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DZT751-13

DZT751-13
Mfr. #:
DZT751-13
Fabricante:
Diodes Incorporated
Descripción:
Bipolar Transistors - BJT PNP 1W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DZT751-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DZT751-13 DatasheetDZT751-13 Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-223-4
Polaridad del transistor:
PNP
Configuración:
Único
Voltaje colector-emisor VCEO Max:
- 60 V
Colector- Voltaje base VCBO:
- 80 V
Emisor- Voltaje base VEBO:
- 5 V
Voltaje de saturación colector-emisor:
- 600 mV
Corriente máxima del colector de CC:
- 6 A
Producto de ganancia de ancho de banda fT:
145 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
DZT751
Ganancia de corriente CC hFE Max:
70
Altura:
1.6 mm
Longitud:
6.5 mm
Embalaje:
Carrete
Ancho:
3.5 mm
Marca:
Diodos incorporados
Colector de CC / Ganancia base hfe Min:
40 at 2 A, 2 V
Pd - Disipación de energía:
2000 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
2500
Subcategoría:
Transistores
Unidad de peso:
0.003951 oz
Tags
DZT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***ical
Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R
*** Services
CoC and 2-years warranty / RFQ for pricing
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
***Yang
Trans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***enic
60V 2W 3A 100@500mA2V 75MHz 550mV@3A300mA PNP -55¡Í~+150¡Í@(Tj) SOT-223-4L Bipolar Transistors - BJT ROHS
***rchild Semiconductor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
***ark
TRANSISTOR, PNP SOT-223TRANSISTOR, PNP SOT-223; Transistor type:Low Saturation; Transistor polarity:PNP; Case style:SOT-223; Voltage, Vceo:60V; Current, Ic max:3mA; Power, Ptot:2W; hfe, min:100; Current, Ic hFE:0.5A; Voltage, RoHS Compliant: Yes
***roFlash
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
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BCP52 Series PNP 2 W 60 V 1 A Surface Mount Power Transistor - SOT-223
***p One Stop
Trans GP BJT PNP 60V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R
***trelec
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -1 / Collector-Emitter Voltage (Vceo) V = -60 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = -60 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 150 / Power Dissipation (Pd) W = 2 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -0.5 / Reflow Temperature Max. °C = 260
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
*** Source Electronics
Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 60V 3A SOT223
***ark
TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),SOT-223
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NZT660A Series 2 W 60 V Surface Mount PNP General Purpose Amplifier - SOT-223
***enic
60V 2W 3A 250@500mA2V 75MHz PNP 500mV@3A300mA -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
***ment14 APAC
Transistor, BIPOL, PNP, -60V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:75MHz; Power
***rchild Semiconductor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
***Yang
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***ical
Trans GP BJT PNP 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
***(Formerly Allied Electronics)
Trans GP BJT PNP 60V 1A 4Pin SOT223
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
***C
Trans GP BJT PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
FZT591 Series PNP 1 A 60 V SMT Silicon Medium Power Transistor - SOT-223
***(Formerly Allied Electronics)
60V PNP Power Transistor SOT-223
*** Source Electronics
Trans GP BJT PNP 60V 1.2A 1500mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 60V 1.2A SOT-223
***r Electronics
Power Bipolar Transistor, 1.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
***rchild Semiconductor
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78.
Parte # Mfg. Descripción Valores Precio
DZT751-13
DISTI # V36:1790_06698404		Zetex / Diodes IncTrans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		0
  • 2500000:$0.1454
  • 1250000:$0.1456
  • 250000:$0.1520
  • 25000:$0.1613
  • 2500:$0.1628
DZT751-13
DISTI # DZT751DICT-ND		Diodes IncorporatedTRANS PNP 60V 3A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2318In Stock
  • 1000:$0.1843
  • 500:$0.2385
  • 100:$0.3036
  • 10:$0.4070
  • 1:$0.4700
DZT751-13
DISTI # DZT751DIDKR-ND		Diodes IncorporatedTRANS PNP 60V 3A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2318In Stock
  • 1000:$0.1843
  • 500:$0.2385
  • 100:$0.3036
  • 10:$0.4070
  • 1:$0.4700
DZT751-13
DISTI # DZT751DITR-ND		Diodes IncorporatedTRANS PNP 60V 3A SOT-223
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.1400
  • 12500:$0.1417
  • 5000:$0.1522
  • 2500:$0.1628
DZT751-13
DISTI # DZT751-13		Diodes IncorporatedTrans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R (Alt: DZT751-13)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.1019
  • 15000:€0.1089
  • 10000:€0.1249
  • 5000:€0.1339
  • 2500:€0.1849
DZT751-13
DISTI # DZT751-13		Diodes IncorporatedTrans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: DZT751-13)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.1019
  • 15000:$0.1039
  • 10000:$0.1089
  • 5000:$0.1139
  • 2500:$0.1199
DZT751-13
DISTI # 621-DZT751-13		Diodes IncorporatedBipolar Transistors - BJT PNP 1W
RoHS: Compliant		3340
  • 1:$0.5300
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 2500:$0.1740
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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de DZT751-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,53 US$
0,53 US$
10
0,43 US$
4,34 US$
100
0,26 US$
26,50 US$
1000
0,20 US$
205,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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