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RQ3E100GNTB

RQ3E100GNTB
Mfr. #:
RQ3E100GNTB
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET 4.5V Drive Nch MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RQ3E100GNTB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RQ3E100GNTB más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSMT-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
10 A
Rds On - Resistencia de la fuente de drenaje:
11.7 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
7.9 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2 W
Configuración:
Único
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
8 S
Otoño:
3.1 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.3 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
22.4 ns
Tiempo típico de retardo de encendido:
8.4 ns
Parte # Alias:
RQ3E100GN
Tags
RQ3E100G, RQ3E10, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 30V 10A 8-Pin HSMT T/R
***et
4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE
***ark
Mosfet, N-Ch, 30V, 21A, Hsmt-8; Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Medium Power MOSFETs
ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.
Parte # Mfg. Descripción Valores Precio
RQ3E100GNTB
DISTI # C1S625901169786		ROHM SemiconductorTrans MOSFET N-CH 30V 10A 8-Pin HSMT T/R
RoHS: Compliant		40
  • 10:$0.1540
RQ3E100GNTB
DISTI # RQ3E100GNTBCT-ND		ROHM SemiconductorMOSFET N-CH 30V 10A 8-HSMT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3001In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
RQ3E100GNTB
DISTI # RQ3E100GNTBDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 10A 8-HSMT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3001In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
RQ3E100GNTB
DISTI # RQ3E100GNTBTR-ND		ROHM SemiconductorMOSFET N-CH 30V 10A 8-HSMT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1117
  • 15000:$0.1218
  • 6000:$0.1302
  • 3000:$0.1386
RQ3E100GNTB
DISTI # RQ3E100GNTB		ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE - Tape and Reel (Alt: RQ3E100GNTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    RQ3E100GNTB
    DISTI # 755-RQ3E100GNTB    		ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant    		5983
    • 1:$0.4800
    • 10:$0.3730
    • 100:$0.2020
    • 1000:$0.1520
    • 3000:$0.1310
    • 9000:$0.1220
    • 24000:$0.1120
    • 45000:$0.1080
    RQ3E100GNTBROHM Semiconductor 27
    • 7:$0.7200
    • 1:$0.9000
    RQ3E100GNTBROHM SemiconductorRoHS(ship within 1day)34
    • 1:$0.7000
    • 10:$0.4100
    • 50:$0.2600
    • 100:$0.2200
    • 500:$0.1900
    • 1000:$0.1800
    RQ3E100GNTB
    DISTI # 2706632    		ROHM SemiconductorMOSFET, N-CH, 30V, 21A, HSMT-80
    • 500:£0.1180
    • 250:£0.1360
    • 100:£0.1540
    • 25:£0.3080
    • 5:£0.3240
    RQ3E100GNTB
    DISTI # 2706632    		ROHM SemiconductorMOSFET, N-CH, 30V, 21A, HSMT-8
    RoHS: Compliant    		0
    • 1000:$0.2350
    • 500:$0.3130
    • 100:$0.4180
    • 10:$0.6130
    • 1:$0.7500
    RQ3E100GNTBROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant    		Americas -
      RQ3E100GNTBROHM Semiconductor 100
      • 1:¥3.7745
      • 100:¥2.1402
      • 1500:¥1.3569
      • 3000:¥1.0109
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      Disponibilidad
      Valores:
      Available
      En orden:
      1988
      Ingrese la cantidad:
      El precio actual de RQ3E100GNTB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,48 US$
      0,48 US$
      10
      0,37 US$
      3,73 US$
      100
      0,20 US$
      20,20 US$
      1000
      0,15 US$
      152,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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