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FCP165N60E

FCP165N60E
Mfr. #:
FCP165N60E
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCP165N60E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FCP165N60E más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
23 A
Rds On - Resistencia de la fuente de drenaje:
165 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V, 30 V
Qg - Carga de puerta:
57 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
227 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
SuperFET II
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FCP165N60E
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
20 S
Otoño:
18 ns
Tipo de producto:
MOSFET
Hora de levantarse:
18 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
100 ns
Tiempo típico de retardo de encendido:
22 ns
Unidad de peso:
0.063493 oz
Tags
FCP165, FCP16, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 23A, 165mΩ, TO-220
***ark
SuperFET2 600V 165mohm slow version - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220
***et Europe
SUPERFET2 600V 165MOHM SLOW VERSION
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 23A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.132ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:227W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 23A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Parte # Mfg. Descripción Valores Precio
FCP165N60E
DISTI # V99:2348_14141720		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 800:$1.6660
  • 100:$2.0030
  • 25:$2.2630
  • 10:$2.2860
  • 1:$2.9832
FCP165N60E
DISTI # FCP165N60E-ND		ON SemiconductorMOSFET N-CH 600V 23A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		800In Stock
  • 800:$1.7984
  • 100:$2.1126
  • 25:$2.4376
  • 10:$2.5780
  • 1:$2.8700
FCP165N60E
DISTI # 25887488		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 5:$2.9832
FCP165N60E
DISTI # FCP165N60E		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.2900
  • 1000:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.7900
FCP165N60E
DISTI # FCP165N60E		ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION - Rail/Tube (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$1.1900
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
FCP165N60E
DISTI # 84Y5816		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.132ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes666
  • 500:$1.7300
  • 250:$1.9200
  • 100:$2.0300
  • 50:$2.1300
  • 25:$2.2400
  • 10:$2.3400
  • 1:$2.7600
FCP165N60E
DISTI # 512-FCP165N60E		ON SemiconductorMOSFET 600V 23A N-Chnl SuperFET Easy-Drive
RoHS: Compliant		95
  • 1:$2.7300
  • 10:$2.3200
  • 100:$2.0100
  • 250:$1.9000
  • 500:$1.7100
  • 1000:$1.4400
  • 2500:$1.3700
  • 5000:$1.3200
FCP165N60E
DISTI # 2565218		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3
RoHS: Compliant		666
  • 800:$2.6100
  • 100:$3.5600
  • 10:$4.3400
  • 1:$4.8600
FCP165N60E
DISTI # 2565218		ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3696
  • 500:£1.1700
  • 250:£1.3100
  • 100:£1.3900
  • 10:£1.5900
  • 1:£2.1200
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Disponibilidad
Valores:
95
En orden:
2078
Ingrese la cantidad:
El precio actual de FCP165N60E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,73 US$
2,73 US$
10
2,32 US$
23,20 US$
100
2,01 US$
201,00 US$
250
1,90 US$
475,00 US$
500
1,71 US$
855,00 US$
1000
1,44 US$
1 440,00 US$
2500
1,37 US$
3 425,00 US$
5000
1,32 US$
6 600,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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