IRF9410TRPBF

Mfr. #:: IRF9410TRPBF
Fabricante:: Infineon / IR
Descripción:: MOSFET MOSFT 30V 7A 30mOhm 18nC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRF9410TRPBF Ficha de datos
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HTML Datasheet:: IRF9410TRPBF Datasheet IRF9410TRPBF Datasheet (P4-P6)IRF9410TRPBF Datasheet (P7)
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Más información:: IRF9410TRPBF más información

Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SO-8

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 30 V

Id - Corriente de drenaje continua:: 7 A

Rds On - Resistencia de la fuente de drenaje:: 50 mOhms

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 18 nC

Pd - Disipación de energía:: 2.5 W

Configuración:: Único

Embalaje:: Carrete

Altura:: 1.75 mm

Longitud:: 4.9 mm

Tipo de transistor:: 1 N-Channel

Ancho:: 3.9 mm

Marca:: Infineon / IR

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 4000

Subcategoría:: MOSFET

Parte # Alias:: SP001551686

Unidad de peso:: 0.019048 oz

Tags: IRF9410TRP, IRF9410T, IRF941, IRF94, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9410TRPBF Puntajes y reseñas

U***I

2019-06-25

C***e

Thank you!

2019-01-11

R***e

excelente

2019-05-25

E***v

Thank you, I am very pleased

2019-03-22

IRF9410TRPBF Descripción

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7A;SO-8;PD 2.5W;VGS +/-20V;gFS 14

***ure Electronics: Single N-Channel 30 V 0.03 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC Tube / MOSFET N-CH 30V 7A 8-SOIC

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 30V, 7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 7A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: a; Pin Format: 1 NC; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Pulse Current Idm: 37A; Row Pitch: 6.3mm; SMD Marking: F9410; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V

IRF9410TRPBF Más información

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRF9410TRPBF DISTI # V72:2272_13890171	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R	2712	1000:$0.2306 500:$0.2793 250:$0.2824 100:$0.2854 25:$0.3940 10:$0.3988 1:$0.4597
IRF9410TRPBF DISTI # IRF9410PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 7A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.2720
IRF9410TRPBF DISTI # 30266180	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R	4000	4000:$0.2592
IRF9410TRPBF DISTI # 30559157	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R	2712	1000:$0.2306 500:$0.2793 250:$0.2824 100:$0.2854 37:$0.3940
IRF9410TRPBF DISTI # IRF9410TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF9410TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.1959 8000:$0.1889 16000:$0.1819 24000:$0.1759 40000:$0.1729
IRF9410TRPBF DISTI # SP001551686	Infineon Technologies AG	Trans MOSFET N-CH 30V 7A 8-Pin SOIC T/R (Alt: SP001551686) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.2569 8000:€0.2099 16000:€0.1929 24000:€0.1779 40000:€0.1649
IRF9410TRPBF DISTI # 32AC7477	Infineon Technologies AG	MOSFET, N-CH, 40V, 7A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation , RoHS Compliant: Yes	4104	1:$0.6300 10:$0.5200 25:$0.4600 50:$0.4000 100:$0.3400 250:$0.3170 500:$0.2930 1000:$0.2700
IRF9410TRPBF DISTI # 70017729	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 0.03Ohm,ID 7A,SO-8,PD 2.5W,VGS +/-20V,gFS 14 RoHS: Compliant	0	4000:$0.2900
IRF9410TRPBF DISTI # 942-IRF9410TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 7A 30mOhm 18nC RoHS: Compliant	5159	1:$0.6300 10:$0.5200 100:$0.3400 1000:$0.2700 4000:$0.2300 8000:$0.2200 24000:$0.2100
IRF9410TRPBF DISTI # 1623278	Infineon Technologies AG	MOSFET N-CH 30V 7A HEXFET SOIC8, RL	7880	4000:£0.1740 8000:£0.1670 12000:£0.1620
IRF9410TRPBF DISTI # 2777384	Infineon Technologies AG	MOSFET, N-CH, 40V, 7A, SOIC RoHS: Compliant	4104	5:$0.8550 25:$0.7450 100:$0.6080
IRF9410TRPBF DISTI # 2777384	Infineon Technologies AG	MOSFET, N-CH, 40V, 7A, SOIC RoHS: Compliant	4109	5:£0.4100 25:£0.3360 100:£0.2620 250:£0.2490 500:£0.2360
IRF9410TRPBF DISTI # C1S322000595136	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R RoHS: Compliant	2800	250:$0.2824 100:$0.2854 25:$0.3940 10:$0.3988
IRF9410TRPBF DISTI # C1S322000585759	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.2810

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Disponibilidad

Valores:: Available
En orden:: 1987
Ingrese la cantidad:

El precio actual de IRF9410TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,63 US$~~; ~~0,63 US$~~

10: ~~0,53 US$~~; ~~5,29 US$~~

100: ~~0,34 US$~~; ~~34,10 US$~~

1000: ~~0,27 US$~~; ~~273,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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