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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI7810DN-T1-GE3 DISTI # V36:1790_09216385 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 0 |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 Min Qty: 1 Container: Cut Tape (CT) | 1985In Stock |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 Min Qty: 1 Container: Digi-Reel® | 1985In Stock |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7810DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI7810DN-T1-GE3 DISTI # SI7810DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R (Alt: SI7810DN-T1-GE3) Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI7810DN-T1-GE3 DISTI # 781-SI7810DN-GE3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 1984 |
|
| SI7810DN-T1-GE3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | Americas - 12000 |
|
| SI7810DNT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SI7810DN-T1-GE3 OMO.#: OMO-SI7810DN-T1-GE3 |
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
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Mfr.#: SI7810DN-T1-E3 OMO.#: OMO-SI7810DN-T1-E3 |
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
|
Mfr.#: SI7810DN-T1-E3-CUT TAPE |
Nuevo y original |
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Mfr.#: SI7810DN OMO.#: OMO-SI7810DN-1190 |
Nuevo y original |
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|
Mfr.#: SI7810DN-T1 OMO.#: OMO-SI7810DN-T1-1190 |
POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), 100V, 0.062OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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Mfr.#: SI7810DN-T1-E OMO.#: OMO-SI7810DN-T1-E-1190 |
Nuevo y original |
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Mfr.#: SI7810DN-T1-GE3 OMO.#: OMO-SI7810DN-T1-GE3-VISHAY |
MOSFET N-CH 100V 3.4A 1212-8 |
|
|
Mfr.#: SI7810DN-T1E3 OMO.#: OMO-SI7810DN-T1E3-1190 |
Nuevo y original |
|
|
Mfr.#: SI7810DNT1GE3 OMO.#: OMO-SI7810DNT1GE3-1190 |
Power Field-Effect Transistor, 3.4A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: SI7810DN-T1-E3 OMO.#: OMO-SI7810DN-T1-E3-VISHAY |
MOSFET N-CH 100V 3.4A 1212-8 |