IXTQ110N10P

IXTQ110N10P
Mfr. #:
IXTQ110N10P
Fabricante:
Littelfuse
Descripción:
IGBT Transistors MOSFET 110 Amps 100V 0.015 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTQ110N10P Ficha de datos
Entrega:
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ECAD Model:
Más información:
IXTQ110N10P más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
IXTQ110N10
embalaje
Tubo
Unidad de peso
0.194007 oz
Estilo de montaje
A través del orificio
Nombre comercial
PolarHT
Paquete-Estuche
TO-3P-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
480 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
25 ns
Hora de levantarse
25 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
110 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Resistencia a la fuente de desagüe de Rds
15 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
65 ns
Tiempo de retardo de encendido típico
21 ns
Qg-Gate-Charge
110 nC
Transconductancia directa-Mín.
30 S
Modo de canal
Mejora
Tags
IXTQ11, IXTQ1, IXTQ, IXT
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-3P
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: TO-3P Polarity: N Variants: Enhancement mode Power dissipation: 480 W
***i-Key
MOSFET N-CH 100V 110A TO-3P
***ark
MOSFET, N, TO-3P; Transistor type:Standard; Voltage, Vds typ:100V; Current, Id cont:110A; Resistance, Rds on:0.015R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-3P; Capacitance, Ciss typ:3550pF; Charge, RoHS Compliant: Yes
***nell
MOSFET, N, TO-3P; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:110A; Resistance, Rds On:0.015ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination Type:Through Hole; Capacitance, Ciss Typ:3550pF; Charge, Gate N-channel:110nC; Pins, No. of:3; Power, Pd:480W; Thermal Resistance, Junction to Case A:0.31°C/W; Voltage, Vds Max:100V; Time, trr Max:130ns
Electrical Vehicle AC Chargers
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Parte # Mfg. Descripción Valores Precio
IXTQ110N10P
DISTI # V36:1790_15876282
IXYS CorporationTrans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-3P
RoHS: Compliant
0
    IXTQ110N10P
    DISTI # IXTQ110N10P-ND
    IXYS CorporationMOSFET N-CH 100V 110A TO-3P
    RoHS: Compliant
    Min Qty: 30
    Container: Tube
    Temporarily Out of Stock
    • 30:$4.4100
    IXTQ110N10P
    DISTI # 747-IXTQ110N10P
    IXYS CorporationMOSFET 110 Amps 100V 0.015 Rds
    RoHS: Compliant
    31
    • 1:$6.3000
    • 10:$5.6300
    • 25:$4.9000
    • 50:$4.8000
    • 100:$4.6200
    • 250:$3.9500
    • 500:$3.7400
    • 1000:$3.1600
    • 2500:$2.7100
    IXTQ110N10P
    DISTI # IXTQ110N10P
    IXYS CorporationTransistor: N-MOSFET,PolarHT™,unipolar,100V,110A,480W,TO3P22
    • 1:$4.1800
    • 3:$3.9000
    • 10:$3.6200
    • 30:$3.4900
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    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IXTQ110N10P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,06 US$
    4,06 US$
    10
    3,86 US$
    38,62 US$
    100
    3,66 US$
    365,85 US$
    500
    3,46 US$
    1 727,65 US$
    1000
    3,25 US$
    3 252,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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