OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

UJ3D1210TS

UJ3D1210TS
Mfr. #:
UJ3D1210TS
Fabricante:
UnitedSiC
Descripción:
Schottky Diodes & Rectifiers 1200V/10A SiC SCHOTTKY DIODE G3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
UJ3D1210TS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
UJ3D1210TS más información
Atributo del producto
Valor de atributo
Fabricante:
UnidosSiC
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-2
Si - Corriente directa:
10 A
Vrrm - Voltaje inverso repetitivo:
1200 V
Vf - Voltaje directo:
1.4 V
Ifsm - Corriente de sobretensión directa:
120 A
Configuración:
Único
Tecnología:
Sic
Ir - Corriente inversa:
100 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
UJ3D
Calificación:
AEC-Q101
Embalaje:
Tubo
Marca:
UnidosSiC
Pd - Disipación de energía:
220.6 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
50
Subcategoría:
Diodes & Rectifiers
Vr - Voltaje inverso:
1200 V
Tags
UJ3D121, UJ3D1, UJ3D, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
UJ3D Series 650V & 1200V SiC Schottky Diodes
UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).  With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 
Imagen Parte # Descripción
LSIC1MO170E1000

Mfr.#: LSIC1MO170E1000

OMO.#: OMO-LSIC1MO170E1000

 MOSFET 1700V 1000mOhm SiC MOSFET
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160

 MOSFET 1200 V 160 mOhm SiC Mosfet
LSIC1MO120E0120

Mfr.#: LSIC1MO120E0120

OMO.#: OMO-LSIC1MO120E0120

 MOSFET 1200 V 120 mOhm SiC Mosfet
STPSC10H12D

Mfr.#: STPSC10H12D

OMO.#: OMO-STPSC10H12D

 Schottky Diodes & Rectifiers 1200V Power Schottky Silicon Carbide diode
MSC010SDA120K

Mfr.#: MSC010SDA120K

OMO.#: OMO-MSC010SDA120K

 Schottky Diodes & Rectifiers 1200 V, 10 A SiC SBD
C2M1000170J

Mfr.#: C2M1000170J

OMO.#: OMO-C2M1000170J

 MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
LSIC1MO120E0080

Mfr.#: LSIC1MO120E0080

OMO.#: OMO-LSIC1MO120E0080

 MOSFET 1200V 80mOhm SiC MOSFET
LSIC1MO120E0120

Mfr.#: LSIC1MO120E0120

OMO.#: OMO-LSIC1MO120E0120-LITTELFUSE

 1200V/120mohm SiC MOSFET TO-247-3L
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

 1200V/160mohm SiC MOSFET TO-247-3L
LSIC1MO170E1000

Mfr.#: LSIC1MO170E1000

OMO.#: OMO-LSIC1MO170E1000-LITTELFUSE

 1700V/1000mohm SiC MOSFET TO-247-3L
Disponibilidad
Valores:
32
En orden:
2015
Ingrese la cantidad:
El precio actual de UJ3D1210TS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,71 US$
10,71 US$
10
10,13 US$
101,30 US$
25
9,23 US$
230,75 US$
50
8,60 US$
430,00 US$
100
8,33 US$
833,00 US$
250
7,66 US$
1 915,00 US$
500
6,98 US$
3 490,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top