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F3L200R12W2H3B11BPSA1

F3L200R12W2H3B11BPSA1
Mfr. #:
F3L200R12W2H3B11BPSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT MODULE VCES 650V 200A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
F3L200R12W2H3B11BPSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
F3L200R12W, F3L200R1, F3L20, F3L2, F3L
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
EasyPACK Module with active Neutral Point Clamp 2" topology and PressFIT/NTC"
***ical
Trans IGBT Module N-CH 1200V 100A 600000mW 14-Pin EASY2B-2 Tray
***ronik
3-LEVEL 1200V 100A EasyPACK
***i-Key
IGBT MODULE VCES 650V 200A
***ark
Igbt, Module, N-Ch, 1.2Kv, 100A; Transistor Polarity:n Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:600W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:- Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 100A; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EasyPACK 2B Series; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 1.2KV, 100A; Polarità Transistor:Canale N; Corrente di Collettore CC:100A; Tensione Saturaz Collettore-Emettitore Vce(on):1.55V; Dissipazione di Potenza Pd:600W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EasyPACK 2B Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EasyPACK 2B 1200V 3-level phase leg IGBT module with High Speed IGBT H3, NTC, active "Neutral Point Clamp 2" and PressFIT Contact Technology | Summary of Features: Low inductive design; Low Switching Losses; Low V CEsat; Al 2O 3 Substrate with Low Thermal Resistance; Compact design; PressFIT Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups
Parte # Mfg. Descripción Valores Precio
F3L200R12W2H3B11BPSA1
DISTI # V99:2348_18206155		Infineon Technologies AGTrench and Field Stop IGBT4un5
  • 100:$86.5400
  • 25:$87.4300
  • 10:$88.3199
  • 1:$89.2000
F3L200R12W2H3B11BPSA1
DISTI # F3L200R12W2H3B11BPSA1-ND		Infineon Technologies AGIGBT MODULE VCES 650V 200A
RoHS: Not compliant
Min Qty: 15
Container: Bulk		Temporarily Out of Stock
  • 15:$87.6000
F3L200R12W2H3B11BPSA1
DISTI # 26904153		Infineon Technologies AGTrench and Field Stop IGBT4un5
  • 1:$89.2000
F3L200R12W2H3B11BPSA1
DISTI # F3L200R12W2H3B11BPSA1		Infineon Technologies AGEasyPACK Module with active "Neutral Point Clamp 2" topology and PressFIT/NTC - Bulk (Alt: F3L200R12W2H3B11BPSA1)
RoHS: Compliant
Min Qty: 5
Container: Bulk		Americas - 0
  • 50:$70.5900
  • 25:$71.8900
  • 15:$74.3900
  • 10:$77.1900
  • 5:$80.0900
F3L200R12W2H3B11BPSA1
DISTI # F3L200R12W2H3B11BPSA1		Infineon Technologies AGEasyPACK Module with active "Neutral Point Clamp 2" topology and PressFIT/NTC - Trays (Alt: F3L200R12W2H3B11BPSA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
    F3L200R12W2H3B11BPSA1
    DISTI # SP001197126    		Infineon Technologies AGEasyPACK Module with active "Neutral Point Clamp 2" topology and PressFIT/NTC (Alt: SP001197126)
    RoHS: Compliant
    Min Qty: 1
    Container: Package    		Europe - 0
    • 1000:€71.2900
    • 500:€72.2900
    • 100:€73.0900
    • 50:€74.3900
    • 25:€78.3900
    • 10:€79.1900
    • 1:€81.5900
    F3L200R12W2H3B11BPSA1
    DISTI # 13AC8777    		Infineon Technologies AGEasyPACK Module with active "Neutral Point Clamp 2" topology and PressFIT/NTC - Bulk (Alt: 13AC8777)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
      F3L200R12W2H3B11BPSA1
      DISTI # 13AC8777      		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 100A,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:600W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:- RoHS Compliant: Yes15
      • 1:$90.2500
      F3L200R12W2H3_B11
      DISTI # 641-F3L200R12W2H3_B1      		Infineon Technologies AGIGBT Modules
      RoHS: Compliant      		5
      • 1:$95.3500
      • 5:$93.6000
      • 10:$89.3900
      • 25:$86.4100
      F3L200R12W2H3B11BPSA1Infineon Technologies AGInfineon IGBT ModuleF3L200R12W2H3_B11 - EASY2B-2-1
      RoHS: Not Compliant      		30
      • 1000:$73.1800
      • 500:$77.0400
      • 100:$80.2000
      • 25:$83.6400
      • 1:$90.0700
      F3L200R12W2H3B11BPSA1
      DISTI # 2726108      		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 100A
      RoHS: Compliant      		0
      • 5:$128.2100
      • 2:$132.7900
      • 1:$137.7100
      F3L200R12W2H3B11BPSA1
      DISTI # 2726108      		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 100A0
      • 50:£66.1800
      • 10:£67.5800
      • 5:£68.9900
      • 1:£70.4000
      Imagen Parte # Descripción
      F3L200R12W2H3_B11

      Mfr.#: F3L200R12W2H3_B11

      OMO.#: OMO-F3L200R12W2H3-B11

      		 IGBT Modules
      F3L200R12W2H3B11BP

      Mfr.#: F3L200R12W2H3B11BP

      OMO.#: OMO-F3L200R12W2H3B11BP-1190

      		 Nuevo y original
      F3L200R12W2H3B11BPSA1

      Mfr.#: F3L200R12W2H3B11BPSA1

      OMO.#: OMO-F3L200R12W2H3B11BPSA1-INFINEON-TECHNOLOGIES

      		 IGBT MODULE VCES 650V 200A
      F3L200R12W2H3_B11

      Mfr.#: F3L200R12W2H3_B11

      OMO.#: OMO-F3L200R12W2H3-B11-1190

      		 IGBT Modules
      F3L200R12W2H3_B11 , 1KSM

      Mfr.#: F3L200R12W2H3_B11 , 1KSM

      OMO.#: OMO-F3L200R12W2H3-B11-1KSM-1190

      		 Nuevo y original
      F3L200R12W2H3PB11BPSA1

      Mfr.#: F3L200R12W2H3PB11BPSA1

      OMO.#: OMO-F3L200R12W2H3PB11BPSA1-INFINEON-TECHNOLOGIES

      		 MODULE IGBT 1200V EASY2B-2
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de F3L200R12W2H3B11BPSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      105,88 US$
      105,88 US$
      10
      100,59 US$
      1 005,91 US$
      100
      95,30 US$
      9 529,65 US$
      500
      90,00 US$
      45 001,15 US$
      1000
      84,71 US$
      84 708,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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