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IXYN100N65C3H1

IXYN100N65C3H1
Mfr. #:
IXYN100N65C3H1
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 650V/166A XPT Copacked SOT-227B
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXYN100N65C3H1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN100N65C3H1 DatasheetIXYN100N65C3H1 Datasheet (P4-P6)IXYN100N65C3H1 Datasheet (P7)
ECAD Model:
Más información:
IXYN100N65C3H1 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
SOT-227B-4
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.85 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
166 A
Pd - Disipación de energía:
600 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
IXYN100N65
Embalaje:
Tubo
Corriente continua de colector Ic Max:
166 A
Marca:
IXYS
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
10
Subcategoría:
IGBT
Nombre comercial:
XPT
Unidad de peso:
1.058219 oz
Tags
IXYN10, IXYN1, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IGBT Transistors 650V/166A XPT Copacked SOT-227B
***i-Key
IGBT MOD 650V 166A 600W SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descripción Valores Precio
IXYN100N65C3H1
DISTI # IXYN100N65C3H1-ND		IXYS CorporationIGBT XPT 650V 166A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube		1793In Stock
  • 250:$18.2700
  • 100:$19.9080
  • 30:$21.4200
  • 10:$23.3100
  • 1:$25.2000
IXYN100N65C3H1
DISTI # 747-IXYN100N65C3H1		IXYS CorporationIGBT Transistors 650V/166A XPT Copacked SOT-227B
RoHS: Compliant		420
  • 1:$24.0000
  • 5:$22.8000
  • 10:$22.2000
  • 25:$20.4000
  • 50:$19.9100
  • 100:$18.9600
  • 200:$17.4000
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Disponibilidad
Valores:
400
En orden:
2383
Ingrese la cantidad:
El precio actual de IXYN100N65C3H1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
24,00 US$
24,00 US$
5
22,80 US$
114,00 US$
10
22,20 US$
222,00 US$
25
20,40 US$
510,00 US$
50
19,91 US$
995,50 US$
100
18,96 US$
1 896,00 US$
200
17,40 US$
3 480,00 US$
500
16,56 US$
8 280,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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