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2MBI75S-120

2MBI75S-120
Mfr. #:
2MBI75S-120
Fabricante:
Fuji Electric Co Ltd
Descripción:
IGBT STANDARD MODULE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2MBI75S-120 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
2MBI7, 2MBI, 2MB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***omponent
IGBT POWER TRANSISTOR MODULE
***ark
IGBT MODULE, 1200V, 75A; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:100A; Voltage, Vce Sat Max:2.6V; Power Dissipation:600W; Case Style:M232; Termination Type:Screw; ;RoHS Compliant: Yes
***nell
IGBT MODULE, 1200V, 75A; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:100A; Voltage, Vce Sat Max:2.6V; Power Dissipation:600W; Case Style:M232; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:75A; Current, Icm Pulsed:200A; External Depth:34mm; External Length / Height:30mm; Power, Pd:600W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Time, Fall:300ns; Time, Rise:600ns; Transistors, No. of:2; Voltage, Isolation:2500V; Weight:0.18kg; Width, External:92mm
***ment14 APAC
IGBT MODULE, 1200V, 75A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; Current Ic @ Vce Sat:75A; Current Ic Continuous a Max:100A; Current Temperature:25°C; External Depth:34mm; External Length / Height:30mm; External Width:92mm; Fall Time tf:300ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; No. of Transistors:2; Package / Case:M232; Power Dissipation Max:600W; Power Dissipation Pd:600W; Pulsed Current Icm:200A; Rise Time:600ns; Termination Type:Screw; Voltage Vces:1.2kV; Weight:0.18kg
Parte # Mfg. Descripción Valores Precio
2MBI75S-120
DISTI # FE0000000001334		Fuji Electric Co LtdIGBT STANDARD MODULE
RoHS: Compliant		0 in Stock0 on Order
  • 20:$66.6300
  • 1:$71.7500
2MBI75S-120-M
DISTI # FE0000000001336		Fuji Electric Co LtdIGBT STANDARD MODULE
RoHS: Compliant		0 in Stock0 on Order
  • 20:$66.6300
  • 1:$71.7500
2MBI75S-120-50
DISTI # FE0000000001335		Fuji Electric Co LtdIGBT STANDARD MODULE
RoHS: Compliant		0 in Stock0 on Order
  • 20:$83.8300
  • 1:$90.2800
Imagen Parte # Descripción
2MBI75F-060

Mfr.#: 2MBI75F-060

OMO.#: OMO-2MBI75F-060-1190

 Nuevo y original
2MBI75J-060

Mfr.#: 2MBI75J-060

OMO.#: OMO-2MBI75J-060-1190

 Nuevo y original
2MBI75L-120

Mfr.#: 2MBI75L-120

OMO.#: OMO-2MBI75L-120-1190

 Nuevo y original
2MBI75N-060

Mfr.#: 2MBI75N-060

OMO.#: OMO-2MBI75N-060-1190

 Nuevo y original
2MBI75N-060-01

Mfr.#: 2MBI75N-060-01

OMO.#: OMO-2MBI75N-060-01-1190

 Nuevo y original
2MBI75S-120

Mfr.#: 2MBI75S-120

OMO.#: OMO-2MBI75S-120-1190

 IGBT STANDARD MODULE
2MBI75U4A-120

Mfr.#: 2MBI75U4A-120

OMO.#: OMO-2MBI75U4A-120-1190

 100A, 1200V, N-CHANNEL IGBT
2MBI75U4A-120-50

Mfr.#: 2MBI75U4A-120-50

OMO.#: OMO-2MBI75U4A-120-50-1190

 Nuevo y original
2MBI75VA-120-50

Mfr.#: 2MBI75VA-120-50

OMO.#: OMO-2MBI75VA-120-50-1190

 IGBT, MODULE, N-CH, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:390W, Collector Emitter Voltage V
2MBI75VA-170-50

Mfr.#: 2MBI75VA-170-50

OMO.#: OMO-2MBI75VA-170-50-1190

 IGBT
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de 2MBI75S-120 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,00 US$
0,00 US$
10
0,00 US$
0,00 US$
100
0,00 US$
0,00 US$
500
0,00 US$
0,00 US$
1000
0,00 US$
0,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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