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CSD17305Q5A

CSD17305Q5A
Mfr. #:
CSD17305Q5A
Descripción:
MOSFET 30V N Channel NexFET Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD17305Q5A Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
CSD17305Q5A más información CSD17305Q5A Product Details
Atributo del producto
Valor de atributo
Fabricante:
Instrumentos Texas
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
VSONP-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
2.8 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.1 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
14.1 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.1 W
Configuración:
Único
Nombre comercial:
NexFET
Embalaje:
Carrete
Altura:
1 mm
Longitud:
6 mm
Serie:
CSD17305Q5A
Tipo de transistor:
1 N-Channel
Ancho:
4.9 mm
Marca:
Instrumentos Texas
Transconductancia directa - Mín .:
139 S
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
8.9 ns
Tags
CSD1730, CSD173, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***o
    T***o
    ZW

    Am happy with product and service

    2019-05-29
    E**c
    E**c
    BR

    The terminals came soldered

    2019-05-06
    A***i
    A***i
    IN

    Received broken opened parcel from post.

    2019-05-22
    U***u
    U***u
    BY

    Everything is fine.

    2019-02-10
***as Instruments
30V, N ch NexFET MOSFET™, single SON5x6, 3.6mOhm 8-VSONP -55 to 150
***ical
Trans MOSFET N-CH 30V 29A 8-Pin VSONP EP T/R
***p One Stop Global
Trans MOSFET N-CH 30V 29A 8-Pin SON EP T/R
***ark
Transistor, Full Reel
***i-Key
MOSFET N-CH 30V 100A 8SON
***th Star Micro
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.
***nell
MOSFET, N CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Current Id Max:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:8V; Voltage Vgs Max:10V; Power Dissipation:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (18-Jun-2010)
***ment14 APAC
MOSFET, N CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:3.1W; Voltage Vgs Max:10V
***as Instruments Inc.
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descripción Valores Precio
CSD17305Q5A
DISTI # 296-25855-1-ND		MOSFET N-CH 30V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		397In Stock
  • 1000:$0.7631
  • 500:$0.9666
  • 100:$1.2464
  • 10:$1.5770
  • 1:$1.7800
CSD17305Q5A
DISTI # 296-25855-6-ND		MOSFET N-CH 30V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		397In Stock
  • 1000:$0.7631
  • 500:$0.9666
  • 100:$1.2464
  • 10:$1.5770
  • 1:$1.7800
CSD17305Q5A
DISTI # 296-25855-2-ND		MOSFET N-CH 30V 100A 8SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.6569
  • 2500:$0.6915
CSD17305Q5A
DISTI # CSD17305Q5A		Trans MOSFET N-CH 30V 29A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17305Q5A)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.6509
  • 5000:$0.6199
  • 10000:$0.5989
  • 15000:$0.5789
  • 25000:$0.5629
CSD17305Q5A30V N Channel NexFET™ Power MOSFET4770
  • 1000:$0.5100
  • 750:$0.5700
  • 500:$0.7100
  • 250:$0.8800
  • 100:$0.9500
  • 25:$1.1100
  • 10:$1.2000
  • 1:$1.3400
CSD17305Q5A
DISTI # 595-CSD17305Q5A		MOSFET 30V N Channel NexFET Power MOSFET
RoHS: Compliant		2067
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9660
  • 500:$0.8540
  • 1000:$0.6740
  • 2500:$0.5980
CSD17305Q5APower Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		2431
  • 1000:$0.6600
  • 500:$0.7000
  • 100:$0.7300
  • 25:$0.7600
  • 1:$0.8100
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Mfr.#: MR25H40MDF

OMO.#: OMO-MR25H40MDF

 NVRAM 4Mb 3.3V 512Kx8 SPI
LT1785AIS8#PBF

Mfr.#: LT1785AIS8#PBF

OMO.#: OMO-LT1785AIS8-PBF

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1N4148W-7-F

Mfr.#: 1N4148W-7-F

OMO.#: OMO-1N4148W-7-F

 Diodes - General Purpose, Power, Switching SURFACE MOUNT FAST SWITCHING DIODE
SN74LVC1G125DBVR

Mfr.#: SN74LVC1G125DBVR

OMO.#: OMO-SN74LVC1G125DBVR

 Buffers & Line Drivers SINGLE BUS BUFFER GATE
LM4040C25IDBZR

Mfr.#: LM4040C25IDBZR

OMO.#: OMO-LM4040C25IDBZR

 Voltage References 2.5-V Precision Mcrpwr Shunt .5% acc
TL1963A-33DCYR

Mfr.#: TL1963A-33DCYR

OMO.#: OMO-TL1963A-33DCYR

 LDO Voltage Regulators 1.5A Lo-Noise Fast- Trans-Resp LDO Reg
TPS51200EVM

Mfr.#: TPS51200EVM

OMO.#: OMO-TPS51200EVM

 Power Management IC Development Tools TPS51200 Sink Source DDR Term Reg
35SVPF120M

Mfr.#: 35SVPF120M

OMO.#: OMO-35SVPF120M

 Aluminum Organic Polymer Capacitors 35 V 120uF ESR 18mohm
M22-6540242R

Mfr.#: M22-6540242R

OMO.#: OMO-M22-6540242R

 Headers & Wire Housings 2 WAY SIL HORIZ SMT SKT T&R
MR25H40MDF

Mfr.#: MR25H40MDF

OMO.#: OMO-MR25H40MDF-EVERSPIN-TECHNOLOGIES

 NVRAM 4Mb 3.3V 512Kx8 SPI
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de CSD17305Q5A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,47 US$
1,47 US$
10
1,26 US$
12,60 US$
100
0,97 US$
96,60 US$
500
0,85 US$
427,00 US$
1000
0,67 US$
674,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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