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SIA850DJ-T1-GE3

SIA850DJ-T1-GE3
Mfr. #:
SIA850DJ-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 190V 0.95A SC70-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIA850DJ-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SIA8, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
***i-Key
MOSFET N-CH 190V 0.95A SC70-6
***
N-CH 190V W/190V D10D
***ark
MOSFET,N CH,+ DI,190V,0.95A,SC70PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:190V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.9W; Operating ;RoHS Compliant: Yes
***nell
MOSFET,N CH,+ DI,190V,0.95A,SC70PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:190V; On State Resistance:3ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:16V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; Current Id Max:470mA; Power Dissipation:1.9W
***ment14 APAC
MOSFET,N CH,+ DI,190V,0.95A,SC70PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:190V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:470mA; Power Dissipation Pd:1.9W; Voltage Vgs Max:16V
Parte # Mfg. Descripción Valores Precio
SIA850DJ-T1-GE3
DISTI # SIA850DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 190V 0.95A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIA850DJ-T1-GE3
    DISTI # SIA850DJ-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 190V 0.95A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIA850DJ-T1-GE3
      DISTI # SIA850DJ-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH 190V 0.95A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIA850DJ-T1-GE3
        DISTI # 781-SIA850DJ-GE3        		Vishay IntertechnologiesMOSFET 190V 0.95A 7.0W
        RoHS: Compliant        		0
          Imagen Parte # Descripción
          SIA850DJ-T1-GE3

          Mfr.#: SIA850DJ-T1-GE3

          OMO.#: OMO-SIA850DJ-T1-GE3

          		 MOSFET 190V 0.95A 7.0W
          SIA850DJ-T1-GE3

          Mfr.#: SIA850DJ-T1-GE3

          OMO.#: OMO-SIA850DJ-T1-GE3-VISHAY

          		 MOSFET N-CH 190V 0.95A SC70-6
          Disponibilidad
          Valores:
          Available
          En orden:
          3500
          Ingrese la cantidad:
          El precio actual de SIA850DJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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