NTJD1155LT1G

NTJD1155LT1G
Mfr. #:
NTJD1155LT1G
Fabricante:
ON Semiconductor
Descripción:
MOSFET 8V +/-1.3A P-Channel w/Level Shift
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTJD1155LT1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTJD1155LT1G DatasheetNTJD1155LT1G Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SC-88-6
Número de canales:
2 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
8 V
Id - Corriente de drenaje continua:
1.3 A
Rds On - Resistencia de la fuente de drenaje:
175 mOhms
Vgs th - Voltaje umbral puerta-fuente:
400 mV
Vgs - Voltaje puerta-fuente:
4.5 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
400 mW
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.9 mm
Longitud:
2 mm
Producto:
Pequeña señal MOSFET
Serie:
NTJD1155L
Tipo de transistor:
2 P-Channel
Escribe:
MOSFET
Ancho:
1.25 mm
Marca:
EN Semiconductor
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.001093 oz
Tags
NTJD1155LT1G, NTJD1155L, NTJD1, NTJD, NTJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
NTJD1155LT1G Dual N/P-channel MOSFET Transistor; 1.3 A; 8 V; 6-Pin SC-88
***Semiconductor
Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ
***ure Electronics
P-Channel 8 V 130 mOhm 400 mW Surface Mount Power MOSFET - SOT-363
***ark
P Channel Mosfet, -8V, Sc-88, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:1.3A; On Resistance Rds(On):0.13Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
NTJD1155LT1G
DISTI # NTJD1155LT1GOSCT-ND
ON SemiconductorMOSFET N/P-CH 8V 1.3A SOT-363
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
16940In Stock
  • 1000:$0.1436
  • 500:$0.1905
  • 100:$0.2764
  • 10:$0.4020
  • 1:$0.5100
NTJD1155LT1G
DISTI # NTJD1155LT1GOSDKR-ND
ON SemiconductorMOSFET N/P-CH 8V 1.3A SOT-363
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
16940In Stock
  • 1000:$0.1436
  • 500:$0.1905
  • 100:$0.2764
  • 10:$0.4020
  • 1:$0.5100
NTJD1155LT1G
DISTI # NTJD1155LT1GOSTR-ND
ON SemiconductorMOSFET N/P-CH 8V 1.3A SOT-363
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
12000In Stock
  • 3000:$0.1280
NTJD1155LT1G
DISTI # NTJD1155LT1G
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin SC-88 T/R (Alt: NTJD1155LT1G)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.0909
  • 6000:€0.0879
  • 12000:€0.0859
  • 18000:€0.0859
  • 30000:€0.0859
NTJD1155LT1G
DISTI # NTJD1155LT1G
ON SemiconductorTrans MOSFET N/P-CH 8V 6-Pin SC-88 T/R (Alt: NTJD1155LT1G)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
  • 6000:$0.1189
  • 12000:$0.1144
  • 18000:$0.1101
  • 30000:$0.1062
  • 60000:$0.1025
  • 150000:$0.0991
  • 300000:$0.0975
NTJD1155LT1G
DISTI # 10N9720
ON SemiconductorP CHANNEL MOSFET, -8V, SC-88,Transistor Polarity:N and P Complement,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1000:$0.1290
  • 500:$0.1430
  • 250:$0.1560
  • 100:$0.1700
  • 50:$0.2400
  • 25:$0.3100
  • 1:$0.4140
NTJD1155LT1G
DISTI # 71J7047
ON SemiconductorP CHANNEL MOSFET, -8V, SC-88, FULL REEL,Transistor Polarity:N and P Complement,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 18000:$0.1020
  • 6000:$0.1040
  • 1000:$0.1110
  • 500:$0.1600
  • 250:$0.1650
  • 100:$0.1700
  • 50:$0.3010
  • 1:$0.4530
NTJD1155LT1G
DISTI # 70341335
ON SemiconductorNTJD1155LT1G Dual N/P-channel MOSFET Transistor,1.3 A,8 V,6-Pin SC-88
RoHS: Compliant
0
  • 40:$0.2800
  • 100:$0.2770
  • 200:$0.2740
  • 400:$0.2720
NTJD1155LT1G
DISTI # 863-NTJD1155LT1G
ON SemiconductorMOSFET 8V +/-1.3A P-Channel w/Level Shift
RoHS: Compliant
0
  • 1:$0.4100
  • 10:$0.3060
  • 100:$0.1660
  • 1000:$0.1250
  • 3000:$0.1070
  • 9000:$0.1010
NTJD1155LT1
DISTI # 863-NTJD1155LT1
ON SemiconductorMOSFET 8V +/-1.3A P-Channel
RoHS: Not compliant
0
    NTJD1155LT1G
    DISTI # 7800605
    ON SemiconductorMOSFET N/P-CH 8V 1.3A LOAD SWITCH SC88, TA360
    • 20:£0.2460
    • 100:£0.1250
    NTJD1155LT1GON Semiconductor 1
      NTJD1155LT1G
      DISTI # 2825209
      ON SemiconductorMOSFET, N & P-CH, 8V, 1.3A, SC-88-6
      RoHS: Compliant
      0
      • 5000:$0.1700
      • 1000:$0.1800
      • 500:$0.2110
      • 250:$0.2620
      • 100:$0.3470
      • 25:$0.6470
      • 5:$0.8090
      NTJD1155LT1G
      DISTI # 2825209
      ON SemiconductorMOSFET, N & P-CH, 8V, 1.3A, SC-88-6
      RoHS: Compliant
      0
      • 500:£0.1040
      • 250:£0.1270
      • 100:£0.1300
      • 25:£0.2540
      • 5:£0.2650
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      Mfr.#: LBR2012T100KV

      OMO.#: OMO-LBR2012T100KV

      Fixed Inductors 0805 10uH 468mOhms +/-10%Tol 150mA
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      Mfr.#: MCP73811T-420I/OT

      OMO.#: OMO-MCP73811T-420I-OT-MICROCHIP-TECHNOLOGY

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      Mfr.#: PRG18BB330MB1RB

      OMO.#: OMO-PRG18BB330MB1RB-MURATA-ELECTRONICS

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      Disponibilidad
      Valores:
      22
      En orden:
      2005
      Ingrese la cantidad:
      El precio actual de NTJD1155LT1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,41 US$
      0,41 US$
      10
      0,31 US$
      3,06 US$
      100
      0,17 US$
      16,60 US$
      1000
      0,12 US$
      125,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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