuente:
450 mV
Vgs - Voltaje puerta-fuente:
4.5 V
Qg - Carga de puerta:
750 pC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
275 mW
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
1.6 mm
Serie:
SI1
Tipo de transistor:
1 N Channel
Ancho:
0.85 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
1 S
Otoño:
11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
5 ns
Parte # Alias:
SI1012X-GE3
Unidad de peso:
0.001058 oz
Tags
SI1012X-T1, SI1012X-T, SI1012X, SI1012, SI101, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ohm; ID 500mA; SC-89 (SOT-490); Halogeenfree
***ure Electronics
Single N-Channel 20 V 0.7 Ohm Surface Mount Power Mosfet - SC-89
***ment14 APAC
N CHANNEL MOSFET, 20V, 500mA, SC-89; Tra; N CHANNEL MOSFET, 20V, 500mA, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):700mohm; Rds(on) Test Voltage Vgs:6V; Threshold Voltage Vgs:900mV
Parte # Mfg. Descripción Valores Precio
SI1012X-T1-GE3
DISTI # V72:2272_09215334		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant		994
  • 500:$0.2064
  • 250:$0.2641
  • 100:$0.2717
  • 10:$0.4198
  • 1:$0.5414
SI1012X-T1-GE3
DISTI # V36:1790_09215334		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant		0
  • 3000:$0.1500
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		51552In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		51552In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		48000In Stock
  • 75000:$0.1075
  • 30000:$0.1117
  • 15000:$0.1218
  • 6000:$0.1302
  • 3000:$0.1386
SI1012X-T1-GE3
DISTI # 25789785		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R
RoHS: Compliant		994
  • 42:$0.5414
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1299
  • 18000:€0.1389
  • 12000:€0.1509
  • 6000:€0.1749
  • 3000:€0.2569
SI1012X-T1-GE3
DISTI # SI1012X-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R (Alt: SI1012X-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI1012X-T1-GE3
    DISTI # SI1012X-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R - Tape and Reel (Alt: SI1012X-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1209
    • 18000:$0.1239
    • 12000:$0.1269
    • 6000:$0.1329
    • 3000:$0.1369
    SI1012X-T1-GE3
    DISTI # 16P3669    		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 500mA, SC-89,Transistor Polarity:N Channel,Continuous Drain Current Id:600mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV RoHS Compliant: Yes0
    • 1000:$0.1840
    • 500:$0.2370
    • 250:$0.2630
    • 100:$0.2890
    • 50:$0.3390
    • 25:$0.3900
    • 1:$0.5050
    SI1012X-T1-GE3.
    DISTI # 26AC3307    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:500mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:900mV,Power Dissipation Pd:250mW,No. of Pins:3Pins RoHS Compliant: No0
    • 30000:$0.1240
    • 18000:$0.1280
    • 12000:$0.1310
    • 6000:$0.1370
    • 1:$0.1410
    SI1012X-T1-GE3
    DISTI # 70026402    		Vishay SiliconixMOSFET,Power,N-Ch,VDSS 20V,RDS(ON) 0.41Ohm,ID 500mA,SC-89 (SOT-490),Halogeenfree
    RoHS: Compliant    		0
    • 3000:$0.2200
    • 6000:$0.2030
    • 12000:$0.1950
    SI1012X-T1-GE3
    DISTI # 781-SI1012X-T1-GE3    		Vishay IntertechnologiesMOSFET 20V 0.6A 175mW 700mohm @ 4.5V
    RoHS: Compliant    		3158
    • 1:$0.5000
    • 10:$0.3860
    • 100:$0.2860
    • 500:$0.2350
    • 1000:$0.1820
    • 3000:$0.1660
    • 6000:$0.1550
    • 9000:$0.1450
    • 24000:$0.1370
    SI1012XT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		3000
      SI1012X-T1-GE3
      DISTI # 1690182      		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 500mA, SC-89
      RoHS: Compliant      		0
      • 1000:$0.2350
      • 500:$0.3130
      • 20:$0.4180
      SI1012X-T1-GE3Vishay IntertechnologiesMOSFET 20V 0.6A 175mW 700mohm @ 4.5V
      RoHS: Compliant      		Americas - 6000
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        Disponibilidad
        Valores:
        Available
        En orden:
        1986
        Ingrese la cantidad:
        El precio actual de SI1012X-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,50 US$
        0,50 US$
        10
        0,39 US$
        3,86 US$
        100
        0,29 US$
        28,60 US$
        500
        0,24 US$
        117,50 US$
        1000
        0,18 US$
        182,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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