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SI7858ADP-T1-GE3

SI7858ADP-T1-GE3
Mfr. #:
SI7858ADP-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 12V 29A 5.4W 2.6mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7858ADP-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI7858ADP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET / PowerPAK
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.9 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
40 ns
Hora de levantarse
40 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
20 A
Vds-Drain-Source-Breakdown-Voltage
12 V
Resistencia a la fuente de desagüe de Rds
2.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
140 ns
Tiempo de retardo de encendido típico
40 ns
Modo de canal
Mejora
Tags
SI7858ADP-T, SI7858AD, SI7858A, SI7858, SI785, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 12V 20A 8-Pin PowerPAK SO T/R
***ure Electronics
12V, 29A, 2.6mohm, N-Channel, Powerpak SO-8
***ment14 APAC
N CHANNEL MOSFET, 12V, 20A; Transistor P; N CHANNEL MOSFET, 12V, 20A; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:12V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:950mV
Parte # Mfg. Descripción Valores Precio
SI7858ADP-T1-GE3
DISTI # SI7858ADP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 12V 20A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI7858ADP-T1-GE3
    DISTI # SI7858ADP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 12V 20A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI7858ADP-T1-GE3
      DISTI # SI7858ADP-T1-GE3TR-ND      		Vishay SiliconixMOSFET N-CH 12V 20A PPAK SO-8
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$1.0857
      SI7858ADP-T1-GE3
      DISTI # SI7858ADP-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 12V 20A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7858ADP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$1.0639
      • 6000:$1.0319
      • 12000:$0.9899
      • 18000:$0.9629
      • 30000:$0.9369
      SI7858ADP-T1-GE3
      DISTI # 33P5434      		Vishay IntertechnologiesN CHANNEL MOSFET, 12V, 20A, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:950mV RoHS Compliant: Yes0
      • 1:$2.2600
      • 2000:$2.1600
      • 4000:$2.0200
      • 8000:$1.8800
      • 12000:$1.8000
      • 20000:$1.7800
      SI7858ADP-T1-GE3
      DISTI # 26R1939      		Vishay IntertechnologiesN CHANNEL MOSFET, 12V, 20A,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:950mV,No. of Pins:8Pins RoHS Compliant: Yes0
      • 1:$3.5100
      • 25:$2.9100
      • 50:$2.6500
      • 100:$2.3900
      • 250:$2.3200
      • 500:$2.0800
      • 1000:$1.7500
      SI7858ADP-T1-GE3
      DISTI # 781-SI7858ADP-T1-GE3      		Vishay IntertechnologiesMOSFET 12V 29A 5.4W 2.6mohm @ 4.5V
      RoHS: Compliant      		1416
      • 1:$3.5100
      • 10:$2.9100
      • 100:$2.3900
      • 250:$2.3200
      • 500:$2.0800
      • 1000:$1.7500
      • 3000:$1.6700
      Imagen Parte # Descripción
      SI7858ADP-T1-E3

      Mfr.#: SI7858ADP-T1-E3

      OMO.#: OMO-SI7858ADP-T1-E3

      		 MOSFET 12V 29A 0.0026Ohm
      SI7858ADP-T1-GE3

      Mfr.#: SI7858ADP-T1-GE3

      OMO.#: OMO-SI7858ADP-T1-GE3

      		 MOSFET 12V 29A 5.4W 2.6mohm @ 4.5V
      SI7858ADP-T1-GE3

      Mfr.#: SI7858ADP-T1-GE3

      OMO.#: OMO-SI7858ADP-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 12V 29A 5.4W 2.6mohm @ 4.5V
      SI7858ADP-T1-E3-CUT TAPE

      Mfr.#: SI7858ADP-T1-E3-CUT TAPE

      OMO.#: OMO-SI7858ADP-T1-E3-CUT-TAPE-1190

      		 Nuevo y original
      SI7858ADP

      Mfr.#: SI7858ADP

      OMO.#: OMO-SI7858ADP-1190

      		 Nuevo y original
      SI7858ADP-T1-E3

      Mfr.#: SI7858ADP-T1-E3

      OMO.#: OMO-SI7858ADP-T1-E3-VISHAY

      		 MOSFET N-CH 12V 20A PPAK SO-8
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de SI7858ADP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,41 US$
      1,41 US$
      10
      1,34 US$
      13,35 US$
      100
      1,26 US$
      126,48 US$
      500
      1,19 US$
      597,25 US$
      1000
      1,12 US$
      1 124,30 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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