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QS6J11TR

QS6J11TR
Mfr. #:
QS6J11TR
Fabricante:
Rohm Semiconductor
Descripción:
IGBT Transistors MOSFET TRANS MOSFET PCH 12V 2A 6PIN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
QS6J11TR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Semiconductor Rohm
categoria de producto
FET: matrices
Serie
QS6J11
embalaje
Embalaje alternativo de Digi-ReelR
Estilo de montaje
SMD / SMT
Paquete-Estuche
SC-74, SOT-457
Tecnología
Si
Temperatura de funcionamiento
150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
TSMT6
Configuración
Doble
Tipo FET
2 P-Channel (Dual)
Potencia máxima
600mW
Tipo transistor
2 P-Channel
Drenaje-a-fuente-voltaje-Vdss
12V
Entrada-Capacitancia-Ciss-Vds
770pF @ 6V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
2A
Rds-On-Max-Id-Vgs
105 mOhm @ 2A, 4.5V
Vgs-th-Max-Id
1V @ 1mA
Puerta-Carga-Qg-Vgs
6.5nC @ 4.5V
Disipación de potencia Pd
600 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
35 ns
Hora de levantarse
17 ns
Vgs-Puerta-Fuente-Voltaje
10 V
Id-corriente-de-drenaje-continua
2 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Resistencia a la fuente de desagüe de Rds
75 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
65 ns
Tiempo de retardo de encendido típico
10 ns
Qg-Gate-Charge
6.5 nC
Transconductancia directa-Mín.
2 S
Modo de canal
Mejora
Tags
QS6J11, QS6J1, QS6J, QS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual P-CH 12V 2A 6-Pin SOT-457T Emboss T/R
*** Source Electronics
Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R / MOSFET 2P-CH 12V 2A TSMT6
***ronik
P+P CHANNEL MOS 2A 12V TSMT6
***Yang
Transistor MOSFET Array Dual P-CH 12V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel
***emi
Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ
***ment14 APAC
MOSFET, PP; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:2.5A; Current Id Max:-2.5A; Drain Source Voltage Vds:-12V; Module Configuration:Dual; On Resistance Rds(on):90mohm; Package / Case:SuperSOT; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
***ical
Trans MOSFET N/P-CH 30V/12V 2.4A/2.5A 6-Pin SuperSOT T/R
***Yang
12V, P-CH MOSFET,30V, SYNCFET, POWER TRENCH, SSOT6 - Bulk
***ser
MOSFETs 12V P-Channel PowerTrench
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ
***eco
Transistor MOSFET P-Channel 20 Volt 3.5A 6-Pin SuperSOT
***ure Electronics
P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6
***rchild Semiconductor
This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
***el Electronic
Chip Resistor - Surface Mount 10kOhms 0402 (1005 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 10K OHM 5% 1/5W 0402
***nell
MOSFET P CH 20V 3.5A SSOT6; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V
***Yang
Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel
***emi
Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.3A; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
***rchild Semiconductor
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
***p One Stop Global
Trans MOSFET P-CH 30V 3.9A Automotive 6-Pin TSOT-26 T/R
***ure Electronics
P-Channel 30 V 105 mOhm Surface Mount Enhancement Mode Mosfet - TSOT-26
***(Formerly Allied Electronics)
30V P-Channel Enhancement MOSFET TSOT-26
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 12±V VGS
***S
French Electronic Distributor since 1988
***ure Electronics
ZXMP6A17E6Q Series 60 V 2.3 A P-Channel Enhancement Mode Mosfet - SOT-23-6
***ical
Trans MOSFET P-CH 60V 2.3A Automotive 6-Pin SOT-26 T/R
***ark
Mosfet Bvdss: 41V~60V Sot26 T&r 3K Rohs Compliant: Yes
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
***nell
MOSFET, AEC-Q101, P CH, -60V, SOT-26; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.3A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.1W; Transistor Case Style: SOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Parte # Mfg. Descripción Valores Precio
QS6J11TR
DISTI # 30719429		ROHM SemiconductorTrans MOSFET P-CH 12V 2A 6-Pin TSMT T/R
RoHS: Compliant		5785
  • 1000:$0.2818
  • 500:$0.3022
  • 100:$0.3672
  • 50:$0.4411
  • 43:$0.6044
QS6J11TR
DISTI # QS6J11CT-ND		ROHM SemiconductorMOSFET 2P-CH 12V 2A TSMT6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8240In Stock
  • 1000:$0.2416
  • 500:$0.3127
  • 100:$0.3980
  • 10:$0.5330
  • 1:$0.6200
QS6J11TR
DISTI # QS6J11DKR-ND		ROHM SemiconductorMOSFET 2P-CH 12V 2A TSMT6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8240In Stock
  • 1000:$0.2416
  • 500:$0.3127
  • 100:$0.3980
  • 10:$0.5330
  • 1:$0.6200
QS6J11TR
DISTI # QS6J11TR-ND		ROHM SemiconductorMOSFET 2P-CH 12V 2A TSMT6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.2139
QS6J11TR
DISTI # QS6J11TR		ROHM SemiconductorTrans MOSFET P-CH 12V 2A 6-Pin TSMT T/R - Tape and Reel (Alt: QS6J11TR)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
    QS6J11TR
    DISTI # QS6J11TR    		ROHM SemiconductorTrans MOSFET P-CH 12V 2A 6-Pin TSMT T/R (Alt: QS6J11TR)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1229
    • 18000:€0.1319
    • 12000:€0.1559
    • 6000:€0.1909
    • 3000:€0.2459
    QS6J11TR
    DISTI # QS6J11TR    		ROHM SemiconductorTrans MOSFET P-CH 12V 2A 6-Pin TSMT T/R (Alt: QS6J11TR)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      QS6J11TR
      DISTI # 755-QS6J11TR      		ROHM SemiconductorMOSFET TRANS MOSFET PCH 12V 2A 6PIN
      RoHS: Compliant      		5780
      • 1:$0.6000
      • 10:$0.4990
      • 100:$0.3040
      • 1000:$0.2350
      • 3000:$0.2300
      QS6J11TR
      DISTI # TMOSS6472      		ROHM SemiconductorP+P CHANNEL MOS 2A 12V TSMT6
      RoHS: Compliant      		Stock DE - 9000Stock HK - 0Stock US - 0
      • 3000:$0.2120
      • 6000:$0.1999
      • 9000:$0.1878
      • 12000:$0.1696
      • 18000:$0.1636
      QS6J11TRROHM Semiconductor 3000
      • 1:¥4.6262
      • 100:¥2.6231
      • 1500:¥1.6630
      • 3000:¥1.2390
      QS6J11TRROHM SemiconductorMOSFET TRANS MOSFET PCH 12V 2A 6PIN
      RoHS: Compliant      		Americas -
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        OMO.#: OMO-QS6J11-TR-1190

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        QS6J3

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        OMO.#: OMO-QS6J3-1190

        		 Nuevo y original
        QS6J3 TR

        Mfr.#: QS6J3 TR

        OMO.#: OMO-QS6J3-TR-1190

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        OMO.#: OMO-QS6J1TR-ROHM-SEMI

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        QS6J3TR

        Mfr.#: QS6J3TR

        OMO.#: OMO-QS6J3TR-ROHM-SEMI

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        QS6J11TR

        Mfr.#: QS6J11TR

        OMO.#: OMO-QS6J11TR-ROHM-SEMI

        		 IGBT Transistors MOSFET TRANS MOSFET PCH 12V 2A 6PIN
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de QS6J11TR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,21 US$
        0,21 US$
        10
        0,20 US$
        1,99 US$
        100
        0,19 US$
        18,85 US$
        500
        0,18 US$
        89,05 US$
        1000
        0,17 US$
        167,60 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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