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IGD06N60TATMA1

IGD06N60TATMA1
Mfr. #:
IGD06N60TATMA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGD06N60TATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IGD06N60TATMA1 DatasheetIGD06N60TATMA1 Datasheet (P4-P6)IGD06N60TATMA1 Datasheet (P7-P9)IGD06N60TATMA1 Datasheet (P10-P12)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-252-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.5 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
12 A
Pd - Disipación de energía:
88 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP IGBT
Embalaje:
Carrete
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
2500
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGD06N60T IGD6N6TXT SP000960698
Unidad de peso:
0.011175 oz
Tags
IGD06, IGD0, IGD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) TO-252
***nell
TRANSISTOR, IGBT, 600V, 12A, TO-252; DC Collector Current: 12A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 88W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TRENCHSTOP™ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
The 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO252 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO252-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ow.cn
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Igbt, Single, 600V, 12A, To-252; Dc Collector Current:12A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW
***ical
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 27pF 50volts C0G 5%
***or
DISCRETE IGBT WITHOUT ANTI-PARAL
***ical
Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***ure Electronics
H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252
***nell
IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ical
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) DPAK T/R
***(Formerly Allied Electronics)
600V DC-1 KHZ (STANDARD) COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10SDTRPBF
***-Wing Technology
Tube Surface Mount ROHS3Compliant IGBT Transistor 1.8V @ 15V 8A 14A 38W 28ns
***nell
IGBT, COPAK, D-PAK; DC Collector Current: 14A; Collector Emitter Saturation Voltage Vce(on): 1.1V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operati
***ical
Trans IGBT Chip N-CH 600V 15A 55000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
STGD7NB60S Series 600 V 7 A SMT N-Channel Power MESHTM IGBT - TO-252-3, DPAK
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 7 Amp
***icroelectronics SCT
Short-circuit rugged IGBT, DPAK, Tape and Reel
***ernational Rectifier
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:8.5A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes
***nell
IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1
Parte # Mfg. Descripción Valores Precio
IGD06N60TATMA1
DISTI # V72:2272_06384581		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1990
  • 75000:$0.4081
  • 30000:$0.4132
  • 15000:$0.4184
  • 6000:$0.4303
  • 3000:$0.4349
  • 1000:$0.4660
  • 500:$0.5955
  • 250:$0.6803
  • 100:$0.6875
  • 50:$0.8299
  • 25:$0.9102
  • 10:$1.0113
  • 1:$1.1855
IGD06N60TATMA1
DISTI # IGD06N60TATMA1CT-ND		Infineon Technologies AGIGBT 600V 12A 88W TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IGD06N60TATMA1
    DISTI # IGD06N60TATMA1DKR-ND    		Infineon Technologies AGIGBT 600V 12A 88W TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IGD06N60TATMA1
      DISTI # IGD06N60TATMA1TR-ND      		Infineon Technologies AGIGBT 600V 12A 88W TO252-3
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.4917
      IGD06N60TATMA1
      DISTI # 29028577      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		1990
      • 15:$1.1855
      IGD06N60TATMA1
      DISTI # IGD06N60TATMA1      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IGD06N60TATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 25000:$0.4249
      • 15000:$0.4319
      • 10000:$0.4469
      • 5000:$0.4639
      • 2500:$0.4809
      IGD06N60TATMA1
      DISTI # IGD06N60TATMA1      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Bulk (Alt: IGD06N60TATMA1)
      RoHS: Compliant
      Min Qty: 863
      Container: Bulk      		Americas - 0
      • 8630:$0.3679
      • 4315:$0.3749
      • 2589:$0.3879
      • 1726:$0.4019
      • 863:$0.4169
      IGD06N60TATMA1
      DISTI # SP000960698      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R (Alt: SP000960698)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.3739
      • 15000:€0.4029
      • 10000:€0.4369
      • 5000:€0.4769
      • 2500:€0.5829
      IGD06N60TATMA1
      DISTI # 13AC8999      		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 12A, TO-252,DC Collector Current:12A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:88W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-252,No. of Pins:3Pins,RoHS Compliant: Yes2490
      • 1000:$0.5070
      • 500:$0.6420
      • 250:$0.6850
      • 100:$0.7270
      • 50:$0.8000
      • 25:$0.8730
      • 10:$0.9460
      • 1:$1.1000
      IGD06N60TATMA1
      DISTI # 726-IGD06N60TATMA1      		Infineon Technologies AGIGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diod
      RoHS: Compliant      		1863
      • 1:$1.0900
      • 10:$0.9370
      • 100:$0.7200
      • 500:$0.6360
      • 1000:$0.5020
      • 2500:$0.4450
      • 10000:$0.4290
      IGD06N60TATMA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
      RoHS: Compliant      		394
      • 1000:$0.3800
      • 500:$0.4000
      • 100:$0.4200
      • 25:$0.4400
      • 1:$0.4700
      IGD06N60TATMA1
      DISTI # IGD06N60T      		Infineon Technologies AG600V 12A 88W TO252
      RoHS: Compliant      		0
      • 5:€1.2500
      • 50:€0.6500
      • 200:€0.3500
      • 500:€0.3300
      IGD06N60TATMA1
      DISTI # 2725778      		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 12A, TO-252
      RoHS: Compliant      		2490
      • 10:$1.3900
      • 1:$1.6000
      IGD06N60TATMA1
      DISTI # 2725778      		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 12A, TO-2524990
      • 500:£0.4850
      • 250:£0.5180
      • 100:£0.5500
      • 10:£0.7710
      • 1:£0.9500
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      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de IGD06N60TATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,09 US$
      1,09 US$
      10
      0,94 US$
      9,37 US$
      100
      0,72 US$
      72,00 US$
      500
      0,64 US$
      318,00 US$
      1000
      0,50 US$
      502,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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