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SSM2212CPZ-R7

SSM2212CPZ-R7
Mfr. #:
SSM2212CPZ-R7
Fabricante:
Analog Devices Inc.
Descripción:
Bipolar Transistors - BJT Low Noise,Matched Dual NPN Transistor
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SSM2212CPZ-R7 Ficha de datos
Entrega:
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HTML Datasheet:
SSM2212CPZ-R7 DatasheetSSM2212CPZ-R7 Datasheet (P4-P6)SSM2212CPZ-R7 Datasheet (P7-P9)SSM2212CPZ-R7 Datasheet (P10-P12)SSM2212CPZ-R7 Datasheet (P13)
ECAD Model:
Más información:
SSM2212CPZ-R7 más información SSM2212CPZ-R7 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Analog Devices Inc.
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
LFCSP-16
Polaridad del transistor:
NPN
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
40 V
Colector- Voltaje base VCBO:
40 V
Voltaje de saturación colector-emisor:
50 mV
Corriente máxima del colector de CC:
20 mA
Producto de ganancia de ancho de banda fT:
200 MHz
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
SSM2212
Ganancia de corriente CC hFE Max:
2400 at 1 mA, 15 V, 2400 at 1 mA, 15 V
Embalaje:
Carrete
Marca:
Dispositivos analógicos
Colector de CC / Ganancia base hfe Min:
300 at 1 mA, 15 V, 300 at 1 mA, 15 V
Sensible a la humedad:
Yes
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
1500
Subcategoría:
Transistores
Tags
SSM2212C, SSM2212, SSM221, SSM22, SSM2, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP EP T/R
***ark
Low Noise Matched Dual NPN Transistor, REEL7
***et Europe
Trans GP BJT NPN 40V 0.02A 16-Pin LFCSP T/R
***ponent Sense
IC SMD LOW-NOISE FOR AUDIO DUAL MATCHED
***i-Key
TRANS 2NPN 40V 0.02A 16WLCSP
***hardson RFPD
RF POWER TRANSISTOR
***log Devices
The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high- order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications. The SSM2212 SOIC performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C. The SSM2212 is available in 8-lead SOIC and 16-lead LFCSP packages.
SSM2212 Dual-Matched NPN Transistor
Analog Devices SSM2212 features a dual, NPN-matched transistor pair specifically designed to meet the requirements of ultralow noise audio systems. With its extremely low input base spreading resistance (rbb' is typically 28Ω) and high current gain (hFE typically exceeds 600 at IC = 1mA), the SSM2212 can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to approximately 0.5% and low VOS of less than 10μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction. The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications.Learn More
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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de SSM2212CPZ-R7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,73 US$
6,73 US$
10
6,06 US$
60,60 US$
25
5,70 US$
142,50 US$
50
5,36 US$
268,00 US$
100
5,09 US$
509,00 US$
250
4,78 US$
1 195,00 US$
500
4,34 US$
2 170,00 US$
1000
3,72 US$
3 720,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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