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SIHS36N50D-E3

SIHS36N50D-E3
Mfr. #:
SIHS36N50D-E3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 500V 130mOhm@10V 36A N-Ch D-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHS36N50D-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHS36N50D-E3 más información
Atributo del producto
Valor de atributo
Tags
SIHS3, SIHS, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 500V, 36A, SUPER-247; Transistor Polarity:N Channel; Continuous Dr
***Components
N-Channel MOSFET, 36 A, 500 V, 3-Pin Super-247 Vishay SiHS36N50D-E3
***et Europe
Trans MOSFET N-CH 500V 36A 3-Pin(3+Tab) Super-247
***et
Trans MOSFET N-CH 500V 36A 3-Pin Super-247
***ical
Trans MOSFET N-CH 500V 36A
***i-Key
MOSFET N-CH 500V 36A SUPER-247
***ment14 APAC
MOSFET, N-CH, 500V, 36A, SUPER-247; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:446W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-274AA; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Parte # Mfg. Descripción Valores Precio
SIHS36N50D-E3
DISTI # SIHS36N50D-E3-ND		Vishay SiliconixMOSFET N-CH 500V 36A SUPER-247
RoHS: Compliant
Min Qty: 1
Container: Tube		485In Stock
  • 1000:$4.1516
  • 500:$4.7667
  • 100:$5.6892
  • 10:$6.9190
  • 1:$7.6900
SIHS36N50D-E3
DISTI # SIHS36N50D-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 36A 3-Pin(3+Tab) Super-247 - Tape and Reel (Alt: SIHS36N50D-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$3.9900
  • 1000:$3.8900
  • 2000:$3.6900
  • 3000:$3.5900
  • 5000:$3.4900
SIHS36N50D-E3
DISTI # 63W4117		Vishay IntertechnologiesMOSFET Transistor, N Channel, 36 A, 500 V, 0.105 ohm, 10 V, 3 V RoHS Compliant: Yes414
  • 1:$6.9900
  • 10:$6.3000
  • 25:$5.7400
  • 50:$5.4600
  • 100:$5.1800
  • 250:$4.7600
  • 500:$4.3400
SIHS36N50D-E3
DISTI # 78-SIHS36N50D-E3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs Super-247
RoHS: Compliant		484
  • 1:$6.9900
  • 10:$6.3000
  • 25:$5.7400
  • 100:$5.1800
  • 250:$4.7600
  • 500:$4.3400
  • 1000:$3.7800
SIHS36N50D-E3
DISTI # 7879200		Vishay IntertechnologiesMOSFET N-CH 500V 36A LOW CAP. SUPER247, EA41
  • 1:£5.5500
  • 10:£4.5500
  • 50:£4.1700
  • 100:£3.8900
  • 200:£3.6100
SIHS36N50D-E3
DISTI # 7879200P		Vishay IntertechnologiesMOSFET N-CH 500V 36A LOW CAP. SUPER247, RL64
  • 10:£4.5500
  • 50:£4.1700
  • 100:£3.8900
  • 200:£3.6100
SIHS36N50DE3Vishay IntertechnologiesPower Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA
RoHS: Compliant		Europe - 400
    SIHS36N50D-E3
    DISTI # 2283628    		Vishay IntertechnologiesMOSFET, N-CH, 500V, 36A, SUPER-247
    RoHS: Compliant    		414
    • 1:$11.0600
    • 10:$9.9700
    • 25:$9.0900
    • 100:$8.2100
    • 250:$7.5300
    • 500:$6.8700
    • 1000:$5.9900
    • 2500:$5.7700
    SIHS36N50D-E3
    DISTI # 2283628    		Vishay IntertechnologiesMOSFET, N-CH, 500V, 36A, SUPER-247
    RoHS: Compliant    		449
    • 1:£5.5300
    • 5:£5.4000
    • 10:£4.4300
    • 50:£4.2200
    • 100:£4.0000
    Imagen Parte # Descripción
    SIHS36N50D-E3

    Mfr.#: SIHS36N50D-E3

    OMO.#: OMO-SIHS36N50D-E3

    		 MOSFET 500V Vds 30V Vgs Super-247
    SIHS36N50D-E3

    Mfr.#: SIHS36N50D-E3

    OMO.#: OMO-SIHS36N50D-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 500V 130mOhm@10V 36A N-Ch D-SRS
    SIHS36N50D

    Mfr.#: SIHS36N50D

    OMO.#: OMO-SIHS36N50D-1190

    		 Nuevo y original
    SIHS36N50DE3

    Mfr.#: SIHS36N50DE3

    OMO.#: OMO-SIHS36N50DE3-1190

    		 Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de SIHS36N50D-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,24 US$
    5,24 US$
    10
    4,97 US$
    49,73 US$
    100
    4,71 US$
    471,15 US$
    500
    4,45 US$
    2 224,90 US$
    1000
    4,19 US$
    4 188,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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