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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SQD50P08-25L_GE3 DISTI # SQD50P08-25L_GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 80V 50A 3-Pin(2+Tab) DPAK (Alt: SQD50P08-25L_GE3) RoHS: Compliant Min Qty: 2000 | Asia - 0 | |
| SQD50P08-25L_GE3 DISTI # SQD50P08-25L_GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 80V 50A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD50P08-25L_GE3) RoHS: Compliant Min Qty: 2000 Container: Reel | Americas - 0 |
|
| SQD50P08-25L-GE3 DISTI # 55X4652 | Vishay Intertechnologies | P-CHANNEL 80-V (D-S) 175C MOSFET | 0 | |
| SQD50P08-25L_GE3 DISTI # 78-SQD50P08-25L_GE3 | Vishay Intertechnologies | MOSFET 80V 50A 136W AEC-Q101 Qualified RoHS: Compliant | 112 |
|
| SQD50P08-25L-GE3 DISTI # 78-SQD50P08-25L-GE3 | Vishay Intertechnologies | MOSFET 80V 50A 136W P-Ch Automotive RoHS: Compliant | 0 | |
| SQD50P08-25L GE3 | Vishay Intertechnologies | P-CHANNEL 80-V (D-S) 175C RoHS: Compliant | Americas - | |
| SQD50P08-25L-GE3 | Vishay Intertechnologies | MOSFET 80V 50A 136W P-Ch Automotive RoHS: Compliant | Americas - |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SQD50P08-25L_GE3 OMO.#: OMO-SQD50P08-25L-GE3-F12 |
MOSFET 80V 50A 136W AEC-Q101 Qualified |
|
|
Mfr.#: SQD50P08-28_GE3 OMO.#: OMO-SQD50P08-28-GE3-992 |
MOSFET P-Channel 80V AEC-Q101 Qualified |
|
Mfr.#: SQD50P08-28-T4_GE3 OMO.#: OMO-SQD50P08-28-T4-GE3 |
MOSFET -80V Vds 20V Vgs TO-252 |
|
|
Mfr.#: SQD50P08-28-GE3 OMO.#: OMO-SQD50P08-28-GE3-C14 |
MOSFET RECOMMENDED ALT 78-SQD50P08-28_GE3 |
|
|
Mfr.#: SQD50P08-25L-GE3 OMO.#: OMO-SQD50P08-25L-GE3-458 |
MOSFET RECOMMENDED ALT 78-SQD50P08-25L_GE3 |
|
Mfr.#: SQD50P08-25L-GE3 OMO.#: OMO-SQD50P08-25L-GE3-317 |
RF Bipolar Transistors MOSFET 80V 50A 136W P-Ch Automotive |
|
Mfr.#: SQD50P08-25L_GE3 OMO.#: OMO-SQD50P08-25L-GE3-VISHAY |
MOSFET P-CHAN 80V TO252 |
|
|
Mfr.#: SQD50P08-25L OMO.#: OMO-SQD50P08-25L-1190 |
Nuevo y original |
|
|
Mfr.#: SQD50P08-28 OMO.#: OMO-SQD50P08-28-1190 |
Nuevo y original |
|
|
Mfr.#: SQD50P0828GE3 OMO.#: OMO-SQD50P0828GE3-1190 |
Power Field-Effect Transistor, 48A I(D), 80V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
