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BC858B-7-F

BC858B-7-F
Mfr. #:
BC858B-7-F
Fabricante:
Diodes Incorporated
Descripción:
Bipolar Transistors - BJT PNP BIPOLAR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BC858B-7-F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Polaridad del transistor:
PNP
Configuración:
Único
Voltaje colector-emisor VCEO Max:
- 30 V
Colector- Voltaje base VCBO:
- 30 V
Emisor- Voltaje base VEBO:
- 5 V
Voltaje de saturación colector-emisor:
- 650 mV
Corriente máxima del colector de CC:
- 200 mA
Producto de ganancia de ancho de banda fT:
200 MHz
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
BC858
Altura:
1 mm
Longitud:
3.05 mm
Embalaje:
Carrete
Ancho:
1.4 mm
Marca:
Diodos incorporados
Colector de CC / Ganancia base hfe Min:
220 at -2 mA, - 5 V
Pd - Disipación de energía:
300 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Unidad de peso:
0.000282 oz
Tags
BC858B-7, BC858B, BC858, BC85, BC8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BC858B Series 30 V 200 mA Surface Mount PNP Small Signal Transistor - SOT-23
***ical
Trans GP BJT PNP 30V 0.1A 350mW 3-Pin SOT-23 T/R
***ment14 APAC
Transistor, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW;
***ark
TRANSISTOR, PNP, -30V, -100mA, 300mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:100mA; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
***nell
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 330hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
***et Europe
Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R
***el Electronic
Bipolar Transistors - BJT PNP BIPOLAR
***ark
Trans, Pnp, 30V, 0.1A, 150Deg C, 0.35W Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
***el Electronic
Bipolar Transistors - BJT SOT-23 PNP GP AMP
***Yang
Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
***ure Electronics
BC858C Series 30 V 100 mA Surface Mount PNP Small Signal Transistor - SOT23
***ical
Trans GP BJT PNP 30V 0.1A 350mW 3-Pin SOT-23 T/R
***et
BIPOLAR TRANSISTOR PNP SOT-23 ROHS 3K
***el Electronic
Bipolar Transistors - BJT PNP BIPOLAR
***(Formerly Allied Electronics)
PNP Small Signal Transistor SOT-23
***ment14 APAC
Transistor, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW;
***ark
TRANSISTOR, PNP, -30V, -100mA, 300mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:100mA; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
***nell
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 600hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 420; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
***ure Electronics
BC858 Series 30 V 100 mA Surface Mount PNP Epitaxial Transistor - SOT-23
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
***Yang
Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
***ure Electronics
PNP 350 mW 30 V 1.2 A Surface Mount Darlington Transistor - SOT-23-3
***r Electronics
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
***fin
Transistor PNP Darlington BCV26 FAIRCHILD Ampere=1.2 V=30 SOt23
***th Star Micro
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
***ment14 APAC
TRANS, DARL, 30V, 1.2A, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:350mW; DC Collector Current:1.2A; DC Current Gain hFE:20000; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:1.2A; Current Ic Continuous a Max:1.2A; Current Ic hFE:100mA; Device Marking:BCV26; Gain Bandwidth ft Typ:220MHz; Hfe Min:20000; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:FD; Termination Type:SMD; Voltage Vcbo:40V
***et
Bipolar (BJT) Transistor PNP 25V 200mA 250MHz 350mW Surface Mount SOT-23-3
*** Electronic Components
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
***or
TRANS PNP 25V 200MA SOT23-3
Parte # Mfg. Descripción Valores Precio
BC858B-7-F
DISTI # BC858B-7-F-ND		Diodes IncorporatedTRANS PNP 30V 0.1A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.0391
BC858B-7-F
DISTI # BC858B-7-F		Diodes IncorporatedTrans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R (Alt: BC858B-7-F)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.0277
  • 6000:€0.0277
  • 12000:€0.0276
  • 18000:€0.0275
  • 30000:€0.0274
BC858B-7-F
DISTI # BC858B-7-F		Diodes IncorporatedTrans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BC858B-7-F)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0113
  • 6000:$0.0108
  • 12000:$0.0103
  • 18000:$0.0098
  • 30000:$0.0096
BC858B-7-F
DISTI # 51R6408		Diodes IncorporatedTRANSISTOR, PNP, -30V, -100mA, 300mW, SOT-23,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:-30V,Transition Frequency ft:200MHz,Power Dissipation Pd:300mW,DC Collector Current:-100mA,DC Current Gain hFE:330hFE , RoHS Compliant: Yes1683
  • 1:$0.2280
  • 10:$0.1500
  • 25:$0.1210
  • 50:$0.0920
  • 100:$0.0640
  • 250:$0.0580
  • 500:$0.0460
  • 1000:$0.0340
BC858B-7-F
DISTI # 70550413		Diodes IncorporatedPNP Small Signal Transistor SOT-23
RoHS: Compliant		0
  • 1250:$0.0280
  • 2500:$0.0200
  • 3750:$0.0180
  • 7500:$0.0160
BC858B-7-F
DISTI # 621-BC858B-7-F		Diodes IncorporatedBipolar Transistors - BJT PNP BIPOLAR
RoHS: Compliant		7443
  • 1:$0.2200
  • 10:$0.1440
  • 100:$0.0600
  • 1000:$0.0410
  • 3000:$0.0320
BC858B-7-F
DISTI # 8228990		Zetex / Diodes IncPNP SMALL SIGNAL TRANSISTOR SOT-23, PK7500
  • 250:£0.0480
  • 1250:£0.0310
  • 2500:£0.0270
  • 3750:£0.0240
  • 7500:£0.0220
BC858B-7-F
DISTI # BC858B-7-F		Diodes IncorporatedTransistor: PNP,bipolar,30V,100mA,350mW,SOT233540
  • 20:$0.0318
  • 100:$0.0191
  • 500:$0.0172
  • 3000:$0.0152
  • 12000:$0.0137
BC858B-7-F
DISTI # TDSTD7473		Diodes IncorporatedPNP TRANS 30V 0,1ASOT23Stock DE - 3000Stock US - 0
  • 3000:$0.0221
  • 6000:$0.0206
  • 12000:$0.0196
  • 21000:$0.0177
  • 39000:$0.0163
BC858B-7-F
DISTI # 1773610		Diodes IncorporatedTRANSISTOR, PNP, SOT23
RoHS: Compliant		1683
  • 1:$0.3490
  • 10:$0.2280
  • 100:$0.0950
  • 1000:$0.0660
  • 3000:$0.0510
  • 9000:$0.0450
  • 24000:$0.0410
  • 45000:$0.0380
BC858B-7-F
DISTI # 1773610		Diodes IncorporatedTRANSISTOR, PNP, SOT23
RoHS: Compliant		2287
  • 5:£0.1300
  • 25:£0.1270
  • 100:£0.0517
  • 250:£0.0486
  • 500:£0.0468
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Disponibilidad
Valores:
Available
En orden:
1990
Ingrese la cantidad:
El precio actual de BC858B-7-F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,21 US$
0,21 US$
10
0,14 US$
1,44 US$
100
0,06 US$
6,00 US$
1000
0,04 US$
41,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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