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SIS108DN-T1-GE3

SIS108DN-T1-GE3
Mfr. #:
SIS108DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIS108DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIS108DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK1212-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Id - Corriente de drenaje continua:
16 A
Rds On - Resistencia de la fuente de drenaje:
34 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
13 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
24 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
28 S
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
SIS10, SIS1, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIS108DN-T1-GE3
DISTI # SIS108DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 80V PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		50In Stock
  • 1000:$0.4271
  • 500:$0.5410
  • 100:$0.6549
  • 10:$0.8400
  • 1:$0.9400
SIS108DN-T1-GE3
DISTI # SIS108DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 80V PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		50In Stock
  • 1000:$0.4271
  • 500:$0.5410
  • 100:$0.6549
  • 10:$0.8400
  • 1:$0.9400
SIS108DN-T1-GE3
DISTI # SIS108DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 80V PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.3539
  • 6000:$0.3677
  • 3000:$0.3871
SIS108DN-T1-GE3
DISTI # 06AH4244		Vishay IntertechnologiesMOSFET, N-CH, 80V, 16A, 150DEG C, 24W,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes50
  • 500:$0.4980
  • 250:$0.5630
  • 100:$0.6710
  • 50:$0.7390
  • 25:$0.8200
  • 10:$0.9050
  • 1:$0.9560
SIS108DN-T1-GE3
DISTI # 78-SIS108DN-T1-GE3		Vishay IntertechnologiesMOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		50
  • 1:$0.9200
  • 10:$0.7580
  • 100:$0.5810
  • 500:$0.5000
  • 1000:$0.3940
  • 3000:$0.3680
  • 6000:$0.3500
  • 9000:$0.3370
  • 24000:$0.3260
SIS108DN-T1-GE3
DISTI # 3104159		Vishay IntertechnologiesMOSFET, N-CH, 80V, 16A, 150DEG C, 24W
RoHS: Compliant		50
  • 1000:$0.4940
  • 500:$0.5740
  • 250:$0.6380
  • 100:$0.6850
  • 10:$0.8610
  • 1:$0.9880
SIS108DN-T1-GE3
DISTI # 3104159		Vishay IntertechnologiesMOSFET, N-CH, 80V, 16A, 150DEG C, 24W40
  • 500:£0.3690
  • 250:£0.4090
  • 100:£0.4480
  • 10:£0.6440
  • 1:£0.8250
Imagen Parte # Descripción
SIS108DN-T1-GE3

Mfr.#: SIS108DN-T1-GE3

OMO.#: OMO-SIS108DN-T1-GE3

 MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8
SIS108DN-T1-GE3

Mfr.#: SIS108DN-T1-GE3

OMO.#: OMO-SIS108DN-T1-GE3-1190

 MOSFET N-CH 80V PPAK 1212-8
Disponibilidad
Valores:
50
En orden:
2033
Ingrese la cantidad:
El precio actual de SIS108DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,92 US$
0,92 US$
10
0,76 US$
7,58 US$
100
0,58 US$
58,10 US$
500
0,50 US$
250,00 US$
1000
0,39 US$
394,00 US$
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