IS61WV51216EDALL-20BLI-TR

IS61WV51216EDALL-20BLI-TR
Mfr. #:
IS61WV51216EDALL-20BLI-TR
Fabricante:
ISSI
Descripción:
SRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IS61WV51216EDALL-20BLI-TR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
ISSI
Categoria de producto:
SRAM
Tamaño de la memoria:
8 Mbit
Organización:
512 k x 16
Tiempo de acceso:
20 ns
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
2.2 V
Voltaje de suministro - Min:
1.65 V
Corriente de suministro - Máx .:
40 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TFBGA-48
Embalaje:
Carrete
Tipo de memoria:
SRAM
Serie:
IS61WV51216EDALL
Escribe:
Alta velocidad
Marca:
ISSI
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
2500
Subcategoría:
Memoria y almacenamiento de datos
Tags
IS61WV51216EDA, IS61WV51216ED, IS61WV51216E, IS61WV5121, IS61WV5, IS61W, IS61, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
High-Speed Asynchronous CMOS Static RAM with ECC 8Mb 512Kx16 1.8V 20ns 48-Pin mini-BGA T/R
***ark
8Mb,High-Speed/Low Power,Async With Ecc,512K X 16, 20Ns,1.65V-2.2V, 48 Ball Mbga (6X8 Mm), Rohs
***i-Key
IC SRAM 8M PARALLEL 48MGA
Imagen Parte # Descripción
IS61WV51216EEBLL-10TLI-TR

Mfr.#: IS61WV51216EEBLL-10TLI-TR

OMO.#: OMO-IS61WV51216EEBLL-10TLI-TR

SRAM 8M 8,10ns 2.4-3.6V 512Kx16 LP Asyn SRAM
IS61WV51216EDBLL-10TLI

Mfr.#: IS61WV51216EDBLL-10TLI

OMO.#: OMO-IS61WV51216EDBLL-10TLI

SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EDALL-20BLI

Mfr.#: IS61WV51216EDALL-20BLI

OMO.#: OMO-IS61WV51216EDALL-20BLI

SRAM 8M (512Kx16) 20ns Async SRAM 1.65-2.2V
IS61WV51216EDBLL-10BLI-TR

Mfr.#: IS61WV51216EDBLL-10BLI-TR

OMO.#: OMO-IS61WV51216EDBLL-10BLI-TR

SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EEALL-20BLI

Mfr.#: IS61WV51216EEALL-20BLI

OMO.#: OMO-IS61WV51216EEALL-20BLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS
IS61WV51216EEBLL-10TLI

Mfr.#: IS61WV51216EEBLL-10TLI

OMO.#: OMO-IS61WV51216EEBLL-10TLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
IS61WV51216EDBLL-10TLI-TR

Mfr.#: IS61WV51216EDBLL-10TLI-TR

OMO.#: OMO-IS61WV51216EDBLL-10TLI-TR

SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM
IS61WV51216EEALL-20TLI

Mfr.#: IS61WV51216EEALL-20TLI

OMO.#: OMO-IS61WV51216EEALL-20TLI

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
IS61WV51216EEALL-20TLI-TR

Mfr.#: IS61WV51216EEALL-20TLI-TR

OMO.#: OMO-IS61WV51216EEALL-20TLI-TR

SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
IS61WV51216EEBLL-10TLI

Mfr.#: IS61WV51216EEBLL-10TLI

OMO.#: OMO-IS61WV51216EEBLL-10TLI-INTEGRATED-SILICON-SOLUTION

IC SRAM 8M PARALLEL 44TSOP II
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de IS61WV51216EDALL-20BLI-TR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Top