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GS8642Z18GB-250IV

GS8642Z18GB-250IV
Mfr. #:
GS8642Z18GB-250IV
Fabricante:
GSI Technology
Descripción:
SRAM 1.8/2.5V 4M x 18 72M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8642Z18GB-250IV Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8642Z18GB-250IV más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
72 Mbit
Organización:
4 M x 18
Tiempo de acceso:
6.5 ns
Frecuencia máxima de reloj:
250 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
250 mA, 335 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-119
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8642Z18GB
Escribe:
NBT Pipleline / Flow Through
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
14
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
NBT SRAM
Tags
GS8642Z18GB-25, GS8642Z18GB-2, GS8642Z18G, GS8642Z1, GS8642Z, GS8642, GS864, GS86, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 72M-Bit 4M x 18 6.5ns/3ns 119-Pin F-BGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II, 73728 Kb Density, 250 MHz Frequency, BGA-165, RoHS
***et
SRAM Chip Sync Dual 1.8V 72M-Bit 8M x 9-Bit 0.45ns 165-Pin FBGA Tray
***ure Electronics
CY7C1525KV18: 72 Mb (8M x 9) 250MHz QDR® II SRAM Two-Word Burst Architecture
***-Wing Technology
e1 Surface Mount CY7C1525 Tray ic memory 250MHz 450ps 15mm 640mA
***i-Key
IC SRAM 72MBIT PARALLEL 165FBGA
***ure Electronics
CY7C1518AV18 72 Mb (4 M x 18) 250 MHz 1.8 V DDR-II 2-Word Burst SRAM - FBGA-165
***et
SRAM Chip Sync Single 1.8V 72M-Bit 4M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1518 Tray ic memory 250MHz 450ps 430mA 72Mb
***ponent Stockers USA
4M X 18 DDR SRAM 0.45 ns PBGA165
***or
DDR SRAM, 4MX18, 0.45NS PBGA165
***i-Key
IC SRAM 72MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 72M-Bit 8M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1525 Tray ic memory 250MHz 450ps 15mm 640mA
***ponent Stockers USA
8M X 9 QDR SRAM 0.45 ns PBGA165
***or
IC SRAM 72MBIT PARALLEL 165FBGA
***pmh
DDR SRAM, 4MX18, 0.45NS PBGA165
***ponent Sense
IC DRAM HMC2.3 1.0V FW1.0 Serial -
***et
SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin FBGA
***i-Key
IC SRAM 72MBIT PARALLEL 165LFBGA
***ark
72Mb, Quad (Burst Of 2), Sync Sram, 2M X 36, 165 Ball Fbga (15X17 Mm), Rohs |Integrated Silicon Solution (Issi) IS61QDB42M36A-300M3L
***ical
SRAM Chip Sync Dual 1.8V 72M-bit 4M x 18 0.45ns 165-Pin FBGA
***i-Key
IC SRAM 72MBIT PARALLEL 165LFBGA
***ark
72Mb, Quad (Burst Of 4), Sync Sram, 4M X 18, 165 Ball Fbga (15X17 Mm) |Integrated Silicon Solution (Issi) IS61QDB44M18A-300M3L
***et
SRAM Chip Sync Dual 1.8V 72M-Bit 4M x 18 0.45ns 165-Pin FBGA
***i-Key
IC SRAM 72MBIT PARALLEL 165LFBGA
***ark
72Mb, Quad (Burst Of 2), Sync Sram, 4M X 18, 165 Ball Fbga (15X17 Mm), Rohs |Integrated Silicon Solution (Issi) IS61QDB24M18A-300M3L
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Imagen Parte # Descripción
GS8642Z18GB-167

Mfr.#: GS8642Z18GB-167

OMO.#: OMO-GS8642Z18GB-167

 SRAM 2.5 or 3.3V 4M x 18 72M
GS8642Z18B-200I

Mfr.#: GS8642Z18B-200I

OMO.#: OMO-GS8642Z18B-200I

 SRAM 2.5 or 3.3V 4M x 18 72M
GS8642Z18GB-167V

Mfr.#: GS8642Z18GB-167V

OMO.#: OMO-GS8642Z18GB-167V

 SRAM 1.8/2.5V 4M x 18 72M
GS8642Z18B-167IV

Mfr.#: GS8642Z18B-167IV

OMO.#: OMO-GS8642Z18B-167IV

 SRAM 1.8/2.5V 4M x 18 72M
GS8642Z18B-300I

Mfr.#: GS8642Z18B-300I

OMO.#: OMO-GS8642Z18B-300I

 SRAM 2.5 or 3.3V 4M x 18 72M
GS8642Z18GB-167I

Mfr.#: GS8642Z18GB-167I

OMO.#: OMO-GS8642Z18GB-167I

 SRAM 2.5 or 3.3V 4M x 18 72M
GS8642Z18B-250M

Mfr.#: GS8642Z18B-250M

OMO.#: OMO-GS8642Z18B-250M

 SRAM 2.5 or 3.3V 4M x 18 72M
GS8642Z18B-167V

Mfr.#: GS8642Z18B-167V

OMO.#: OMO-GS8642Z18B-167V

 SRAM 1.8/2.5V 4M x 18 72M
GS8642Z18B-200V

Mfr.#: GS8642Z18B-200V

OMO.#: OMO-GS8642Z18B-200V

 SRAM 1.8/2.5V 4M x 18 72M
GS8642Z18B-300

Mfr.#: GS8642Z18B-300

OMO.#: OMO-GS8642Z18B-300

 SRAM 2.5 or 3.3V 4M x 18 72M
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de GS8642Z18GB-250IV es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
14
130,00 US$
1 820,00 US$
28
120,71 US$
3 379,88 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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