SIA432DJ-T1-GE3

Name: Vishay - SIA432DJ-T1-GE3
Brand: Vishay
SKU: OMO-3513941
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIA432DJ-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET N-CH 30V 12A SC70-6
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIA432DJ-T1-GE3 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SIA432DJ-GE3

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR SC-70-6

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PowerPAKR SC-70-6 Single

Configuración: Drenaje cuádruple simple de doble fuente

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 19.2W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 30V

Entrada-Capacitancia-Ciss-Vds: 800pF @ 15V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 12A (Tc)

Rds-On-Max-Id-Vgs: 20 mOhm @ 6A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Puerta-Carga-Qg-Vgs: 20nC @ 10V

Disipación de potencia Pd: 3.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 10 ns

Hora de levantarse: 11 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 10.1 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Resistencia a la fuente de desagüe de Rds: 20 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 15 ns

Tiempo de retardo de encendido típico: 15 ns

Modo de canal: Mejora

Tags: SIA432, SIA43, SIA4, SIA

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA432DJ-T1-GE3 Descripción

***et: Transistor MOSFET N-CH 30V 10.1A 6-Pin SC-70

***ark: N Channel Mosfet, 30V, 10.1A, Sc-70, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0158Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V Rohs Compliant: No

***nell: MOSFET, N CH, 30V, 12A, POWERPAK SC70; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0158ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIA432DJ-T1-GE3 DISTI # V72:2272_09216836	Vishay Intertechnologies	Trans MOSFET N-CH 30V 10.1A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	3170	3000:$0.4573 1000:$0.4677 500:$0.5063 250:$0.5568 100:$0.6187 25:$0.7422 10:$0.7590 1:$0.8756
SIA432DJ-T1-GE3 DISTI # V36:1790_09216836	Vishay Intertechnologies	Trans MOSFET N-CH 30V 10.1A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	3000	3000:$0.4853
SIA432DJ-T1-GE3 DISTI # SIA432DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6035In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SIA432DJ-T1-GE3 DISTI # SIA432DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6035In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SIA432DJ-T1-GE3 DISTI # SIA432DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.4928
SIA432DJ-T1-GE3 DISTI # 25790305	Vishay Intertechnologies	Trans MOSFET N-CH 30V 10.1A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	3170	3000:$0.4573 1000:$0.4677 500:$0.5063 250:$0.5568 100:$0.6187 25:$0.7422 15:$0.7590
SIA432DJ-T1-GE3 DISTI # 27521159	Vishay Intertechnologies	Trans MOSFET N-CH 30V 10.1A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	3000	3000:$0.4853
SIA432DJ-T1-GE3 DISTI # SIA432DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 10.1A 6-Pin PowerPAK SC-70 T/R - Cut TR (SOS) (Alt: SIA432DJ-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 909	1:$0.7659 30:$0.7099 75:$0.6359 150:$0.5939 375:$0.5179 750:$0.4939 1500:$0.4929
SIA432DJ-T1-GE3 DISTI # SIA432DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 10.1A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA432DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4739 6000:$0.4729 12000:$0.4719 18000:$0.4709 30000:$0.4689
SIA432DJ-T1-GE3 DISTI # 85W8930	Vishay Intertechnologies	Trans MOSFET N-CH 30V 10.1A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 85W8930) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.5350
SIA432DJ-T1-GE3 DISTI # 16P3619	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 10.1A, SC-70, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:10.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0158ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$0.5340 3000:$0.5340
SIA432DJ-T1-GE3 DISTI # 85W8930	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 10.1A, SC-70,Transistor Polarity:N Channel,Continuous Drain Current Id:10.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0158ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	110	1:$0.1540 25:$0.1540 50:$0.1540 100:$0.1540 250:$0.1540 500:$0.1540 1000:$0.1540
SIA432DJ-T1-GE3. DISTI # 30AC0110	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.5340 3000:$0.5340
SIA432DJ-T1-GE3 DISTI # 781-SIA432DJ-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	2949	1:$1.1200 10:$0.9220 100:$0.7080 500:$0.6090 1000:$0.5760 3000:$0.5340
SIA432DJT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SIA432DJ-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	Americas -	3000:$0.4460 6000:$0.4210 12000:$0.4090 24000:$0.4020
SIA432DJ-T1-GE3 DISTI # 2335388	Vishay Intertechnologies	MOSFET, N CH, 30V, 12A, POWERPAK SC70 RoHS: Compliant	360	5:£0.7780 25:£0.6980 100:£0.5360 250:£0.4990 500:£0.4610
SIA432DJ-T1-GE3 DISTI # C1S803601962063	Vishay Intertechnologies	MOSFETs	3170	250:$0.6081 100:$0.6185 25:$0.7328 10:$0.7588
SIA432DJ-T1-GE3 DISTI # C1S806001173521	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3000:$0.4844
SIA432DJ-T1-GE3 DISTI # 2335388	Vishay Intertechnologies	MOSFET, N CH, 30V, 12A, POWERPAK SC70 RoHS: Compliant	360	1:$1.7800 10:$1.4600 100:$1.1300 500:$0.9640 1000:$0.8470 3000:$0.8460
SIA432DJ-T1-GE3 DISTI # 2478927	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 10.1A, SC-70, FULL REEL RoHS: Compliant	0	3000:$1.7600 6000:$1.3500 12000:$1.0900

Productos relacionados

Imagen

Parte #

Descripción

Mfr.#: SIA432DJ-T1-GE3

OMO.#: OMO-SIA432DJ-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAK SC-70

Mfr.#: SIA432DJ-T1-GE3

OMO.#: OMO-SIA432DJ-T1-GE3-VISHAY

MOSFET N-CH 30V 12A SC70-6

Mfr.#: SIA432DJ-TI-GE3

OMO.#: OMO-SIA432DJ-TI-GE3-1190

Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 1500
Ingrese la cantidad:

El precio actual de SIA432DJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,23 US$~~; ~~0,23 US$~~

10: ~~0,22 US$~~; ~~2,20 US$~~

100: ~~0,21 US$~~; ~~20,79 US$~~

500: ~~0,20 US$~~; ~~98,20 US$~~

1000: ~~0,18 US$~~; ~~184,80 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SIA432 4
SIA43 28
SIA4 136
SIA 347

SIA432DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes