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SQJQ100E-T1_GE3

SQJQ100E-T1_GE3
Mfr. #:
SQJQ100E-T1_GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 40V Vds 160A Id AEC-Q101 Qualified
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SQJQ100E-T1_GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJQ100E-T1_GE3 DatasheetSQJQ100E-T1_GE3 Datasheet (P4-P6)
ECAD Model:
Más información:
SQJQ100E-T1_GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-8x8L-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
160 A
Rds On - Resistencia de la fuente de drenaje:
900 uOhms
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
220 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
136 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SQ
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
122 S
Otoño:
30 ns
Tipo de producto:
MOSFET
Hora de levantarse:
60 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
24 ns
Tags
SQJQ1, SQJQ, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK
***et Europe
N-Channel MOSFETs in 8 mm x 8 mm PowerPAK, 40 V, 200 A, 1.2 mΩ
***i-Key
MOSFET N-CH 40V 200A POWERPAK8
***ark
MOSFET, AEC-Q101, N-CH, 40V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 40V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:136W; Transistor Case Style:PowerPAK; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, AEC-Q101, CA-N, 40V, POWERPAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:200A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):900µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:PowerPAK; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Parte # Mfg. Descripción Valores Precio
SQJQ100E-T1_GE3
DISTI # V72:2272_17600386		Vishay IntertechnologiesSQJQ100E-T1_GE3**MULT1
9172
3107023		0
    SQJQ100E-T1_GE3
    DISTI # V99:2348_17600386    		Vishay IntertechnologiesSQJQ100E-T1_GE3**MULT1
    9172
    3107023    		0
    • 2000:$1.3190
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3TR-ND    		Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.2285
    • 2000:$1.2757
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3CT-ND    		Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.4114
    • 500:$1.7034
    • 100:$2.0732
    • 10:$2.5790
    • 1:$2.8700
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.4114
    • 500:$1.7034
    • 100:$2.0732
    • 10:$2.5790
    • 1:$2.8700
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3    		Vishay IntertechnologiesN-Channel MOSFETs in 8 mm x 8 mm PowerPAK, 40 V, 200 A, 1.2 mΩ - Tape and Reel (Alt: SQJQ100E-T1_GE3)
    RoHS: Not Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 12000:$1.0900
    • 20000:$1.0900
    • 4000:$1.1900
    • 8000:$1.1900
    • 2000:$1.2900
    SQJQ100E-T1_GE3
    DISTI # 20AC4001    		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) 175C MOSFET0
    • 10000:$1.1300
    • 6000:$1.1700
    • 4000:$1.2200
    • 2000:$1.3500
    • 1000:$1.4300
    • 1:$1.5200
    SQJQ100E-T1_GE3
    DISTI # 78-SQJQ100E-T1_GE3    		Vishay IntertechnologiesMOSFET 40V Vds 160A Id AEC-Q101 Qualified
    RoHS: Compliant    		0
    • 1:$2.7900
    • 10:$2.3200
    • 100:$1.8000
    • 500:$1.5700
    • 1000:$1.3000
    • 2000:$1.2100
    • 4000:$1.1700
    SQJQ100E-T1_GE3
    DISTI # 2708322    		Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 40V, POWERPAK
    RoHS: Compliant    		0
    • 1000:$2.1300
    • 500:$2.5700
    • 100:$3.1300
    • 10:$3.8900
    • 1:$4.3300
    SQJQ100E-T1_GE3
    DISTI # 2708322    		Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 40V, POWERPAK0
    • 500:£1.2700
    • 250:£1.4200
    • 100:£1.4600
    • 10:£1.7700
    • 1:£2.4200
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    Mfr.#: LTC7000EMSE-1#PBF

    OMO.#: OMO-LTC7000EMSE-1-PBF

    		 Gate Drivers Fast 150V Protected High Side NMOS Static Switch Driver
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    Mfr.#: TL431ACDBZR

    OMO.#: OMO-TL431ACDBZR

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    LM5170QPHPTQ1

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    Mfr.#: LTST-C190KRKT

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    		 Standard LEDs - SMD Red Clear 631nm
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    LM5170QPHPTQ1

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    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de SQJQ100E-T1_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,79 US$
    2,79 US$
    10
    2,32 US$
    23,20 US$
    100
    1,80 US$
    180,00 US$
    500
    1,57 US$
    785,00 US$
    1000
    1,30 US$
    1 300,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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