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IRFH5250DTRPBF

IRFH5250DTRPBF
Mfr. #:
IRFH5250DTRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFH5250DTRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5250DTRPBF DatasheetIRFH5250DTRPBF Datasheet (P4-P6)IRFH5250DTRPBF Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
40 A
Rds On - Resistencia de la fuente de drenaje:
1.4 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
39 nC
Pd - Disipación de energía:
3.6 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.83 mm
Longitud:
6 mm
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Parte # Alias:
SP001577928
Tags
IRFH5250D, IRFH5250, IRFH525, IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 4000, N-Channel MOSFET, 100 A, 25 V, 8-Pin PQFN Infineon IRFH5250DTRPBF
***ure Electronics
Single N-Channel 25 V 1.4 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ied Electronics & Automation
MOSFET, N-Channel, 25V FETky, 100A, 1.4 mOhm, 39 nC Qg, PQFN
***ernational Rectifier
25V Single N-Channel HEXFET Power MOSFET with integrated Schottky Diode in a 5mm X 6mm PQFN package
***et Europe
Trans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R
***i-Key
MOSFET N-CH 25V 40A 8VQFN
***ical
Trans MOSFET N-CH 25V 40A T/R
***rt123
PQFN (5 x 6 mm)
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.001Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:3.6W; No. Of Pins:8Pins Rohs Compliant: Yes
***ment14 APAC
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; MultiPhase SyncFET; Point of Load SyncFET
***nell
MOSFET, CANALE N, 25V, 100A, PQFN; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.001ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:3.6W; Modello Case Transistor:PQFN; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
IRFH5250DTRPBF
DISTI # V72:2272_13890320		Infineon Technologies AGTrans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R4000
  • 3000:$0.5953
  • 1000:$0.6615
  • 500:$0.8084
  • 250:$0.8983
  • 100:$0.9012
  • 25:$1.0577
  • 10:$1.0774
  • 1:$1.2149
IRFH5250DTRPBF
DISTI # IRFH5250DTRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 25V 40A 8VQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		463In Stock
  • 1000:$0.8625
  • 500:$1.0409
  • 100:$1.3384
  • 10:$1.6660
  • 1:$1.8400
IRFH5250DTRPBF
DISTI # IRFH5250DTRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 25V 40A 8VQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		463In Stock
  • 1000:$0.8625
  • 500:$1.0409
  • 100:$1.3384
  • 10:$1.6660
  • 1:$1.8400
IRFH5250DTRPBF
DISTI # IRFH5250DTRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 25V 40A 8VQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.7796
IRFH5250DTRPBF
DISTI # 30703072		Infineon Technologies AGTrans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R8000
  • 8000:$0.6622
  • 4000:$0.6885
IRFH5250DTRPBF
DISTI # 26196239		Infineon Technologies AGTrans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R4000
  • 3000:$0.5953
  • 1000:$0.6615
  • 500:$0.8084
  • 250:$0.8983
  • 100:$0.9012
  • 25:$1.0577
  • 12:$1.0774
IRFH5250DTRPBF
DISTI # IRFH5250DTRPBF		Infineon Technologies AGTrans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH5250DTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.6049
  • 8000:$0.5829
  • 16000:$0.5619
  • 24000:$0.5429
  • 40000:$0.5329
IRFH5250DTRPBF
DISTI # 34AC1742		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.001ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation, RoHS Compliant: Yes3410
  • 1:$1.5500
  • 10:$1.3200
  • 25:$1.2300
  • 50:$1.1400
  • 100:$1.0500
  • 250:$0.9850
  • 500:$0.9190
  • 1000:$0.7620
IRFH5250DTRPBF.
DISTI # 32AC0692		Infineon Technologies AGTRENCH_MOSFETS , ROHS COMPLIANT: YES0
  • 1:$0.6050
  • 8000:$0.5830
  • 16000:$0.5620
  • 24000:$0.5430
  • 40000:$0.5330
IRFH5250DTRPBF
DISTI # 70019247		Infineon Technologies AGMOSFET,N-Channel,25V FETky,100A,1.4mOhm,39 nC Qg,PQFN
RoHS: Compliant		0
  • 4000:$2.2950
IRFH5250DTRPBFInternational Rectifier 
RoHS: Not Compliant		2816
  • 1000:$0.7800
  • 500:$0.8200
  • 100:$0.8500
  • 25:$0.8900
  • 1:$0.9600
IRFH5250DTRPBF
DISTI # 942-IRFH5250DTRPBF		Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC
RoHS: Compliant		1481
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7620
  • 4000:$0.6830
  • 8000:$0.6570
IRFH5250DTRPBF
DISTI # 1300979P		Infineon Technologies AGMOSFET HEXFET N-CH 25V 40A PQFN8, RL1875
  • 50:£0.4200
IRFH5250DTRPBF
DISTI # C1S322000489729		Infineon Technologies AGTrans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 250:$0.8983
  • 100:$0.9012
  • 10:$1.0774
IRFH5250DTRPBF
DISTI # C1S322000489710		Infineon Technologies AGTrans MOSFET N-CH 25V 40A 8-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 4000:$0.7130
IRFH5250DTRPBF
DISTI # 2781124		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, PQFN
RoHS: Compliant		3410
  • 1:$2.8200
  • 10:$2.4500
  • 100:$2.0000
  • 250:$1.6900
  • 500:$1.4600
  • 1000:$1.3800
IRFH5250DTRPBF
DISTI # 2781124		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, PQFN
RoHS: Compliant		3410
  • 1:£0.8590
  • 10:£0.8420
  • 100:£0.8250
  • 250:£0.8070
  • 500:£0.7940
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IRFH5250DTRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,54 US$
1,54 US$
10
1,31 US$
13,10 US$
100
1,05 US$
105,00 US$
500
0,92 US$
459,50 US$
1000
0,76 US$
762,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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