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SPW55N80C3FKSA1

SPW55N80C3FKSA1
Mfr. #:
SPW55N80C3FKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 850V 54.9A TO247-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPW55N80C3FKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SPW55N80C3FKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
54.9 A
Rds On - Resistencia de la fuente de drenaje:
77 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
288 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
500 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
16.13 mm
Serie:
CoolMOS C3
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
Infineon Technologies
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
21 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
200 ns
Tiempo típico de retardo de encendido:
45 ns
Parte # Alias:
SP000849356 SPW55N80C3 SPW55N8C3XK
Unidad de peso:
1.340411 oz
Tags
SPW55, SPW5, SPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 85 mOhm 285 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:850V; Continuous Drain Current Id:54.9A; On Resistance Rds(On):0.077Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
SPW55N80C3FKSA1
DISTI # V99:2348_06378036		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		235
  • 720:$9.8580
  • 240:$11.3450
  • 25:$12.8690
  • 10:$13.4220
  • 1:$14.5870
SPW55N80C3FKSA1
DISTI # V36:1790_06378036		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$8.1290
  • 120000:$8.1360
  • 24000:$9.1960
  • 2400:$11.5200
  • 240:$11.9400
SPW55N80C3FKSA1
DISTI # SPW55N80C3FKSA1-ND		Infineon Technologies AGMOSFET N-CH 800V 54.9A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		47In Stock
  • 720:$10.6252
  • 240:$11.9442
  • 25:$13.5564
  • 10:$14.1430
  • 1:$15.3900
SPW55N80C3FKSA1
DISTI # 33368643		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1086
  • 2:$8.7409
SPW55N80C3FKSA1
DISTI # 33142793		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$14.6406
SPW55N80C3FKSA1
DISTI # 33157361		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		235
  • 1:$14.5870
SPW55N80C3XK
DISTI # SPW55N80C3FKSA1		Infineon Technologies AGTrans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: SPW55N80C3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$8.7900
  • 1440:$8.9900
  • 960:$9.2900
  • 480:$9.5900
  • 240:$9.9900
SPW55N80C3FKSA1
DISTI # 85X7431		Infineon Technologies AGMOSFET Transistor, N Channel, 54.9 A, 850 V, 0.077 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 500:$10.2100
  • 250:$10.9200
  • 100:$11.4800
  • 50:$12.2600
  • 25:$13.0400
  • 10:$13.6000
  • 1:$14.8000
SPW55N80C3FKSA1.
DISTI # 28AC3069		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:54.9A,Drain Source Voltage Vds:850V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:500W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 500:$10.2100
  • 250:$10.9200
  • 100:$11.4800
  • 50:$12.2600
  • 25:$13.0400
  • 10:$13.6000
  • 1:$14.8000
SPW55N80C3FKSA1
DISTI # 726-SPW55N80C3FKSA1		Infineon Technologies AGMOSFET N-Ch 850V 54.9A TO247-3
RoHS: Compliant		231
  • 1:$14.6500
  • 10:$13.4700
  • 25:$12.9100
  • 100:$11.3700
  • 250:$10.8100
  • 500:$10.1100
SPW55N80C3
DISTI # 726-SPW55N80C3		Infineon Technologies AGMOSFET N-Ch 850V 54.9A TO247-3
RoHS: Compliant		0
  • 1:$14.6500
  • 10:$13.4700
  • 25:$12.9100
  • 100:$11.3700
  • 250:$10.8100
  • 500:$10.1100
SPW55N80C3FKSA1Infineon Technologies AGSingle N-Channel 800 V 85 mOhm 285 nC CoolMOS Power Mosfet - TO-247-3
RoHS: Compliant		240Tube
  • 240:$10.4100
SPW55N80C3FKSA1
DISTI # 8977677P		Infineon Technologies AGMOSFET N-CHANNEL 850V 54.9A TO247, TU194
  • 15:£10.2700
  • 6:£10.9700
SPW55N80C3FKSA1
DISTI # 8977677		Infineon Technologies AGMOSFET N-CHANNEL 850V 54.9A TO247, EA27
  • 15:£10.2700
  • 6:£10.9700
  • 1:£12.4900
SPW55N80C3FKSA1
DISTI # 2443414		Infineon Technologies AGMOSFET, N CH, 850V, 54.9A, TO-247-3203
  • 100:£8.8600
  • 50:£9.4500
  • 10:£10.0500
  • 5:£11.3900
  • 1:£11.8300
SPW55N80C3FKSA1
DISTI # 2443414		Infineon Technologies AGMOSFET, N CH, 850V, 54.9A, TO-247-3
RoHS: Compliant		191
  • 500:$15.2400
  • 250:$16.2900
  • 100:$17.1300
  • 25:$19.4600
  • 10:$20.3000
  • 1:$22.0800
SPW55N80C3FKSA1
DISTI # XSKDRABV0051999		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$12.2300
  • 240:$13.1000
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 SIC DIODE TO247 650V
Disponibilidad
Valores:
219
En orden:
2202
Ingrese la cantidad:
El precio actual de SPW55N80C3FKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
14,65 US$
14,65 US$
10
13,47 US$
134,70 US$
25
12,91 US$
322,75 US$
100
11,37 US$
1 137,00 US$
250
10,81 US$
2 702,50 US$
500
10,11 US$
5 055,00 US$
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