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HN1B01FU-GR,LF

HN1B01FU-GR,LF
Mfr. #:
HN1B01FU-GR,LF
Fabricante:
Toshiba
Descripción:
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HN1B01FU-GR,LF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HN1B01FU-GR,LF DatasheetHN1B01FU-GR,LF Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Toshiba
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-363-6
Polaridad del transistor:
NPN, PNP
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
50 V
Colector- Voltaje base VCBO:
60 V, - 50 V
Emisor- Voltaje base VEBO:
5 V
Voltaje de saturación colector-emisor:
100 mV
Corriente máxima del colector de CC:
150 mA
Producto de ganancia de ancho de banda fT:
150 MHz, 120 MHz
Temperatura máxima de funcionamiento:
+ 125 C
Serie:
HN1B01
Ganancia de corriente CC hFE Max:
400
Embalaje:
Carrete
Marca:
Toshiba
Colector de CC / Ganancia base hfe Min:
120
Pd - Disipación de energía:
200 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Unidad de peso:
0.000265 oz
Tags
HN1B01FU-G, HN1B01FU, HN1B01, HN1B0, HN1B, HN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US Embossed T/R
***i-Key
TRANS NPN/PNP 50V 0.15A US6-PLN
Parte # Mfg. Descripción Valores Precio
HN1B01FU-GR,LF
DISTI # HN1B01FU-GRLFCT-ND		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A US6-PLN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    HN1B01FU-GR,LF
    DISTI # HN1B01FU-GRLFDKR-ND    		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A US6-PLN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      HN1B01FU-GR,LF
      DISTI # HN1B01FU-GRLFTR-ND      		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A US6-PLN
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.0604
      HN1B01FU-GR,LF
      DISTI # HN1B01FU-GR,LF      		Toshiba America Electronic ComponentsTrans GP BJT NPN/PNP 50V 0.15A 6-Pin US Embossed T/R - Tape and Reel (Alt: HN1B01FU-GR,LF)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.0321
      • 18000:$0.0329
      • 12000:$0.0348
      • 6000:$0.0369
      • 3000:$0.0392
      HN1B01FU-GR,LF
      DISTI # 757-HN1B01FUGRLF      		Toshiba America Electronic ComponentsBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
      RoHS: Compliant      		3211
      • 1:$0.3600
      • 10:$0.2320
      • 100:$0.0970
      • 1000:$0.0660
      • 3000:$0.0500
      • 9000:$0.0430
      • 24000:$0.0400
      • 45000:$0.0380
      • 99000:$0.0330
      HN1B01FUGRLFT
      DISTI # 757-HN1B01FUGRLFT      		Toshiba America Electronic ComponentsBipolar Transistors - BJT VCEO 50V IC 150mA HFE 120 - 400 150mA
      RoHS: Compliant      		0
        HN1B01FU-GR,LF(BToshiba America Electronic Components 2400
        • 223:$0.1500
        • 26:$0.2250
        • 1:$0.5000
        HN1B01FU-GRLFToshiba America Electronic ComponentsBipolar Transistors - BJTUS6 PLN (LF) TRANSISTOR
        RoHS: Compliant        		Americas -
          HN1B01FU-GR,LFToshiba America Electronic ComponentsBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
          RoHS: Compliant          		Americas -
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            Disponibilidad
            Valores:
            Available
            En orden:
            1986
            Ingrese la cantidad:
            El precio actual de HN1B01FU-GR,LF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            0,36 US$
            0,36 US$
            10
            0,23 US$
            2,32 US$
            100
            0,10 US$
            9,70 US$
            1000
            0,07 US$
            66,00 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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