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IPD320N20N3GATMA1

IPD320N20N3GATMA1
Mfr. #:
IPD320N20N3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET MV POWER MOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD320N20N3GATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
34 A
Rds On - Resistencia de la fuente de drenaje:
32 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
22 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
136 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
28 S
Otoño:
4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns
Tiempo típico de retardo de encendido:
11 ns
Parte # Alias:
G IPD320N20N3 SP001127832
Unidad de peso:
0.139332 oz
Tags
IPD320N20N3G, IPD32, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 32 mOhm 22 nC OptiMOS™ Power Mosfet - DPAK
***roFlash
Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 200V, 34A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
***(Formerly Allied Electronics)
Infineon IRFR4620TRLPBF N-channel MOSFET; 24 A; 200 V HEXFET; 3-Pin DPAK
***ure Electronics
Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252AA
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
*** Source Electronics
MOSFET N-CH 200V 24A DPAK / Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) DPAK T/R
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 200V, 24A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***(Formerly Allied Electronics)
AUIRFR4620 N-channel MOSFET Transistor; 24 A; 200 V; 3-Pin TO-252AA
***ineon SCT
Automotive Q101 200V Single N-Channel HEXFET Power MOSFET in a D-PAK Package, DPAK-3, RoHS
***ical
Trans MOSFET N-CH Si 200V 24A Automotive 3-Pin(2+Tab) DPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ark
Mosfet, N Channel, 200V, 24A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.064Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***emi
N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ
***ure Electronics
N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA
***r Electronics
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel PowerTrench® MOSFET, 150V, 29A, 54mΩ
***ure Electronics
FDD2572 Series 150 V 29 A 54 mOhm N-Channel PowerTrench Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
LED Indication - Discrete 3 (168 Hours) Tape & Reel (TR) Surface Mount 0603 (1608 Metric) Orange Rectangle with Flat Top 1.93V Standard LED ORANGE DIFFUSED SMD
***nell
MOSFET, AEC-Q101, N-CH, 150V, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 135W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench FDD Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 150 V 0.136 Ohm 51 nC 107 W Silicon SMT Mosfet - TO-252-3
***ical
Trans MOSFET N-CH 150V 25A Automotive 3-Pin(2+Tab) DPAK
***nell
MOSFET,N CH,W DIODE,150V,25A,TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 107W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V
Parte # Mfg. Descripción Valores Precio
IPD320N20N3GATMA1
DISTI # V72:2272_13979452		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R2445
  • 1000:$1.7500
  • 500:$1.8310
  • 250:$2.1220
  • 100:$2.1990
  • 25:$2.4690
  • 10:$2.7430
  • 1:$3.5475
IPD320N20N3GATMA1
DISTI # V36:1790_13979452		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R0
    IPD320N20N3GATMA1
    DISTI # IPD320N20N3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 200V 34A
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2376In Stock
    • 1000:$1.4469
    • 500:$1.7463
    • 100:$2.1255
    • 10:$2.6440
    • 1:$2.9400
    IPD320N20N3GATMA1
    DISTI # IPD320N20N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 200V 34A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2376In Stock
    • 1000:$1.4469
    • 500:$1.7463
    • 100:$2.1255
    • 10:$2.6440
    • 1:$2.9400
    IPD320N20N3GATMA1
    DISTI # IPD320N20N3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 200V 34A
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$1.2918
    • 2500:$1.3079
    IPD320N20N3GATMA1
    DISTI # 32928307    		Infineon Technologies AGTrans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R2445
    • 1000:$1.7500
    • 500:$1.8310
    • 250:$2.1220
    • 100:$2.1990
    • 25:$2.4690
    • 10:$2.7430
    • 5:$3.5475
    IPD320N20N3GATMA1
    DISTI # IPD320N20N3GATMA1    		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD320N20N3GATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$1.1724
    • 15000:$1.1937
    • 10000:$1.2352
    • 5000:$1.2815
    • 2500:$1.3295
    IPD320N20N3GATMA1
    DISTI # 47W3471    		Infineon Technologies AGMOSFET, N CHANNEL, 200V, 34A, TO252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes3028
    • 1000:$1.3400
    • 500:$1.6300
    • 100:$1.8600
    • 10:$2.3200
    • 1:$2.7400
    IPD320N20N3GATMA1.
    DISTI # 15AC3079    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:136W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 25000:$1.1800
    • 15000:$1.2000
    • 10000:$1.2400
    • 5000:$1.2900
    • 1:$1.3300
    IPD320N20N3GATMA1
    DISTI # 726-IPD320N20N3GATMA    		Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant    		11751
    • 1:$2.7100
    • 10:$2.3000
    • 100:$1.8400
    • 500:$1.6100
    • 1000:$1.3300
    • 2500:$1.2400
    • 5000:$1.2000
    IPD320N20N3GATMA1
    DISTI # 1702294    		Infineon Technologies AGMOSFET N-CH 200V 34A OPTIMOS3 DPAK, RL2450
    • 5000:£0.8900
    • 2500:£0.9090
    IPD320N20N3GATMA1
    DISTI # 2212824    		Infineon Technologies AGMOSFET, N-CH, 200V, 34A, TO252-33143
    • 500:£1.2500
    • 250:£1.3400
    • 100:£1.4300
    • 10:£1.8000
    • 1:£2.3800
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    Disponibilidad
    Valores:
    12
    En orden:
    1995
    Ingrese la cantidad:
    El precio actual de IPD320N20N3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,71 US$
    2,71 US$
    10
    2,30 US$
    23,00 US$
    100
    1,84 US$
    184,00 US$
    500
    1,61 US$
    805,00 US$
    1000
    1,33 US$
    1 330,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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